β-Ga<sub>2</sub>O<sub>3</sub> Bulk Films Prepared by Thermal Oxidation of GaAs

Zhao-ti DIAO; Wei CHEN; Xin DONG; Teng JIAO; Zheng-da LI

doi:10.37188/CJL.20210399

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β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs

Synthesis and Properties of Materials | 更新时间：2022-08-01

- β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 7, Pages: 1095-1101(2022)
- 作者机构：
  
  吉林大学电子科学与工程学院集成光电子学国家重点联合实验室，吉林长春　130012
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61774072)
- DOI：10.37188/CJL.20210399
  CLC： O482.31
- Published：05 July 2022，
  
  Received：20 December 2021，
  
  Revised：05 January 2022，
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刁肇悌,陈威,董鑫等.砷化镓热氧化法制备β⁃Ga₂O₃体块薄膜[J].发光学报,2022,43(07):1095-1101.

DIAO Zhao-ti,CHEN Wei,DONG Xin,et al.β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs[J].Chinese Journal of Luminescence,2022,43(07):1095-1101.
刁肇悌,陈威,董鑫等.砷化镓热氧化法制备β⁃Ga₂O₃体块薄膜[J].发光学报,2022,43(07):1095-1101. DOI： 10.37188/CJL.20210399.

DIAO Zhao-ti,CHEN Wei,DONG Xin,et al.β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs[J].Chinese Journal of Luminescence,2022,43(07):1095-1101. DOI： 10.37188/CJL.20210399.

摘要

通过对p型砷化镓（p⁃GaAs）单晶衬底高温热氧化方法制备了β⁃Ga

体块薄膜。探讨了高温氧化过程中O

流量对β⁃Ga

体块薄膜形貌的影响。通过对体块薄膜的晶体质量、结构特性、光致发光特性的测试分析，可以发现在高温高氧环境下GaAs转变为β⁃Ga

体块薄膜的过程与Langmuir蒸发相关。当O

流量较低时（0.2 L/min），GaAs衬底处于缺氧状态，所制备样品呈现纳米线状形貌；而当通入O

流量超过0.4 L/min时，GaAs衬底被完全氧化为具有纳米岛状结构的β⁃Ga

体块薄膜，且晶体质量得到显著提高。本文提出的砷化镓单晶热氧化工艺可以高效、低成本地获得较高结晶质量的纳米结构β⁃Ga

体块薄膜，对于β⁃Ga

材料的应用具有极大的丰富作用。

Abstract

In this paper， β-Ga

bulk films were prepared by high-temperature thermal oxidation of p-type gallium arsenide （p-GaAs） single crystal substrate. The effect of O

flow rate on the morphology of β-Ga

bulk films was also discussed. By testing and analysing the crystal quality， structural characteristics and photoluminescence characteristics of the bulk films， we found that the transformation of GaAs into β-Ga

bulk films was related to Langmuir evaporation. When the O

flow rate was low（0.2 L/min）， GaAs substrate was in anoxic state， and the prepared samples showed nanolinear morphology. However， when the flow rate of O

exceeds 0.4 L/min， GaAs substrate is completely oxidized into β-Ga

bulk film with nanometer island structure， and the crystal quality is significantly improved. The thermal oxidation process based on the GaAs single crystal proposed in this article can obtain nano-structured β-Ga

bulk films of high crystal quality with high efficiency and low cost. This process enriches the application of β-Ga

materials greatly.

关键词

热氧化纳米岛状体块薄膜β-Ga2O3氧气流量

Keywords

thermal oxidationnano island bulk filmβ-Ga2O3oxygen flow rate

references

KIM S，ZHANG Y W，YUAN C，et al. Thermal management of β-Ga2O3 current aperture vertical electron transistors ［J］. IEEE Trans.Compon.，Packaging Manuf. Technol.， 2021，11（8）：1171-1176. doi: 10.1109/tcpmt.2021.3089321http://dx.doi.org/10.1109/tcpmt.2021.3089321

JESENOVEC J，WEBER M H，PANSEGRAU C，et al. Gallium vacancy formation in oxygen annealed β-Ga2O3 ［J］. J. Appl. Phys.， 2021，129（24）：245701-1-9. doi: 10.1063/5.0053325http://dx.doi.org/10.1063/5.0053325

COOKE J，SENSALE-RODRIGUEZ B，GHADBEIGI L. Methods for synthesizing β-Ga2O3 thin films beyond epitaxy ［J］. J. Phys. Photonics， 2021，3（3）：032005-1-16. doi: 10.1088/2515-7647/ac0db5http://dx.doi.org/10.1088/2515-7647/ac0db5

WANG Y H，LI H R，CAO J，et al. Ultrahigh gain solar blind avalanche photodetector using an amorphous Ga2O3-based heterojunction ［J］. ACS Nano， 2021，15（10）：16654-16663. doi: 10.1021/acsnano.1c06567http://dx.doi.org/10.1021/acsnano.1c06567

郭道友，李培刚，陈政委，等. 超宽禁带半导体β-Ga2O3及深紫外透明电极、日盲探测器的研究进展［J］. 物理学报， 2019，68（7）：078501-1-36. doi: 10.7498/aps.68.20181845http://dx.doi.org/10.7498/aps.68.20181845

