Comprehensive Investigation of Pt/β-Ga<sub>2</sub>O<sub>3</sub> Deep-UV Schottky Photodiode Highlighting Effective Carriers Injection and Self-powered Operation

HU Ji; LIU Zeng; TANG Weihua

doi:10.37188/CJL.20220420

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Comprehensive Investigation of Pt/β-Ga₂O₃ Deep-UV Schottky Photodiode Highlighting Effective Carriers Injection and Self-powered Operation

Device Fabrication and Physics | 更新时间：2023-06-15

- Comprehensive Investigation of Pt/β-Ga₂O₃ Deep-UV Schottky Photodiode Highlighting Effective Carriers Injection and Self-powered Operation
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 5, Pages: 881-888(2023)
- 作者机构：
  
  1.南京邮电大学集成电路科学与工程学院，氧化镓半导体创新中心，江苏南京　210023
  2.南京邮电大学射频集成与微组装技术国家地方联合工程实验室，江苏南京　210023
- 作者简介：
- 基金信息：
  
  Young Scientists Fund of the National Natural Science Foundation of China(62204125);the National Key R&D Program of China(2022YFB3605404);the Natural Science Research Startup Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(XK1060921115;XK1060921002)
- DOI：10.37188/CJL.20220420
  CLC： O484.4;TN312
- Published：05 May 2023，
  
  Received：19 December 2022，
  
  Revised：03 January 2023，
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胡继,刘增,唐为华.Pt/β⁃Ga₂O₃深紫外肖特基光电二极管的界面载流子注入和自驱动特性[J].发光学报,2023,44(05):881-888.

HU Ji,LIU Zeng,TANG Weihua.Comprehensive Investigation of Pt/β-Ga₂O₃ Deep-UV Schottky Photodiode Highlighting Effective Carriers Injection and Self-powered Operation[J].Chinese Journal of Luminescence,2023,44(05):881-888.
胡继,刘增,唐为华.Pt/β⁃Ga₂O₃深紫外肖特基光电二极管的界面载流子注入和自驱动特性[J].发光学报,2023,44(05):881-888. DOI： 10.37188/CJL.20220420.

HU Ji,LIU Zeng,TANG Weihua.Comprehensive Investigation of Pt/β-Ga₂O₃ Deep-UV Schottky Photodiode Highlighting Effective Carriers Injection and Self-powered Operation[J].Chinese Journal of Luminescence,2023,44(05):881-888. DOI： 10.37188/CJL.20220420.

摘要

采用金属有机化学气相沉积技术在

面蓝宝石衬底上生长氧化镓薄膜，再通过光刻、剥离、电子束蒸镀技术在氧化镓薄膜的表面制作非对称叉指电极，其中Pt/Au作为肖特基电极，Ti/Al/Ni/Au作为欧姆电极；为实现良好的欧姆接触，提升界面载流子的注入效率，对沉积Ti/Al/Ni/Au后的样品进行退火处理。相关结果表明，该Pt/β⁃Ga

肖特基光电二极管具有良好的深紫外探测水平。在-5 V偏压下，响应度和外量子效率分别为3.4 A/W和1.66×10

%。探测器的探测度高达10

Jones，表明其具有优异的弱信号探测能力。同时，响应度和外量子效率整体都随着光强增大而减小，这是由于较高的光生载流子浓度提高了电子⁃空穴对的复合机率。在自驱动模式下，该Pt/β⁃Ga

肖特基光电二极管展现出较快的响应速度，响应度为2.69 mA/W。此外，探测器在-100 V和+100 V的高压下仍然能够稳定运行，说明该探测器具有较好的耐高压稳定性。

Abstract

In this paper， Ga

thin film was grown on

-plane sapphire substrate by metalorganic chemical vapor deposition （MOCVD）， and then asymmetric electrodes were fabricated on the surface of Ga

thin film by photolithography， lift-off， and electron beam evaporation. Pt/Au was used as the Schottky electrode， and Ti/Al/Ni/Au was used as the Ohmic electrode. In order to achieve good Ohmic contact and improve the injection efficiency of interface carriers， the corresponding annealing treatment is carried out. The relevant results show that the Pt/β-Ga

Schottky photodiode has a good level of deep ultraviolet detection. At -5 V bias， the responsivity and external quantum efficiency was 3.4 A/W and 1.66×10

%， respectively. The detectivity was up to 10

Jones， indicating that it has excellent weak signal detection capability. At the same time， the responsivity and external quantum efficiency decrease with the increase of light intensity， which is due to the higher concentration of photogenerated carriers which improves the recombination probability of electron-hole pairs. In self-powered mode， the Pt/β-Ga

Schottky photodiode exhibited a fast responsivity of 2.69 mA/W. In addition， the detector can still operate stably under high voltage of -100 V and +100 V， indicating that the detector has good stability against high voltage operation.

