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1.Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China
2.National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China
Published Online:05 February 2023,
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胡继,刘增,唐为华.Pt/β-Ga2O3深紫外肖特基光电二极管的界面载流子注入和自驱动特性研究[J].发光学报,
HU Ji,LIU Zeng,TANG Wei-hua.Comprehensive investigation of Pt/β-Ga2O3 deep-UV Schottky photodiode highlighting effective carriers injection and self-powered operation[J].Chinese Journal of Luminescence,
胡继,刘增,唐为华.Pt/β-Ga2O3深紫外肖特基光电二极管的界面载流子注入和自驱动特性研究[J].发光学报, DOI:10.37188/CJL.20220420
HU Ji,LIU Zeng,TANG Wei-hua.Comprehensive investigation of Pt/β-Ga2O3 deep-UV Schottky photodiode highlighting effective carriers injection and self-powered operation[J].Chinese Journal of Luminescence, DOI:10.37188/CJL.20220420
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