Xiang CHEN, Hao-bing ZHAO, Zi-qi LUO, et al. Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses. [J]. Chinese Journal of Luminescence 43(4):501-508(2022)
DOI:
Xiang CHEN, Hao-bing ZHAO, Zi-qi LUO, et al. Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses. [J]. Chinese Journal of Luminescence 43(4):501-508(2022) DOI: 10.37188/CJL.20220034.
Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses增强出版
Indium phosphide(InP) quantum dots(QDs) have drawn much attention in quantum dots light-emitting diodes(QLED) owing to their heavy-metal-free components and outstanding optics and electricity properties. In this paper
green InP/ZnSe/ZnS QDs were prepared with ZnSe and ZnS as the shell layers
QDs with various luminescence properties obtained by regulating the thickness of the ZnSe shell layer. When the mass ratio of Se powder to Zn(St)
2
is 1∶15
the PL peak of InP/ZnSe/ZnS QDs is 522 nm
the half-peak width is 45 nm and the PLQY is as high as 86%. QLED based on different thicknesses of ZnSe shell layers was prepared
the residual organic solvent in the QDs films was removed by vacuum evaporation to avoid the destruction of QDs performance by high temperature annealing
and the best EQE of 2.2% was obtained for the QLED devices.
KIM T, KIM K H, KIM S, et al. Efficient and stable blue quantum dot light-emitting diode [J]. Nature, 2020, 586(7829):385-389.
CORREA-BAENA J P, ABATE A, SALIBA M, et al. The rapid evolution of highly efficient perovskite solar cells [J]. Energy Environ. Sci., 2017, 10(3):710-727.
LIU Y, ZHENG Y H, ZHU Y B, et al. Unclonable perovskite fluorescent dots with fingerprint pattern for multilevel anticounterfeiting [J]. ACS Appl. Mater. Interfaces, 2020, 12(35):39649-39656.
SHEN H B, GAO Q, ZHANG Y B, et al. Visible quantum dot light-emitting diodes with simultaneous high brightness and efficiency [J]. Nat. Photonics, 2019, 13(3):192-197.
ZHAN Z H, CHEN C E, MO D X, et al. Preparation,fluorescent properties and cell imaging of near infrared fluorescent carbon quantum dots with single excited double emission [J]. Chin. J. Lumin., 2021, 42(8):1307-1313. (in Chinese)
WON Y H, CHO O, KIM T, et al. Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes [J]. Nature, 2019, 575(7784):634-638.
CAO F, WANG S, WANG F J, et al. A layer-by-layer growth strategy for large-size InP/ZnSe/ZnS core-shell quantum dots enabling high-efficiency light-emitting diodes [J]. Chem. Mater., 2018, 30(21):8002-8007.
PENG X D, YAN C, CHUN F J, et al. A review of low-dimensional metal halide perovskites for blue light emitting diodes [J]. J. Alloys Compd., 2021, 883:160727.
XIAO Z X, PENG M, MEI Y C, et al. Effect of organosilicone and mineral silicon fertilizers on chemical forms of cadmium and lead in soil and their accumulation in rice [J]. Environ. Pollut., 2021, 283:117107.
KIM T G, ZHEREBETSKYY D, BEKENSTEIN Y, et al. Trap passivation in indium-based quantum dots through surface fluorination:mechanism and applications [J]. ACS Nano, 2018, 12(11):11529-11540.
ZHANG H, MA X Y, LIN Q L, et al. High-brightness blue InP quantum dot-based electroluminescent devices:the role of shell thickness [J]. J. Phys. Chem. Lett., 2020, 11(3):960-967.
ZHANG W D, DING S H, ZHUANG W D, et al. InP/ZnS/ZnS core/shell blue quantum dots for efficient light-emitting diodes [J]. Adv. Funct. Mater., 2020, 30(49):2005303-1-9.
WU Z H, LIU P, ZHANG W D, et al. Development of InP quantum dot-based light-emitting diodes [J]. ACS Energy Lett., 2020, 5(4):1095-1106.
WEI J X, HU Z, ZHOU W J, et al. Emission tuning of highly efficient quaternary Ag-Cu-Ga-Se/ZnSe quantum dots for white light-emitting diodes [J]. J. Colloid Interface Sci., 2021, 602:307-315.
PELAYO-CEJA J E, ZAZUETA-RAYNAUD A, LOPEZ-DELGADO R, et al. Anomalous Stokes shift of colloidal quantum dots and their influence on solar cell performance [J]. Microsyst. Technol., 2019, doi: 10.1007/s00542-019-04603-zhttp://doi.org/10.1007/s00542-019-04603-z.
HU L, WU H Z. Colorimetric study of annealing effect on fluorescence performance of CdSe quantum dots [J]. Chin. J. Lumin., 2015, 36(6):610-616. (in Chinese)
CHEN X H, YUAN X, HUA J, et al. Shell-dependent thermal stability of CdSe core/shell quantum dot photoluminescence [J]. Chin. J. Lumin., 2014, 35(9):1051-1057. (in Chinese)
SHIN D W, SUH Y H, LEE S, et al. Waterproof flexible InP@ZnSeS quantum dot light-emitting diode [J]. Adv. Opt. Mater., 2020, 8(6):1901362-1-7.
WANG Y C, CHEN Z J, WANG T, et al. Efficient structure for InP/ZnS-based electroluminescence device by embedding the emitters in the electron-dominating interface [J]. J. Phys. Chem. Lett., 2020, 11(5):1835-1839.
LEE T, HAHM D, KIM K, et al. Highly efficient and bright inverted top-emitting InP quantum dot light-emitting diodes introducing a hole-suppressing interlayer [J]. Small, 2019, 15(50):1905162-1-7.
LI Y, HOU X Q, DAI X L, et al. Stoichiometry-controlled InP-based quantum dots:synthesis,photoluminescence,and electroluminescence [J]. J. Am. Chem. Soc., 2019, 141(16):6448-6452.
LAUFERSKY G, BRADLEY S, FRÉCAUT E, et al. Unraveling aminophosphine redox mechanisms for glovebox-free InP quantum dot syntheses [J]. Nanoscale, 2018, 10(18):8752-8762.
HENS Z, MARTINS J C. A solution NMR toolbox for characterizing the surface chemistry of colloidal nanocrystals [J]. Chem. Mater., 2013, 25(8):1211-1221.