A Stable UV Photodetector Based on n-ZnS/p-CuSCN Nanofilm with High On/Off Ratio

WEI Yao-qi; QUAN Jia-le; ZHAO Qing-qiang; ZHOU Ming-chen; HAN San-can

doi:10.37188/CJL.20220069

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A Stable UV Photodetector Based on n-ZnS/p-CuSCN Nanofilm with High On/Off Ratio

Device Fabrication and Physics | 更新时间：2022-10-19

- A Stable UV Photodetector Based on n-ZnS/p-CuSCN Nanofilm with High On/Off Ratio
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 6, Pages: 911-921(2022)
- 作者机构：
  
  上海理工大学材料与化学学院，上海　200093
- 作者简介：
- 基金信息：
  
  国家自然科学基金(51802195);上海市教委晨光学者项目(19CG53)
- DOI：10.37188/CJL.20220069
  CLC： TN23
- Published：05 June 2022，
  
  Received：01 March 2022，
  
  Revised：14 March 2022，
- 稿件说明：
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魏瑶琪,全家乐,赵庆强等.一种基于n-ZnS/p-CuSCN纳米薄膜的高开关比和稳定性紫外光电探测器[J].发光学报,2022,43(06):911-921.

WEI Yao-qi,QUAN Jia-le,ZHAO Qing-qiang,et al.A Stable UV Photodetector Based on n-ZnS/p-CuSCN Nanofilm with High On/Off Ratio[J].Chinese Journal of Luminescence,2022,43(06):911-9211.
魏瑶琪,全家乐,赵庆强等.一种基于n-ZnS/p-CuSCN纳米薄膜的高开关比和稳定性紫外光电探测器[J].发光学报,2022,43(06):911-921. DOI： 10.37188/CJL.20220069.

WEI Yao-qi,QUAN Jia-le,ZHAO Qing-qiang,et al.A Stable UV Photodetector Based on n-ZnS/p-CuSCN Nanofilm with High On/Off Ratio[J].Chinese Journal of Luminescence,2022,43(06):911-9211. DOI： 10.37188/CJL.20220069.

摘要

通过原位生长法制备了一种CuSCN纳米薄膜紫外光电探测器，在-1 V 偏压下，入射光为350 nm时， CuSCN紫外光电探测器的开关比～94，响应/恢复时间~1.41 s/1.44 s。但这种器件仍不能称之为一种高性能的光电探测器。为进一步提高CuSCN纳米薄膜的光电性能，我们制备了一种基于 n-ZnS/p-CuSCN 复合薄膜的紫外光电探测器，并对制备的样品进行了形貌、成分和性能分析。结果显示，在-1 V 偏压下，入射波长为350 nm时， ZnS/CuSCN紫外光电探测器表现出比CuSCN紫外光电探测器更高的光电流和更低的暗电流，分别为1.22×10

-5

A和4.8×10

-9

A。基于ZnS/CuSCN 纳米薄膜的紫外光电探测器开关比-2 542，响应/恢复时间为0.47 s/0.48 s，在350 nm波长下具备最佳的响应度和探测率，分别为5.17 mA/W和1.32 × 10

Jones。此外，n-ZnS/p-CuSCN复合薄膜在室温下性能稳定，具有作为高性能紫外探测器的潜力。

Abstract

Herein， We fabricated a CuSCN nanofilm ultraviolet（UV） photodetector（PD） using an

in situ

growth method. When the bias is -1 V and the incident light is 350 nm， the on/off ratio of the CuSCN PD is ~94， and the rise/decay time is ～1.41 s/1.44 s. However， such a device still cannot be called a high-performance photodetector. To improve the optoelectronic properties of CuSCN nanofilm further， we fabricated a UV photodetector based on n-ZnS/p-CuSCN composite nanofilm and analyzed its morphology， composition， and properties. The photocurrent and dark current of the ZnS/CuSCN UV photodetectors are 1.22×10

-5

A and 4.8×10

-9

A， respectively（at -1 V， 350 nm）. The ZnS/CuSCN nanofilms' on/off ratio of ~2 542 and rise/decay time is 0.47 s/0.48 s. Besides， the n-ZnS/p-CuSCN nanofilm UV PDs have the best responsivity and detectivity at 350 nm with 5.17 mA/W and 1.32 × 10

Jones， respectively. In addition， the n-ZnS/p-CuSCN composite film is stable at room temperature， which indicates its great potential as a high-performance UV photodetector.

关键词

光电探测器p-n结ZnS/CuSCN开关比

Keywords

photodetectorp-n junctionZnS/CuSCNon/off ratio

references

韩悦，李国辉，梁强兵，等. 全无机钙钛矿CsPbX3纳米晶的研究进展［J］. 发光学报， 2020，41（5）：542-556. doi: 10.3788/fgxb20204105.0542http://dx.doi.org/10.3788/fgxb20204105.0542

HAN Y，LI G H，LIANG Q B，et al. Advances of all-inorganic perovskite CsPbX3 nanocrystals ［J］. Chin. J. Lumin.， 2020，41（5）：542-556. （in Chinese）. doi: 10.3788/fgxb20204105.0542http://dx.doi.org/10.3788/fgxb20204105.0542

张翼鹏，王雪，纪佩璇，等. 不同响应机制下的石墨烯基光电探测器研究进展［J］. 发光学报， 2022，43（4）：552-575. doi: 10.37188/CJL.20210359http://dx.doi.org/10.37188/CJL.20210359

ZHANG Y P，WANG X，JI P X，et al. Research progress of graphene based photodetectors under different response mechanisms ［J］. Chin. J. Lumin.， 2022，43（4）：552-575. （in Chinese）. doi: 10.37188/CJL.20210359http://dx.doi.org/10.37188/CJL.20210359

CHEN J X，OUYANG W X，YANG W，et al. Recent progress of heterojunction ultraviolet photodetectors：materials，integrations，and applications ［J］. Adv. Funct. Mater.， 2020，30（16）：1909909. doi: 10.1002/adfm.201909909http://dx.doi.org/10.1002/adfm.201909909

SHAO D L，QIN L Q，SAWYER S. Near ultraviolet photodetector fabricated from polyvinyl-alcohol coated In2O3 nanoparticles ［J］. Appl. Surf. Sci.， 2012，261：123-127. doi: 10.1016/j.apsusc.2012.07.111http://dx.doi.org/10.1016/j.apsusc.2012.07.111

CAI S，XU X J，YANG W，et al. Materials and designs for wearable photodetectors ［J］. Adv. Mater.， 2019，31（18）：1808138-1-15. doi: 10.1002/adma.201808138http://dx.doi.org/10.1002/adma.201808138

SANG L W，LIAO M Y，SUMIYA M. A comprehensive review of semiconductor ultraviolet photodetectors：from thin film to one-dimensional nanostructures ［J］. Sensors（Basel）， 2013，13（8）：482-518. doi: 10.3390/s130810482http://dx.doi.org/10.3390/s130810482

CHEN H Y，LIU H，ZHANG Z M，et al. Nanostructured photodetectors：from ultraviolet to terahertz ［J］. Adv. Mater.， 2016，28（3）：403-433. doi: 10.1002/adma.201503534http://dx.doi.org/10.1002/adma.201503534

XIA F N，MUELLER T，LIN Y M，et al. Ultrafast graphene photodetector ［J］. Nat. Nanotechnol.， 2009，4（12）：839-843. doi: 10.1038/nnano.2009.292http://dx.doi.org/10.1038/nnano.2009.292

LIU L，YANG C，PATANÈ A，et al. High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN ［J］. Nanoscale， 2017，9（24）：8142-8148. doi: 10.1039/c7nr01290jhttp://dx.doi.org/10.1039/c7nr01290j

李超群，陈洪宇，张振中，等. 电极间距对ZnO基MSM紫外光电探测器性能的影响［J］. 发光学报， 2014，35（10）：1172-1175. doi: 10.3788/fgxb20143510.1172http://dx.doi.org/10.3788/fgxb20143510.1172

LI C Q，CHEN H Y，ZHANG Z Z，et al. Effect of electrode spacing on the properties of ZnO based MSM ultraviolet photodetector ［J］. Chin. J. Lumin.， 2014，35（10）：1172-1175. （in Chinese）. doi: 10.3788/fgxb20143510.1172http://dx.doi.org/10.3788/fgxb20143510.1172

陈雪，魏志鹏. 具有高光开关比和高响应度的单根In2O3纳米线紫外光电晶体管［J］. 发光学报， 2021，42（2）：208-214. doi: 10.37188/CJL.20200376http://dx.doi.org/10.37188/CJL.20200376

CHEN X，WEI Z P. Single In2O3 nanowire ultraviolet phototransistor with high optical on-off ratio and high responsivity ［J］. Chin. J. Lumin.， 2021，42（2）：208-214. （in Chinese）. doi: 10.37188/CJL.20200376http://dx.doi.org/10.37188/CJL.20200376

HATCH S M，BRISCOE J，DUNN S. A self-powered ZnO-nanorod/CuSCN UV photodetector exhibiting rapid response ［J］. Adv. Mater.， 2013，25（6）：867-871. doi: 10.1002/adma.201204488http://dx.doi.org/10.1002/adma.201204488

WYATT-MOON G，GEORGIADOU D G，SEMPLE J，et al. Deep ultraviolet Copper（Ⅰ） thiocyanate （CuSCN） photodetectors based on coplanar nanogap electrodes fabricated via adhesion lithography ［J］. ACS Appl. Mater. Interfaces， 2017，9（48）：41965-41972. doi: 10.1021/acsami.7b12942http://dx.doi.org/10.1021/acsami.7b12942

YANG Z，WANG M Q，DING J J，et al. Semi-transparent ZnO-CuI/CuSCN photodiode detector with narrow-band UV photoresponse ［J］. ACS Appl. Mater. Interfaces， 2015，7（38）：21235-21244. doi: 10.1021/acsami.5b05222http://dx.doi.org/10.1021/acsami.5b05222

KA I，GERLEIN L F，ASUO I M，et al. Solution-processed p-type copper thiocyanate（CuSCN） enhanced sensitivity of PbS-quantum-dots-based photodiode ［J］. ACS Photonics， 2020，7（7）：1628-1635. doi: 10.1021/acsphotonics.0c00491http://dx.doi.org/10.1021/acsphotonics.0c00491

YAN G H，JI Z，LI Z W，et al. All-inorganic Cs2AgBiBr6/CuSCN-based photodetectors for weak light imaging ［J］. Sci. China. Mater.， 2020，64（1）：198-208. doi: 10.1007/s40843-020-1358-5http://dx.doi.org/10.1007/s40843-020-1358-5

HU K，TENG F，ZHENG L X，et al. Binary response Se/ZnO p-n heterojunction UV photodetector with high on/off ratio and fast speed ［J］. Laser Photonics Rev.， 2017，11（1）：1600257-1-7. doi: 10.1002/lpor.201600257http://dx.doi.org/10.1002/lpor.201600257

YAN F G，WEI Z M，WEI X，et al. Toward high-performance photodetectors based on 2D materials：strategy on methods ［J］. Small Methods， 2018，2（5）：1700349-1-14. doi: 10.1002/smtd.201700349http://dx.doi.org/10.1002/smtd.201700349

YANG W，HU K，TENG F，et al. High-performance silicon-compatible large-area UV-to-visible broadband photodetector based on integrated lattice-matched type ⅡSe/n-Si heterojunctions ［J］. Nano Lett.， 2018，18（8）：4697-4703. doi: 10.1021/acs.nanolett.8b00988http://dx.doi.org/10.1021/acs.nanolett.8b00988

HU K，CHEN H Y，JIANG M M，et al. Broadband photoresponse enhancement of a high-performance t-se microtube photodetector by plasmonic metallic nanoparticles ［J］. Adv. Funct. Mater.， 2016，26（36）：6641-6648. doi: 10.1002/adfm.201602408http://dx.doi.org/10.1002/adfm.201602408

CHEN C，XIE X Q，ANASORI B，et al. MoS2-on-MXene heterostructures as highly reversible anode materials for lithium-ion batteries ［J］. Angew. Chem.， 2018，57（7）：1846-1850. doi: 10.1002/anie.201710616http://dx.doi.org/10.1002/anie.201710616

KWAK J Y，HWANG J，CALDERON B，et al. Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts ［J］. Nano Lett.， 2014，14（8）：4511-4516. doi: 10.1021/nl5015316http://dx.doi.org/10.1021/nl5015316

TIAN W，SUN H X，CHEN L，et al. Low-dimensional nanomaterial/Si heterostructure‐based photodetectors ［J］. InfoMat.， 2019，1（2）：140-163.

