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Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses
Synthesis and Properties of Materials | 更新时间:2022-04-20
    • Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses

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    • Chinese Journal of Luminescence   Vol. 43, Issue 4, Pages: 501-508(2022)
    • DOI:10.37188/CJL.20220034    

      CLC: O482.31
    • Published:01 April 2022

      Received:24 January 2022

      Revised:11 February 2022

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  • Xiang CHEN, Hao-bing ZHAO, Zi-qi LUO, et al. Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses. [J]. Chinese Journal of Luminescence 43(4):501-508(2022) DOI: 10.37188/CJL.20220034.

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Related Author

xiang CHEN
Hao-bing ZHAO
Zi-qi LUO
Hai-long HU
Tai-liang GUO
Fu-shan LI
CHEN Xiaoli
CHEN Peili

Related Institution

School of Physics and Information Engineering, Fuzhou University
Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China
South China Academy of Advanced Optoelectronics, South China Normal University
College of Electronic Engineering and Intelligence, Dongguan Institute of Technology
School of Microelectronics, South China University of Technology
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