β-Ga<sub>2</sub>O<sub>3</sub> Bulk Films Prepared by Thermal Oxidation of GaAs

Zhao-ti DIAO; Wei CHEN; Xin DONG; Teng JIAO; Zheng-da LI

doi:10.37188/CJL.20210399

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β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs

Synthesis and Properties of Materials | 更新时间：2022-08-01

- β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 7, Pages: 1095-1101(2022)
- 作者机构：
  
  1.吉林大学电子科学与工程学院集成光电子学国家重点联合实验室，吉林长春　130012
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61774072)
- DOI：10.37188/CJL.20210399
  CLC：
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Zhao-ti DIAO, Wei CHEN, Xin DONG, et al. β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs. [J]. Chinese Journal of Luminescence 43(7):1095-1101(2022)
DOI：

Zhao-ti DIAO, Wei CHEN, Xin DONG, et al. β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs. [J]. Chinese Journal of Luminescence 43(7):1095-1101(2022) DOI： 10.37188/CJL.20210399.

摘要

通过对p型砷化镓（p⁃GaAs）单晶衬底高温热氧化方法制备了β⁃Ga,2,O,3,体块薄膜。探讨了高温氧化过程中O,2,流量对β⁃Ga,2,O,3,体块薄膜形貌的影响。通过对体块薄膜的晶体质量、结构特性、光致发光特性的测试分析，可以发现在高温高氧环境下GaAs转变为β⁃Ga,2,O,3,体块薄膜的过程与Langmuir蒸发相关。当O,2,流量较低时（0.2 L/min），GaAs衬底处于缺氧状态，所制备样品呈现纳米线状形貌；而当通入O,2,流量超过0.4 L/min时，GaAs衬底被完全氧化为具有纳米岛状结构的β⁃Ga,2,O,3,体块薄膜，且晶体质量得到显著提高。本文提出的砷化镓单晶热氧化工艺可以高效、低成本地获得较高结晶质量的纳米结构β⁃Ga,2,O,3,体块薄膜，对于β⁃Ga,2,O,3,材料的应用具有极大的丰富作用。

Abstract

In this paper， β-Ga,2,O,3, bulk films were prepared by high-temperature thermal oxidation of p-type gallium arsenide （p-GaAs） single crystal substrate. The effect of O,2, flow rate on the morphology of β-Ga,2,O,3, bulk films was also discussed. By testing and analysing the crystal quality， structural characteristics and photoluminescence characteristics of the bulk films， we found that the transformation of GaAs into β-Ga,2,O,3, bulk films was related to Langmuir evaporation. When the O,2 ,flow rate was low（0.2 L/min）， GaAs substrate was in anoxic state， and the prepared samples showed nanolinear morphology. However， when the flow rate of O,2, exceeds 0.4 L/min， GaAs substrate is completely oxidized into β-Ga,2,O,3, bulk film with nanometer island structure， and the crystal quality is significantly improved. The thermal oxidation process based on the GaAs single crystal proposed in this article can obtain nano-structured β-Ga,2,O,3, bulk films of high crystal quality with high efficiency and low cost. This process enriches the application of β-Ga,2,O,3, materials greatly.

关键词

热氧化纳米岛状体块薄膜β-Ga2O3氧气流量

Keywords

thermal oxidationnano island bulk filmβ-Ga2O3oxygen flow rate

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β-Ga2O3 Bulk Films Prepared by Thermal Oxidation of GaAs

DOI：10.37188/CJL.20210399

摘要

Abstract

关键词

Keywords

references

β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs