Amplification in E Band Based on Highly Phosphorus and Bismuth Co-doped Silica Fiber

Meng-ting GUO; Jin-min TIAN; Fan WANG; Qiu-bai YANG; Chong-yun SHAO; Meng WANG; Lei ZHANG; Shu-zhen CUI; Chun-lei YU; Li-li HU

doi:10.37188/CJL.20210409

您当前的位置：

首页 >

文章列表页 >

Amplification in E Band Based on Highly Phosphorus and Bismuth Co-doped Silica Fiber

Research Letter | 更新时间：2022-04-20

- Amplification in E Band Based on Highly Phosphorus and Bismuth Co-doped Silica Fiber
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 4, Pages: 478-481(2022)
- 作者机构：
  
  1.中国科学院上海光学精密机械研究所　强激光材料重点实验室，上海　201800
  2.中国科学技术大学，安徽　合肥　230026
  3.中国科学院大学，北京　100049
  4.国科大杭州高等研究院，浙江　杭州　310024
- 作者简介：
- 基金信息：
  
  National Key R&D Program of China(2020YFB1805900)
- DOI：10.37188/CJL.20210409
  CLC： TN253
- Published：01 April 2022，
  
  Received：24 December 2021，
  
  Revised：14 January 2022，
扫描看全文
Meng-ting GUO, Jin-min TIAN, Fan WANG, et al. Amplification in E Band Based on Highly Phosphorus and Bismuth Co-doped Silica Fiber. [J]. Chinese Journal of Luminescence 43(4):478-481(2022)
DOI：

Meng-ting GUO, Jin-min TIAN, Fan WANG, et al. Amplification in E Band Based on Highly Phosphorus and Bismuth Co-doped Silica Fiber. [J]. Chinese Journal of Luminescence 43(4):478-481(2022) DOI： 10.37188/CJL.20210409.

摘要

采用改进的化学气相沉积技术结合液相掺杂工艺制备了低损耗Bi掺杂高磷石英基光纤，P

摩尔分数高达7.2%，光纤的背景损耗为18 dB/km@1 550 nm。进一步采用1 240 nm的可调谐拉曼激光器泵浦自制Bi掺杂高磷石英基光纤，在1 355~1 380 nm波段实现净增益，在1 355 nm波长处的最高增益为5.14 dB。这是国内首次制备出低损耗掺铋高磷石英基光纤，并基于该掺铋光纤实现了近红外波段的净增益放大。

Abstract

The low-loss bismuth- and highly phosphorous-co-doped silica fiber(BPDF) was prepared by the modified chemical vapor deposition technology combined with the solution doping method

where the mole fraction of phosphorous was as high as 7.2% and the background loss was 18 dB/km@1 550 nm. We used the tunable Raman laser operating at ~1 240 nm to pump the homemade BPDF

and achieved a broadband amplification in the range of 1 355 nm to 1 380 nm. The proposed BPDF amplifier provided the maximum gain of 5.18 dB at 1 355 nm. To our knowledge

this is the first report on the realization of low-loss BPDF fabrication

and the broadband amplification in the near-infrared band using the homemade BPDF in China.

关键词

Bi掺杂高磷石英基光纤宽带放大光纤光学

Keywords

highly phosphorus and bismuth co-doped silica fiberbroadband amplifierfiber optics

references

FUJIMOTO Y, NAKATSUKA M. Infrared luminescence from bismuth-doped silica glass: optical properties of condensed matter [J]. Jpn. J. Appl. Phys., 2001, 40(3B):L279-L281.

THIPPARAPU N K, WANG Y, WANG S, et al. Bi-doped fiber amplifiers and lasers [J]. Opt. Mater. Express, 2019, 9(6):2446-2465.

WANG Y, THIPPARAPU N K, RICHARDSON D J, et al. Ultra-broadband bismuth-doped fiber amplifier covering a 115-nm bandwidth in the O and E bands [J]. J. Lightwave Technol., 2021, 39(3):795-800.

DIANOV E M, BUFETOV I A. Progress in bismuth-doped silica-based fiber lasers and amplifiers [C]. Proceedings of the 2012 Asia Communications and Photonics Conference, Guangzhou, 2012:1-3.

