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1.Innovation Center of Gallium Oxide Semiconductor(IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
2.National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Published:05 May 2023,
Received:19 December 2022,
Revised:03 January 2023,
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胡继,刘增,唐为华.Pt/β⁃Ga2O3深紫外肖特基光电二极管的界面载流子注入和自驱动特性[J].发光学报,2023,44(05):881-888.
HU Ji,LIU Zeng,TANG Weihua.Comprehensive Investigation of Pt/β-Ga2O3 Deep-UV Schottky Photodiode Highlighting Effective Carriers Injection and Self-powered Operation[J].Chinese Journal of Luminescence,2023,44(05):881-888.
胡继,刘增,唐为华.Pt/β⁃Ga2O3深紫外肖特基光电二极管的界面载流子注入和自驱动特性[J].发光学报,2023,44(05):881-888. DOI: 10.37188/CJL.20220420.
HU Ji,LIU Zeng,TANG Weihua.Comprehensive Investigation of Pt/β-Ga2O3 Deep-UV Schottky Photodiode Highlighting Effective Carriers Injection and Self-powered Operation[J].Chinese Journal of Luminescence,2023,44(05):881-888. DOI: 10.37188/CJL.20220420.
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