关键词

氧化镓肖特基光电二极管紫外探测自驱动

Keywords

Ga2O3Schottky photodiodeUV detectionself-driven

references

CHEN H Y， LIU K W， HU L F， et al. New concept ultraviolet photodetectors ［J］. Mater. Today， 2015， 18（9）： 493-502. doi: 10.1016/j.mattod.2015.06.001http://dx.doi.org/10.1016/j.mattod.2015.06.001

SANG L W， LIAO M Y， SUMIYA M. A comprehensive review of semiconductor ultraviolet photodetectors： from thin film to one-dimensional nanostructures ［J］. Sensors， 2013， 13（8）： 10482-10518. doi: 10.3390/s130810482http://dx.doi.org/10.3390/s130810482

RAZEGHI M. Short-wavelength solar-blind detectors-status， prospects， and markets ［J］. Proc. IEEE， 2002， 90（6）： 1006-1014. doi: 10.1109/jproc.2002.1021565http://dx.doi.org/10.1109/jproc.2002.1021565

CHEN X H， REN F F， GU S L， et al. Review of gallium-oxide-based solar-blind ultraviolet photodetectors ［J］. Photonics Res.， 2019， 7（4）： 381-415. doi: 10.1364/prj.7.000381http://dx.doi.org/10.1364/prj.7.000381

XU J J， ZHENG W， HUANG F. Gallium oxide solar-blind ultraviolet photodetectors： a review ［J］. J. Mater. Chem. C， 2019， 7（29）： 8753-8770. doi: 10.1039/c9tc02055ahttp://dx.doi.org/10.1039/c9tc02055a

徐士杰. 宽禁带半导体微结构与光电器件光学表征［M］. 西安：西安电子科技大学出版社， 2022.

XU S J. Optical Characterization of Microstructures and Optoelectronic Devices Based on Wide Bandgap Semiconductors ［M］. Xi’an： Xidian University Press， 2022. （in Chinese）

乔宝石. 氧化镓基光电器件的制备及内部机制研究［D］. 长春：中国科学院长春光学精密机械与物理研究所， 2021.

QIAO B S. The Fabrication and Internal Mechanism of Photodetector Based on Ga2O3 ［D］. Changchun： Changchun Institute of Optics， Fine Mechanics and Physics Chinese Academy of Sciences， 2021. （in Chinese）.

LIU Z， DU L， ZHANG S H， et al. Synergetic effect of photoconductive gain and persistent photocurrent in a high-photoresponse Ga2O3 deep-ultraviolet photodetector ［J］. IEEE Trans. Electron Devices， 2022， 69（10）： 5595-5602. doi: 10.1109/ted.2022.3195473http://dx.doi.org/10.1109/ted.2022.3195473

QI X H， YUE J Y， JI X Q， et al. A deep-ultraviolet photodetector of a β-Ga2O3/CuBiI4 heterojunction highlighting ultra-high sensitivity and responsivity ［J］. Thin Solid Films， 2022， 757： 139397. doi: 10.1016/j.tsf.2022.139397http://dx.doi.org/10.1016/j.tsf.2022.139397

LIU Z， ZHANG M L， YANG L L， et al. Enhancement-mode normally-off β-Ga2O3：Si metal-semiconductor field-effect deep-ultraviolet phototransistor ［J］. Semicond. Sci. Technol.， 2022， 37（1）： 015001-1-7. doi: 10.1088/1361-6641/ac38bdhttp://dx.doi.org/10.1088/1361-6641/ac38bd

HAN Z Y， LIANG H L， HUO W X， et al. Boosted UV photodetection performance in chemically etched amorphous Ga2O3 thin-film transistors ［J］. Adv. Opt. Mater.， 2020， 8（8）： 1901833-1-8. doi: 10.1002/adom.201901833http://dx.doi.org/10.1002/adom.201901833

CHU X L， LIU Z， ZHI Y S， et al. Self-powered solar-blind photodiodes based on EFG-grown （100）-dominant β-Ga2O3 substrate ［J］. Chin. Phys. B， 2021， 30（1）： 017302. doi: 10.1088/1674-1056/abc546http://dx.doi.org/10.1088/1674-1056/abc546

SUZUKI R， NAKAGOMI S， KOKUBUN Y， et al. Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing ［J］. Appl. Phys. Lett.， 2009， 94（22）： 222102-1-3. doi: 10.1063/1.3147197http://dx.doi.org/10.1063/1.3147197

LIU X Z， YUE C， XIA C T， et al. Characterization of vertical Au/β-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer ［J］. Chin. Phys. B， 2016， 25（1）： 017201-1-5. doi: 10.1088/1674-1056/25/1/017201http://dx.doi.org/10.1088/1674-1056/25/1/017201

CHEN X， LIU K W， ZHANG Z Z， et al. Self-Powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction ［J］. ACS Appl. Mater. Interfaces， 2016， 8（6）： 4185-4191. doi: 10.1021/acsami.5b11956http://dx.doi.org/10.1021/acsami.5b11956

LIU Z， WANG X， LIU Y Y， et al. A high-performance ultraviolet solar-blind photodetector based on a β-Ga2O3 Schottky photodiode ［J］. J. Mater. Chem. C， 2019， 7（44）： 13920-13929. doi: 10.1039/c9tc04912fhttp://dx.doi.org/10.1039/c9tc04912f

XU Y， CHEN X H， ZHANG Y F， et al. Fast speed Ga2O3 solar-blind Schottky photodiodes with large sensitive area ［J］. IEEE Electron Device Lett.， 2020， 41（7）： 997-1000.

LI Z， CHENG Y N， XU Y， et al. High-performance β-Ga2O3 solar-blind Schottky barrier photodiode with record detectivity and ultrahigh gain via carrier multiplication process ［J］. IEEE Electron Device Lett.， 2020， 41（12）： 1794-1797. doi: 10.1109/led.2020.3032290http://dx.doi.org/10.1109/led.2020.3032290

JI X Q， YIN X M， YUAN Y Z， et al. Amorphous Ga2O3 Schottky photodiodes with high-responsivity and photo-to-dark current ratio ［J］. J. Alloys Compd.， 2023， 933： 167735. doi: 10.1016/j.jallcom.2022.167735http://dx.doi.org/10.1016/j.jallcom.2022.167735

刘增. 氧化镓薄膜基日盲光二极管与光晶体管的制备与性能研究［D］. 北京：北京邮电大学， 2021.

LIU Z. Fabrication and Characterization of Ga2O3 Film⁃based Solar⁃blind Photodiodes and Phototransistors ［D］. Beijing： Beijing University of Posts and Telecommunications， 2021. （in Chinese）

SHEORAN H， KUMAR V， SINGH R. A comprehensive review on recent developments in Ohmic and Schottky contacts on Ga2O3 for device applications ［J］. ACS Appl. Electron. Mater.， 2022， 4（6）： 2589-2628. doi: 10.1021/acsaelm.2c00101http://dx.doi.org/10.1021/acsaelm.2c00101

LU C， JI X Q， LIU Z， et al. A review of metal⁃semiconductor contacts for β-Ga2O3 ［J］. J. Phys. D： Appl. Phys.， 2022， 55（46）： 463002. doi: 10.1088/1361-6463/ac8818http://dx.doi.org/10.1088/1361-6463/ac8818

CHEN J X， LI X X， MA H P， et al. Investigation of the mechanism for Ohmic contact formation in Ti/Al/Ni/Au contacts to β-Ga2O3 nanobelt field-effect transistors ［J］. ACS Appl. Mater. Interfaces， 2019， 11（35）： 32127-32134. doi: 10.1021/acsami.9b09166http://dx.doi.org/10.1021/acsami.9b09166

刘恩科，朱秉升，罗晋生. 半导体物理学［M］. 第7版. 北京：电子工业出版社， 2011.

LIU E K， ZHU B S， LUO J S. The Physics of Semiconductors ［M］. 7th ed. Beijing： Publishing House of Electronics Industry， 2011. （in Chinese）

O'ROURKE R C. Absorption of light by trapped electrons ［J］. Phys. Rev.， 1953， 91（2）： 265-270. doi: 10.1103/physrev.91.265http://dx.doi.org/10.1103/physrev.91.265

赖黎，莫慧兰，符思婕，等. 氧化镓微晶薄膜制备及其日盲深紫外探测器［J］. 发光学报， 2020， 41（9）： 1165-1171. doi: 10.37188/fgxb20204109.1165http://dx.doi.org/10.37188/fgxb20204109.1165

LAI L， MO H L， FU S J， et al. Preparation of gallium oxide microcrystalline thin films and its solar blind DUV photodetector ［J］. Chin. J. Lumin.， 2020， 41（9）： 1165-1171. （in Chinese）. doi: 10.37188/fgxb20204109.1165http://dx.doi.org/10.37188/fgxb20204109.1165

冯秋菊，李芳，李彤彤，等. 外电场辅助化学气相沉积方法制备网格状β-Ga2O3纳米线及其特性研究［J］. 物理学报， 2018， 67（21）： 218101-1-6. doi: 10.7498/aps.67.20180805http://dx.doi.org/10.7498/aps.67.20180805