KHEGAI A, OSOSKOV Y, FIRSTOV S, et al. O-band bismuth-doped fiber amplifier with 67 nm bandwidth [C]. Proceedings of the 2020 Optical Fiber Communications Conference and Exhibition, San Diego, 2020:1-3.

WANG Y, THIPPARAPU N K, RICHARDSON D J, et al. High gain Bi-doped fiber amplifier operating in the E-band with a 3-dB bandwidth of 40 nm [C]. Proceedings of 2021 Optical Fiber Communications Conference and Exhibition, San Francisco, 2021:1-3.

FIRSTOV S V, KHEGAI A M, KHARAKHORDIN A V, et al. Compact and efficient O-band bismuth-doped phosphosilicate fiber amplifier for fiber-optic communications [J]. Sci. Rep., 2020, 10(1):11347-1-9.

TAENGNOI N, BOTTRILL K R H, HONG Y, et al. Experimental characterization of an O-band bismuth-doped fiber amplifier [J]. Opt. Express, 2021, 29(10):15345-15355.

PENG M Y, QIU J R, CHEN D P, et al. Bismuth- and aluminum-codoped germanium oxide glasses for super-broadband optical amplification [J]. Opt. Lett., 2004, 29(17):1998-2000.

MENG X G, PENG M Y, CHEN D P, et al. Broadband infrared luminescence of bismuth-doped borosilicate glasses [J]. Chin. Phys. Lett., 2005, 22(3):615-617.

ZHENG Z X, PAN X P, JI W Z, et al. Broad spectrum characteristics of Bi/Er co-doped silica optical fiber in C-band [C]. Proceedings of 2021 19th International Conference on Optical Communications and Networks, Qufu, 2021:1-3.

ZENG L Z, WEN J X, YANG L, et al. C+L band light sources based on Bi/Er/La co-doped silica fibers [C]. Proceedings of 2021 19th International Conference on Optical Communications and Networks, Qufu, 2021:1-3.

周时凤, 阮健, 邱建荣. 铋掺杂玻璃的红外发光机理和宽带光放大 [J]. 激光与光电子学进展, 2009, 46(2):36.

ZHOU S F, RUAN J, QIU J R. Infrared luminescence mechanism and broadband optical amplification of bismuth-doped glass [J]. Laser Optoelectron. Prog., 2009, 46(2):36. (in Chinese)

王岩山, 蒋作文, 栾怀训, 等. 双包层掺Bi光纤的制备及其光谱特性研究 [J]. 物理学报, 2021, 61(8):084215-1-5.

WANG Y S, JIANG Z W, LUAN H X, et al. Preparation and spectral characteristics of Bi-doped double cladding fiber [J]. Acta Phys. Sinica, 2012, 61(8):084215-1-5. (in Chinese)

LUO Y H, YAN B B, ZHANG J Z, et al. Development of Bi/Er co-doped optical fibers for ultra-broadband photonic applications [J]. Front. Optoelectron., 2018, 11(1):37-52.

Views

309

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Optimal Design and Simulation of High Power Tm³⁺ Self-similar Pulse Laser

Polarization Properties of Multi-hole Core Photonic Crystal Fiber

Gain Study of CdSe/CdS/ZnS Quantum Dots Doped Fiber

Dispersion Property of Photonic Quasicrystal Fibers

Related Author

Lili HU

Chunlei YU

Shuzhen CUI

Lei ZHANG

Meng WANG

Chongyun SHAO

Qiubai YANG

Fan WANG

Related Institution

Key Laboratory of Materials for High Power Laser， Shanghai Institute of Optics and Fine Mechanics， C hinese Academy of Sciences

Hangzhou Institute for Advanced Study， University of Chinese Academy of Sciences

Key Laboratory of All Optical Network and Advanced Telecommunication Network of Ministry of Education, Institute of Lightwave Technology, Beijing Jiaotong University

Measurement Technology and Instrumentation Key Lab of Hebei Province, State Key Lab of Metastable Materials Science and Technology, Yanshan University

Department of Science, Changchun University of Science and Technology

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