Optoelectronic Properties and Photodetection of Two-dimensional Black Phosphorus

LI Lijia; CONG Chunxiao

doi:10.37188/CJL.20230015

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Optoelectronic Properties and Photodetection of Two-dimensional Black Phosphorus

Device Fabrication and Physics | 更新时间：2023-10-27

- Optoelectronic Properties and Photodetection of Two-dimensional Black Phosphorus
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 6, Pages: 995-1005(2023)
- 作者机构：
  
  复旦大学信息科学与工程学院，上海　200433
- 作者简介：
- 基金信息：
  
  Shanghai Municipal Natural Science Foundation(20ZR1403200);National Key R&D Program of China(2018YFA0703700);National Natural Science Foundation of China(61774040;61774042);National Young 1000 Talent Plan of China
- DOI：10.37188/CJL.20230015
  CLC： O482.31;TN214
- Published：05 June 2023，
  
  Received：30 January 2023，
  
  Revised：16 February 2023，
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李黎嘉,丛春晓.二维黑磷的光电特性及光电器件研究进展[J].发光学报,2023,44(06):995-1005.

LI Lijia,CONG Chunxiao.Optoelectronic Properties and Photodetection of Two-dimensional Black Phosphorus[J].Chinese Journal of Luminescence,2023,44(06):995-1005.
李黎嘉,丛春晓.二维黑磷的光电特性及光电器件研究进展[J].发光学报,2023,44(06):995-1005. DOI： 10.37188/CJL.20230015.

LI Lijia,CONG Chunxiao.Optoelectronic Properties and Photodetection of Two-dimensional Black Phosphorus[J].Chinese Journal of Luminescence,2023,44(06):995-1005. DOI： 10.37188/CJL.20230015.

摘要

中波长红外（Mid⁃wavelength infrared，MWIR）光电器件可用于热成像、光通信和气体传感等多个领域。二维黑磷（Black phosphorus，BP）在中波长红外范围显示出独特的优点，其所有厚度下都具有直接带隙和高迁移率的特点使其在中红外光电器件应用方面具有很大的潜力。由于皱褶的晶格结构，黑磷有较强的面内各向异性，可应用于线偏振光电器件。此外，黑磷通过掺杂、应力调控和异质堆叠等多种方式可以实现室温下中红外波段范围内的各种功能性光电器件。本文综述了黑磷的晶体和能带结构及其各向异性的光学性质，并结合近年来在偏振方向敏感的光电探测器和光谱可调控等功能性光电器件方面的应用研究进展，总结了该材料在实际应用中的主要优势和面临的重要问题。最后对二维黑磷在中红外光电器件应用领域的发展趋势进行了展望。

Abstract

Mid-wavelength infrared （MWIR） optoelectronic devices can be used for various applications， including thermal imaging， optical communications， and gas sensing. Owing to the direct bandgap at all thicknesses and high carrier mobility， two-dimensional black phosphorus （BP） is promising for room-temperature mid-wavelength infrared optoelectronic applications. The intrinsic crystal anisotropy of such two-dimensional material also offers an exciting opportunity for the application in linear-polarization-sensitive photodetection. Furthermore， the electronic and optical properties of black phosphorus can be effectively modulated by doping， strain and fabrication of Van der Waals heterostructures， which is advantageous to meet the numerous demands for functional optoelectronic applications. Here we review the essential properties of two-dimensional black phosphorus and discuss the potential applications of black phosphorus in functional mid-wavelength infrared optoelectronic devices. Finally， some of the challenges and future outlooks of BP-based applications in mid-infrared optoelectronic devices are discussed and sug⁃ gested.

关键词

黑磷二维材料中波长红外光电器件

Keywords

black phosphorustwo-dimensional materialsmid-wavelength infraredoptoelectronic devices

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