Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses

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Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses

Synthesis and Properties of Materials | 更新时间：2022-04-20

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- Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 4, Pages: 501-508(2022)
- 作者机构：
  
  1.福州大学　物理与信息工程学院，福建　福州　350108
- 作者简介：
- 基金信息：
  
  National Natural Foundation of China(62075043)
- DOI：10.37188/CJL.20220034
  CLC：
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Xiang CHEN, Hao-bing ZHAO, Zi-qi LUO, et al. Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses. [J]. Chinese Journal of Luminescence 43(4):501-508(2022)
DOI：

Xiang CHEN, Hao-bing ZHAO, Zi-qi LUO, et al. Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses. [J]. Chinese Journal of Luminescence 43(4):501-508(2022) DOI： 10.37188/CJL.20220034.

摘要

磷化铟(InP)量子点(QDs)由于其不含重金属元素和出色的光电特性，在量子点发光二极管(QLED)领域引起了广泛关注。本文以ZnSe和ZnS作为壳层来制备绿色InP/ZnSe/ZnS QDs，通过调控ZnSe壳层的厚度得到不同发光性能的QDs。当Se粉与Zn(St),2,的质量比为1∶15时，InP/ZnSe/ZnS QDs的荧光发射峰为522 nm，半峰宽为45 nm，荧光量子效率高达86%。同时制备了基于不同ZnSe壳层厚度的QLED，并利用真空蒸发的方式去除QDs薄膜中残留的有机溶剂，避免了高温退火对QDs性能的破坏，最终得到稳定工作QLED器件，其最佳外量子效率为2.2%。

Abstract

Indium phosphide(InP) quantum dots(QDs) have drawn much attention in quantum dots light-emitting diodes(QLED) owing to their heavy-metal-free components and outstanding optics and electricity properties. In this paper, green InP/ZnSe/ZnS QDs were prepared with ZnSe and ZnS as the shell layers, QDs with various luminescence properties obtained by regulating the thickness of the ZnSe shell layer. When the mass ratio of Se powder to Zn(St),2, is 1∶15, the PL peak of InP/ZnSe/ZnS QDs is 522 nm, the half-peak width is 45 nm and the PLQY is as high as 86%. QLED based on different thicknesses of ZnSe shell layers was prepared, the residual organic solvent in the QDs films was removed by vacuum evaporation to avoid the destruction of QDs performance by high temperature annealing, and the best EQE of 2.2% was obtained for the QLED devices.

关键词

磷化铟量子点荧光量子效率发光二极管

Keywords

indium phosphide quantum dotsfluorescence quantum efficiencylight emitting diode

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School of Physics and Information Engineering， Fuzhou University

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