Determination and Experimental Study of OLED Junction Temperature Based on PtOEP Molecular Temperature Probe

DING Chuan; JIANG Xuesong; XU Zhengyin; WANG Zhongqiang; WANG Hua

doi:10.37188/CJL.20220417

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Determination and Experimental Study of OLED Junction Temperature Based on PtOEP Molecular Temperature Probe

Luminescence Industry and Technology Frontier | 更新时间：2023-06-28

- Determination and Experimental Study of OLED Junction Temperature Based on PtOEP Molecular Temperature Probe
- Chinese Journal of Luminescence Vol. 44, Issue 6, Pages: 1069-1076(2023)
- 作者机构：
  
  1.太原理工大学新材料界面科学与工程教育部重点实验室，山西太原　030024
  2.江苏三月科技股份有限公司，江苏无锡　214112
- 作者简介：
- 基金信息：
  
  Shanxi Provincial Natural Science Foundation of China(20210302123149);Research Project Supported by Shanxi Scholarship Council of China(2022⁃046)
- DOI：10.37188/CJL.20220417
  CLC：
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DING Chuan, JIANG Xuesong, XU Zhengyin, et al. Determination and Experimental Study of OLED Junction Temperature Based on PtOEP Molecular Temperature Probe. [J]. Chinese Journal of Luminescence 44(6):1069-1076(2023)
DOI：

DING Chuan, JIANG Xuesong, XU Zhengyin, et al. Determination and Experimental Study of OLED Junction Temperature Based on PtOEP Molecular Temperature Probe. [J]. Chinese Journal of Luminescence 44(6):1069-1076(2023) DOI： 10.37188/CJL.20220417.

摘要

使用正性光敏聚酰亚胺（PSPI）和光刻技术制备了一系列不同图案化的有机发光二极管（OLED）器件，以铂八乙基卟啉（PtOEP）作为分子温度探针探究不同图案化OLED所产生的热效应，并进一步研究不同热效应对OLED器件的影响。结果表明，像素尺寸在500 μm以下时，器件工作中产生的热效应与像素尺寸呈正相关，且与线宽和总开口面积无关；而像素尺寸达到500 μm以上时，器件中产生的热效应没有进一步增长。其中5 μm孔径的像素在室温10 mA/cm,2,电流密度下工作时，器件的温度为303.29 K，而相同条件下像素尺寸为 2 000 μm时，器件温度可高达314.65 K；当环境温度升至323.15 K时，器件所产生的热效应呈现相同的趋势。具有不同热效应器件的外量子效率曲线表明，器件温度的升高导致外量子效率降低，其原因是温度升高导致载流子迁移速率加快，但同时也使三线态激子之间及激子与极化子之间的碰撞概率升高，从而加剧激子猝灭，导致效率下降。

Abstract

The thermal effect of OLED device was studied by PtOEP molecular temperature probe and different patterned OLED substrate， which was prepared with positive photosensitive polyimide （PSPI） and photolithography. The results show when the pixel size is less than 500 μm， the thermal effect is positively correlated with the pixel size， and independent of the line width and total opening area. However， when the pixel size reaches more than 500 μm， the thermal effect does not increase further. When 5 μm pixel works at a current density of 10 mA/cm,2 ,at room temperature， the temperature of the device is 303.29 K. When the pixel size is 2 000 μm under the same conditions， the device temperature can reach 314.65 K. When the ambient temperature rises to 323.15 K， the thermal effect of the device shows the same trend. The EQE curves of devices with different thermal effects show that the increase of device temperature leads to the decrease of external quantum efficiency. The reason is that the increase of temperature improves carrier migration rate， but also increases the probability of collision between triplet excitons and between excitons and polarons， which leads to the exciton quenching and the decrease of efficiency.

关键词

图案化OLEDPtOEP分子温度探针结温

Keywords

patterned OLEDPtOEPmolecular temperature probejunction temperature

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