FENG Q J， LI F， LI T T， et al. Growth and characterization of grid-like β-Ga2O3 nanowires by electric field assisted chemical vapor deposition method ［J］. Acta Phys. Sinica， 2018， 67（21）： 218101-1-6. （in Chinese）. doi: 10.7498/aps.67.20180805http://dx.doi.org/10.7498/aps.67.20180805

冯秋菊，解金珠，董增杰，等. 单根磷掺杂β-Ga2O3微米线日盲紫外探测器性能［J］. 发光学报， 2021， 42（11）： 1653-1660. doi: 10.37188/cjl.20210291http://dx.doi.org/10.37188/cjl.20210291

FENG Q J， XIE J Z， DONG Z J， et al. Performance of a single phosphorus-doped β-Ga2O3 microwire solar-blind ultraviolet photodetector ［J］. Chin. J. Lumin.， 2021， 42（11）： 1653-1660. （in Chinese）. doi: 10.37188/cjl.20210291http://dx.doi.org/10.37188/cjl.20210291

HOU Y N， MEI Z X， DU X L. Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1-xO ［J］. J. Phys. D： Appl. Phys.， 2014， 47（28）： 283001. doi: 10.1088/0022-3727/47/28/283001http://dx.doi.org/10.1088/0022-3727/47/28/283001

GUO D Y， LIU H， LI P G， et al. Zero-power-consumption solar-blind photodetector based on β-Ga2O3/NSTO heterojunction ［J］. ACS Appl. Mater. Interfaces， 2017， 9（2）： 1619-1628. doi: 10.1021/acsami.6b13771http://dx.doi.org/10.1021/acsami.6b13771

OH S， KIM H W， KIM J. High gain β-Ga2O3 solar-blind Schottky barrier photodiodes via carrier multiplication process ［J］. ECS J. Solid State Sci. Technol.， 2018， 7（11）： Q196-Q200. doi: 10.1149/2.0151811jsshttp://dx.doi.org/10.1149/2.0151811jss

ZHENG Z H， WANG W， WU F， et al. Flexible assembly of the PEDOT∶PSS/ exfoliated β-Ga2O3 microwire hybrid heterojunction for high-performance self-powered solar-blind photodetector ［J］. Opt. Express， 2022， 30（12）： 21822-21832. doi: 10.1364/oe.461342http://dx.doi.org/10.1364/oe.461342

LV Z X， YAN S Q， MU W X， et al. A high responsivity and photosensitivity self-powered UV photodetector constructed by the CuZnS/Ga2O3 Heterojunction ［J］. Adv. Mater. Interfaces， 2023， 10（5）： 2202130-1-9. doi: 10.1002/admi.202202130http://dx.doi.org/10.1002/admi.202202130

YU J G， LOU J S， WANG Z， et al. Surface modification of β-Ga2O3 layer using Pt nanoparticles for improved deep UV photodetector performance ［J］. J. Alloys Compd.， 2021， 872： 159508-1-9. doi: 10.1016/j.jallcom.2021.159508http://dx.doi.org/10.1016/j.jallcom.2021.159508

MICHAELSON H B. The work function of the elements and its periodicity ［J］. J. Appl. Phys.， 1977， 48（11）： 4729-4733. doi: 10.1063/1.323539http://dx.doi.org/10.1063/1.323539

MOHAMED M， IRMSCHER K， JANOWITZ C， et al. Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3 ［J］. Appl. Phys. Lett.， 2012， 101（13）： 132106-1-5. doi: 10.1063/1.4755770http://dx.doi.org/10.1063/1.4755770

LIU N S， FANG G J， ZENG W， et al. Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction ［J］. ACS Appl. Mater. Interfaces， 2010， 2（7）： 1973-1979. doi: 10.1021/am100277qhttp://dx.doi.org/10.1021/am100277q

刘浩，邓宏，韦敏，等. 氧化镓薄膜的制备及其日盲紫外探测性能研究［J］. 发光学报， 2015， 36（8）： 906-911. doi: 10.3788/fgxb20153608.0906http://dx.doi.org/10.3788/fgxb20153608.0906

LIU H， DENG H， WEI M， et al. Preparation and ultraviolet detection performance of Ga2O3 thin films ［J］. Chin. J. Lumin.， 2015， 36（8）： 906-911. （in Chinese）. doi: 10.3788/fgxb20153608.0906http://dx.doi.org/10.3788/fgxb20153608.0906

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Comprehensive Investigation of Pt/β-Ga2O3 Deep-UV Schottky Photodiode Highlighting Effective Carriers Injection and Self-powered Operation

DOI：10.37188/CJL.20220420

摘要

Abstract

关键词

Keywords

references

Comprehensive Investigation of Pt/β-Ga₂O₃ Deep-UV Schottky Photodiode Highlighting Effective Carriers Injection and Self-powered Operation