A Stable UV Photodetector Based on n-ZnS/p-CuSCN Nanofilm with High On/Off Ratio

WEI Yao-qi; QUAN Jia-le; ZHAO Qing-qiang; ZHOU Ming-chen; HAN San-can

doi:10.37188/CJL.20220069

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A Stable UV Photodetector Based on n-ZnS/p-CuSCN Nanofilm with High On/Off Ratio

Device Fabrication and Physics | 更新时间：2022-10-19

- A Stable UV Photodetector Based on n-ZnS/p-CuSCN Nanofilm with High On/Off Ratio
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 6, Pages: 911-921(2022)
- 作者机构：
  
  上海理工大学材料与化学学院，上海　200093
- 作者简介：
- 基金信息：
  
  国家自然科学基金(51802195);上海市教委晨光学者项目(19CG53)
- DOI：10.37188/CJL.20220069
  CLC： TN23
- Published：05 June 2022，
  
  Received：01 March 2022，
  
  Revised：14 March 2022，
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魏瑶琪,全家乐,赵庆强等.一种基于n-ZnS/p-CuSCN纳米薄膜的高开关比和稳定性紫外光电探测器[J].发光学报,2022,43(06):911-921.

WEI Yao-qi,QUAN Jia-le,ZHAO Qing-qiang,et al.A Stable UV Photodetector Based on n-ZnS/p-CuSCN Nanofilm with High On/Off Ratio[J].Chinese Journal of Luminescence,2022,43(06):911-9211.
魏瑶琪,全家乐,赵庆强等.一种基于n-ZnS/p-CuSCN纳米薄膜的高开关比和稳定性紫外光电探测器[J].发光学报,2022,43(06):911-921. DOI： 10.37188/CJL.20220069.

WEI Yao-qi,QUAN Jia-le,ZHAO Qing-qiang,et al.A Stable UV Photodetector Based on n-ZnS/p-CuSCN Nanofilm with High On/Off Ratio[J].Chinese Journal of Luminescence,2022,43(06):911-9211. DOI： 10.37188/CJL.20220069.

摘要

通过原位生长法制备了一种CuSCN纳米薄膜紫外光电探测器，在-1 V 偏压下，入射光为350 nm时， CuSCN紫外光电探测器的开关比～94，响应/恢复时间~1.41 s/1.44 s。但这种器件仍不能称之为一种高性能的光电探测器。为进一步提高CuSCN纳米薄膜的光电性能，我们制备了一种基于 n-ZnS/p-CuSCN 复合薄膜的紫外光电探测器，并对制备的样品进行了形貌、成分和性能分析。结果显示，在-1 V 偏压下，入射波长为350 nm时， ZnS/CuSCN紫外光电探测器表现出比CuSCN紫外光电探测器更高的光电流和更低的暗电流，分别为1.22×10

-5

A和4.8×10

-9

A。基于ZnS/CuSCN 纳米薄膜的紫外光电探测器开关比-2 542，响应/恢复时间为0.47 s/0.48 s，在350 nm波长下具备最佳的响应度和探测率，分别为5.17 mA/W和1.32 × 10

Jones。此外，n-ZnS/p-CuSCN复合薄膜在室温下性能稳定，具有作为高性能紫外探测器的潜力。

Abstract

Herein， We fabricated a CuSCN nanofilm ultraviolet（UV） photodetector（PD） using an

in situ

growth method. When the bias is -1 V and the incident light is 350 nm， the on/off ratio of the CuSCN PD is ~94， and the rise/decay time is ～1.41 s/1.44 s. However， such a device still cannot be called a high-performance photodetector. To improve the optoelectronic properties of CuSCN nanofilm further， we fabricated a UV photodetector based on n-ZnS/p-CuSCN composite nanofilm and analyzed its morphology， composition， and properties. The photocurrent and dark current of the ZnS/CuSCN UV photodetectors are 1.22×10

-5

A and 4.8×10

-9

A， respectively（at -1 V， 350 nm）. The ZnS/CuSCN nanofilms' on/off ratio of ~2 542 and rise/decay time is 0.47 s/0.48 s. Besides， the n-ZnS/p-CuSCN nanofilm UV PDs have the best responsivity and detectivity at 350 nm with 5.17 mA/W and 1.32 × 10

Jones， respectively. In addition， the n-ZnS/p-CuSCN composite film is stable at room temperature， which indicates its great potential as a high-performance UV photodetector.

关键词

光电探测器p-n结ZnS/CuSCN开关比

Keywords

photodetectorp-n junctionZnS/CuSCNon/off ratio

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