LI X，GAO S Y，WANG G N，et al. A self-powered ultraviolet photodetector based on TiO2/Ag/ZnS nanotubes with high stability and fast response ［J］. J. Mater. Chem. C， 2020，8（4）：1353-1358. doi: 10.1039/c9tc05326chttp://dx.doi.org/10.1039/c9tc05326c

LI F，XIA Z G，LIU Q L. Controllable synthesis and optical properties of ZnS∶Mn2+/ZnS/ZnS∶Cu2+/ZnS core/multi-shell quantum dots towards efficient white light emission ［J］. ACS Appl. Mater. Interfaces， 2017，9（11）：9833-9839. doi: 10.1021/acsami.6b15997http://dx.doi.org/10.1021/acsami.6b15997

ARJUNAN S，KAVITHA H P，PONNUSAMY S，et al. ZnS/CuS nanocomposites： an effective strategy to transform UV active ZnS to UV and Vis light active ZnS ［J］. J. Mater. Sci： Mater Electoron.， 2016，27（9）：9022-9033. doi: 10.1007/s10854-016-4935-1http://dx.doi.org/10.1007/s10854-016-4935-1

SEPALAGE G A，MEYER S，PASCOE A R，et al. A facile deposition method for CuSCN：exploring the influence of CuSCN on J⁃V hysteresis in planar perovskite solar cells ［J］. Nano Energy， 2017，32：310-319. doi: 10.1016/j.nanoen.2016.12.043http://dx.doi.org/10.1016/j.nanoen.2016.12.043

ALTIN İ，POLAT İ，BACAKSIZ E，et al. ZnO and ZnS microrods coated on glass and photocatalytic activity ［J］. Appl. Surf. Sci.， 2012，258（11）： 4861-4865. doi: 10.1016/j.apsusc.2012.01.082http://dx.doi.org/10.1016/j.apsusc.2012.01.082

ZHU Y，ZHANG Y F，YAN L M，et al. Novel ultraviolet photodetector with ultrahigh photosensitivity employing SILAR-deposited ZnS film on MgZnO ［J］. J. Alloys Compd.， 2020，832： 155022-1-7. doi: 10.1016/j.jallcom.2020.155022http://dx.doi.org/10.1016/j.jallcom.2020.155022

ZHANG K，DING J，LOU Z，et al. Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance ［J］. Nanoscale， 2017，9（40）： 15416-15422. doi: 10.1039/c7nr06118hhttp://dx.doi.org/10.1039/c7nr06118h

LIN H L，WEI L，WU C C，et al. High-performance self-powered photodetectors based on ZnO/ZnS core-shell nanorod arrays ［J］. Nanoscale Res. Lett.， 2016，11（1）： 420-1-7. doi: 10.1186/s11671-016-1639-7http://dx.doi.org/10.1186/s11671-016-1639-7

KUANG W J，LIU X，LI Q，et al. Solution-processed solar-blind ultraviolet photodetectors based on ZnS quantum dots ［J］. IEEE Photon. Technol. Lett.， 2018，30（15）： 1384-1387. doi: 10.1109/lpt.2018.2849345http://dx.doi.org/10.1109/lpt.2018.2849345

XIA Y，ZHAI G M，ZHENG Z，et al. Solution-processed solar-blind deep ultraviolet photodetectors based on strongly quantum confined ZnS quantum dots ［J］. J. Mater. Chem. C， 2018，6（42）： 11266-11271. doi: 10.1039/c8tc03977ahttp://dx.doi.org/10.1039/c8tc03977a

CHENG S D，HAN S C，CAO Z Y，et al. Wearable and ultrasensitive strain sensor based on high-quality GaN pn junction microwire arrays ［J］. Small， 2020，16（16）： 1907461-1-8. doi: 10.1002/smll.201907461http://dx.doi.org/10.1002/smll.201907461

GONG C H，CHU J W，QIAN S F，et al. Large-scale ultrathin 2D wide-bandgap BiOBr nanoflakes for gate-controlled deep-ultraviolet phototransistors ［J］. Adv. Mater.， 2020，32（12）： 1908242-1-9. doi: 10.1002/adma.201908242http://dx.doi.org/10.1002/adma.201908242

KIM J H，RHO H，KIM J，et al. Raman spectroscopy of ZnS nanostructures ［J］. J. Raman Spectrosc.， 2012，43（7）： 906-910. doi: 10.1002/jrs.3116http://dx.doi.org/10.1002/jrs.3116

HO C H，VARADHAN P，WANG H H，et al. Raman selection rule for surface optical phonons in ZnS nanobelts ［J］. Nanoscale， 2016，8（11）：5954-5958. doi: 10.1039/c5nr07268ahttp://dx.doi.org/10.1039/c5nr07268a

