β-Ga<sub>2</sub>O<sub>3</sub> Bulk Films Prepared by Thermal Oxidation of GaAs

Zhao-ti DIAO; Wei CHEN; Xin DONG; Teng JIAO; Zheng-da LI

doi:10.37188/CJL.20210399

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β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs

Synthesis and Properties of Materials | 更新时间：2022-08-01

- β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 7, Pages: 1095-1101(2022)
- 作者机构：
  
  吉林大学电子科学与工程学院集成光电子学国家重点联合实验室，吉林长春　130012
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61774072)
- DOI：10.37188/CJL.20210399
  CLC： O482.31
- Published：05 July 2022，
  
  Received：20 December 2021，
  
  Revised：05 January 2022，
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刁肇悌,陈威,董鑫等.砷化镓热氧化法制备β⁃Ga₂O₃体块薄膜[J].发光学报,2022,43(07):1095-1101.

DIAO Zhao-ti,CHEN Wei,DONG Xin,et al.β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs[J].Chinese Journal of Luminescence,2022,43(07):1095-1101.
刁肇悌,陈威,董鑫等.砷化镓热氧化法制备β⁃Ga₂O₃体块薄膜[J].发光学报,2022,43(07):1095-1101. DOI： 10.37188/CJL.20210399.

DIAO Zhao-ti,CHEN Wei,DONG Xin,et al.β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs[J].Chinese Journal of Luminescence,2022,43(07):1095-1101. DOI： 10.37188/CJL.20210399.

摘要

通过对p型砷化镓（p⁃GaAs）单晶衬底高温热氧化方法制备了β⁃Ga

体块薄膜。探讨了高温氧化过程中O

流量对β⁃Ga

体块薄膜形貌的影响。通过对体块薄膜的晶体质量、结构特性、光致发光特性的测试分析，可以发现在高温高氧环境下GaAs转变为β⁃Ga

体块薄膜的过程与Langmuir蒸发相关。当O

流量较低时（0.2 L/min），GaAs衬底处于缺氧状态，所制备样品呈现纳米线状形貌；而当通入O

流量超过0.4 L/min时，GaAs衬底被完全氧化为具有纳米岛状结构的β⁃Ga

体块薄膜，且晶体质量得到显著提高。本文提出的砷化镓单晶热氧化工艺可以高效、低成本地获得较高结晶质量的纳米结构β⁃Ga

体块薄膜，对于β⁃Ga

材料的应用具有极大的丰富作用。

Abstract

In this paper， β-Ga

bulk films were prepared by high-temperature thermal oxidation of p-type gallium arsenide （p-GaAs） single crystal substrate. The effect of O

flow rate on the morphology of β-Ga

bulk films was also discussed. By testing and analysing the crystal quality， structural characteristics and photoluminescence characteristics of the bulk films， we found that the transformation of GaAs into β-Ga

bulk films was related to Langmuir evaporation. When the O

flow rate was low（0.2 L/min）， GaAs substrate was in anoxic state， and the prepared samples showed nanolinear morphology. However， when the flow rate of O

exceeds 0.4 L/min， GaAs substrate is completely oxidized into β-Ga

bulk film with nanometer island structure， and the crystal quality is significantly improved. The thermal oxidation process based on the GaAs single crystal proposed in this article can obtain nano-structured β-Ga

bulk films of high crystal quality with high efficiency and low cost. This process enriches the application of β-Ga

materials greatly.

关键词

热氧化纳米岛状体块薄膜β-Ga2O3氧气流量

Keywords

thermal oxidationnano island bulk filmβ-Ga2O3oxygen flow rate

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Related Author

Teng JIAO

Zheng-da LI

Xin DONG

Wei CHEN

Zhao-ti DIAO

XIAO Zhi-yan

ZHANG Wei-li

ZHANG Xi-tian

Related Institution

State Key Laboratory on Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University

Department of Physics, Harbin Normal University

Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Institute of Theoretical Physics, Northeast Normal University

Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

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β-Ga2O3 Bulk Films Prepared by Thermal Oxidation of GaAs

DOI：10.37188/CJL.20210399

摘要

Abstract

关键词

Keywords

references

β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs