Xiang CHEN, Hao-bing ZHAO, Zi-qi LUO, et al. Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses. [J]. Chinese Journal of Luminescence 43(4):501-508(2022)
Xiang CHEN, Hao-bing ZHAO, Zi-qi LUO, et al. Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses. [J]. Chinese Journal of Luminescence 43(4):501-508(2022) DOI： 10.37188/CJL.20220034.
Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses增强出版
Indium phosphide(InP) quantum dots(QDs) have drawn much attention in quantum dots light-emitting diodes(QLED) owing to their heavy-metal-free components and outstanding optics and electricity properties. In this paper, green InP/ZnSe/ZnS QDs were prepared with ZnSe and ZnS as the shell layers, QDs with various luminescence properties obtained by regulating the thickness of the ZnSe shell layer. When the mass ratio of Se powder to Zn(St),2, is 1∶15, the PL peak of InP/ZnSe/ZnS QDs is 522 nm, the half-peak width is 45 nm and the PLQY is as high as 86%. QLED based on different thicknesses of ZnSe shell layers was prepared, the residual organic solvent in the QDs films was removed by vacuum evaporation to avoid the destruction of QDs performance by high temperature annealing, and the best EQE of 2.2% was obtained for the QLED devices.
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