Design and Performance of Quantum Dot Light-emitting Diode Based on TiO<sub>2</sub> Modified Layer

Wei-wei LIU; You-chao KONG; Xiao-bo CHEN; Xiao-yan HU; Zhong-zheng MIAO

doi:10.37188/CJL.20220002

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Design and Performance of Quantum Dot Light-emitting Diode Based on TiO₂ Modified Layer

Device Fabrication and Physics | 更新时间：2022-04-07

- Design and Performance of Quantum Dot Light-emitting Diode Based on TiO₂ Modified Layer
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 3, Pages: 381-387(2022)
- 作者机构：
  
  盐城师范学院　物理与电子工程学院，江苏　盐城　224007
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61504118);Natural Science Foundation of Jiangsu Province(BK20201064);University Science Research Project of Jiangsu Province(19KJB430040)
- DOI：10.37188/CJL.20220002
  CLC： TN312.8
- Published：2022-03，
  
  Received：04 January 2022，
  
  Revised：17 January 2022，
扫描看全文
Wei-wei LIU, You-chao KONG, Xiao-bo CHEN, et al. Design and Performance of Quantum Dot Light-emitting Diode Based on TiO₂ Modified Layer. [J]. Chinese Journal of Luminescence 43(3):381-387(2022)
DOI：

Wei-wei LIU, You-chao KONG, Xiao-bo CHEN, et al. Design and Performance of Quantum Dot Light-emitting Diode Based on TiO₂ Modified Layer. [J]. Chinese Journal of Luminescence 43(3):381-387(2022) DOI： 10.37188/CJL.20220002.

摘要

量子点发光二极管(QLEDs)具有色饱和度和色纯度高等优点，在照明与显示领域具有广泛应用前景，成为发光领域研究的热点之一。由于器件采用多层结构，表面和界面问题成为制约QLEDs发展的一个棘手问题。本文使用原子层沉积技术在氧化锌(ZnO)电子传输层和量子点(QDs)发光层之间插入不同厚度的二氧化钛(TiO

)薄层，对ZnO和QDs发光层之间的界面进行修饰。发现插入0.270 nm的TiO

后，器件的漏电流降低约一个量级，激子的平均寿命从15.94 ns增加到16.61 ns，说明插入TiO

修饰层可以有效降低QDs发光层中激子猝灭，从而提高器件在低驱动电压下的电流效率(约提高15%)。上述结果有望为QLEDs在照明和显示领域的产业化提供参考。

Abstract

Due to high color saturation and high color purity

quantum dot(QD) light-emitting diodes(QLEDs) have become one of the hotspots in LEDs research for their potential application in lighting and display. Surface and interface issues have become a thorny issue which restricting the development of QLEDs with multilayer structure. In this paper

the interface between electron transport layer zinc oxide(ZnO) and QDs emitting layer was modified by inserting titanium dioxide(TiO

) layers with different thickness based on atomic layer deposition(ALD) technology. After inserting 0.270 nm TiO

modified layer

the leakage current of the QLEDs was significantly reduced about an order of magnitude

and the average lifetime of the excitons increased from 15.94 ns to 16.61 ns

indicating that the insertion of the TiO

modified layer can effectively prevent the exciton quenching in QDs emitting layer

thereby enhancing the current efficiency of the QLEDs under low driving voltage(about increased 15%). The above results are expected to provide a reference for the industrialization of QLEDs in the field of lighting and display.

关键词

量子点发光二极管二氧化钛界面修饰

Keywords

quantum dotlight-emitting diodesTiO2interface modification

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Related Institution

Department of Physics and Electronic Engineering， Yancheng Teachers University

Key Laboratory of Interface Science and Engineering in Advanced Materials， Ministry of Education， Taiyuan University of Technology

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Design and Performance of Quantum Dot Light-emitting Diode Based on TiO2 Modified Layer

DOI：10.37188/CJL.20220002

摘要

Abstract

关键词

Keywords

references

Design and Performance of Quantum Dot Light-emitting Diode Based on TiO₂ Modified Layer