XIONG Q H，CHEN G，ACORD J D，et al. Optical properties of rectangular cross-sectional ZnS nanowires ［J］. Nano Lett.， 2004，4（9）：1663-1668. doi: 10.1021/nl049169rhttp://dx.doi.org/10.1021/nl049169r

VIRIEUX H，LE TROEDEC M，CROS-GAGNEUX A，et al. InP/ZnS nanocrystals：coupling NMR and XPS for fine surface and interface description ［J］. J. Am. Chem. Soc.， 2012，134（48）：19701-19708. doi: 10.1021/ja307124mhttp://dx.doi.org/10.1021/ja307124m

RAMACHANDRAN K，JEGANATHAN C，KARUPPUCHAMY S. Surfactant assisted electrochemical growth of ultra-thin CuSCN nanowires for inverted perovskite solar cell applications ［J］. Org. Electron.， 2021，95：106214-1-9. doi: 10.1016/j.orgel.2021.106214http://dx.doi.org/10.1016/j.orgel.2021.106214

TSAI C T，GOTTAM S R，KAO P C，et al. Improvement of OLED performances by applying annealing and surface treatment on electro-deposited CuSCN hole injection layer ［J］. Synthetic. Met.， 2020，269，116537-1-8. doi: 10.1016/j.synthmet.2020.116537http://dx.doi.org/10.1016/j.synthmet.2020.116537

JIANG H，PENG H，GUO H，et al. Interfacial mechanical strength enhancement for high-performance ZnS thin-film anodes ［J］. ACS Appl. Mater. Interfaces， 2020，12（46）：51344-51356. doi: 10.1021/acsami.0c13139http://dx.doi.org/10.1021/acsami.0c13139

DAI L W，STRELOW C，KIPP T，et al. Colloidal manganese-doped ZnS nanoplatelets and their optical properties ［J］. Chem. Mater.， 2021，33（1）：275-284. doi: 10.1021/acs.chemmater.0c03755http://dx.doi.org/10.1021/acs.chemmater.0c03755

HASSAN S，BERA S，GUPTA D，et al. MoSe2-Cu2S vertical p-n nanoheterostructures for high-performance photodetectors ［J］. ACS Appl. Mater. Interfaces， 2019，11（4）：4074-4083. doi: 10.1021/acsami.8b16205http://dx.doi.org/10.1021/acsami.8b16205

张旭. 降低Si基有机光电探测器暗电流的研究［J］. 甘肃科学学报， 2009，21（4）：54-57. doi: 10.3969/j.issn.1004-0366.2009.04.014http://dx.doi.org/10.3969/j.issn.1004-0366.2009.04.014

ZHANG X. Study on the reduction of the dark current in Si-based organic photodetector ［J］. J. Gansu Sci.， 2009，21（4）：54-57. （in Chinese）. doi: 10.3969/j.issn.1004-0366.2009.04.014http://dx.doi.org/10.3969/j.issn.1004-0366.2009.04.014

CAI J，XU X J，SU L X，et al. Self-powered n-SnO2/p-CuZnS core-shell microwire UV photodetector with optimized performance ［J］. Adv. Optical. Mater.， 2018，6（15）：1800213-1-7. doi: 10.1002/adom.201800213http://dx.doi.org/10.1002/adom.201800213

WANG Y C，WU C，GUO D Y，et al. All-oxide NiO/Ga2O3 p⁃n junction for self-powered UV photodetector ［J］. ACS Appl. Electron. Mater.， 2020，2（7）：2032-2038. doi: 10.1021/acsaelm.0c00301http://dx.doi.org/10.1021/acsaelm.0c00301

DAI W，PAN X，CHEN C，et al. Enhanced UV detection performance using a Cu-doped ZnO nanorod array film ［J］. RSC Adv.， 2014，4（60）：31969-31972. doi: 10.1039/c4ra04249bhttp://dx.doi.org/10.1039/c4ra04249b

XIN B，WU Y T，LIU X R，et al. High performance UV photodetector based on 2D non-layered CuGaS2 nanosheets ［J］. Semicond. Sci. Technol.， 2019，34（5）：055007-1-5. doi: 10.1088/1361-6641/ab0bdfhttp://dx.doi.org/10.1088/1361-6641/ab0bdf

AGGARWAL N，KRISHNA S，SHARMA A，et al. A highly responsive self-driven UV photodetector using GaN nanoflowers ［J］. Adv. Electron. Mater.， 2017，3（5）：1700036-1-7. doi: 10.1002/aelm.201700036http://dx.doi.org/10.1002/aelm.201700036

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