GUO D Y，LI P G，CHEN Z W，et al. Ultra-wide bandgap semiconductor of β-Ga2O3 and its research progress of deep ultraviolet transparent electrode and solar-blind photodetector ［J］. Acta Phys. Sinica， 2019，68（7）：078501-1-36. （in Chinese）. doi: 10.7498/aps.68.20181845http://dx.doi.org/10.7498/aps.68.20181845

XING Y H，ZHANG Y，HAN J，et al. Research of nanopore structure of Ga2O3 film in MOCVD for improving the performance of UV photoresponse ［J］. Nanotechnology， 2021，32（9）：095301-1-8. doi: 10.1088/1361-6528/abc4a2http://dx.doi.org/10.1088/1361-6528/abc4a2

ZHANG J H，JIAO S J，WANG D B，et al. Nano tree-like branched structure with α-Ga2O3 covered by γ-Al2O3 for highly efficient detection of solar-blind ultraviolet light using self-powered photoelectrochemical method ［J］. Appl. Surf. Sci.， 2021，541：148380-1-8. doi: 10.1016/j.apsusc.2020.148380http://dx.doi.org/10.1016/j.apsusc.2020.148380

DE MELO R P JR，OLIVEIRA N T C，DOMINGUEZ C T，et al. Urchin-like artificial gallium oxide nanowires grown by a novel MOCVD/CVD-based route for random laser application ［J］. J. Appl. Phys.， 2016，119（16）：163107-1-9. doi: 10.1063/1.4947290http://dx.doi.org/10.1063/1.4947290

LI J S，ZHANG X D，CAO X，et al. Self-catalyzed metal organic chemical vapor deposition growth of vertical β-Ga2O3 nanowire arrays ［J］. Nanotechnology， 2020，31（2）：02LT01-1-6. doi: 10.1088/1361-6528/ab4774http://dx.doi.org/10.1088/1361-6528/ab4774

ALHALAILI B，VIDU R，MAO H，et al. Comparative study of growth morphologies of Ga2O3 nanowires on different substrates ［J］. Nanomaterials， 2020，10（10）：1920-1-11. doi: 10.3390/nano10101920http://dx.doi.org/10.3390/nano10101920

LEONTIE L，SPRINCEAN V，UNTILA D，et al. Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate ［J］. Thin Solid Films， 2019，689：137502-1-6. doi: 10.1016/j.tsf.2019.137502http://dx.doi.org/10.1016/j.tsf.2019.137502

PATIL-CHAUDHARI D，OMBABA M，OH J Y，et al. Solar blind photodetectors enabled by nanotextured β-Ga2O3 films grown via oxidation of GaAs substrates ［J］. IEEE Photonics J.， 2017，9（2）：2300207-1-10. doi: 10.1109/jphot.2017.2688463http://dx.doi.org/10.1109/jphot.2017.2688463

HE T，ZHAO Y K，ZHANG X D，et al. Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction ［J］. Nanophotonics， 2018，7（9）：1557-1562. doi: 10.1515/nanoph-2018-0061http://dx.doi.org/10.1515/nanoph-2018-0061

LI Y B，TOKIZONO T，LIAO M Y，et al. Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection ［J］. Adv. Funct. Mater.， 2010， 20（22）：3972-3978. doi: 10.1002/adfm.201001140http://dx.doi.org/10.1002/adfm.201001140

FILIPPO E，SICILIANO M，GENGA A，et al. Single crystalline β-Ga2O3 nanowires synthesized by thermal oxidation of GaSe layer ［J］. Mater. Res. Bull.， 2013，48（5）：1741-1744. doi: 10.1016/j.materresbull.2012.08.083http://dx.doi.org/10.1016/j.materresbull.2012.08.083

ALHALAILI B，MAO H，DRYDEN D M，et al. Influence of silver as a catalyst on the growth of β-Ga2O3 nanowires on GaAs ［J］. Materials， 2020，13（23）：5377-1-14. doi: 10.3390/ma13235377http://dx.doi.org/10.3390/ma13235377

KORBUTOWICZ R，STAFINIAK A，SERAFIŃCZUK J. Ga2O3 nanowires preparation at atmospheric pressure ［J］. Mater. Sci.-Pol.， 2017，35（2）：412-420. doi: 10.1515/msp-2017-0026http://dx.doi.org/10.1515/msp-2017-0026

ZHOU Z Y，ZHENG C X，TANG W X，et al. Congruent evaporation temperature of GaAs（001） controlled by As flux ［J］. Appl. Phys. Lett.， 2010，97（12）：121912-1-3. doi: 10.1063/1.3491552http://dx.doi.org/10.1063/1.3491552

DING Y，GAO P X，WANG Z L. Catalyst-nanostructure interfacial lattice mismatch in determining the shape of VLS grown nanowires and nanobelts：acase of Sn/ZnO ［J］. J. Am. Chem. Soc.， 2004，126（7）：2066-2072. doi: 10.1021/ja039354rhttp://dx.doi.org/10.1021/ja039354r

CHEN W，JIAO T，LI Z M，et al. Preparation of β-Ga2O3 nanostructured films by thermal oxidation of GaAs substrate ［J］. Ceram. Int.， 2022，48（4）：5698-5703. doi: 10.1016/j.ceramint.2021.11.115http://dx.doi.org/10.1016/j.ceramint.2021.11.115

KRANERT C，STURM C，SCHMIDT-GRUND R，et al. Raman tensor elements of β-Ga2O3 ［J］. Sci. Rep.， 2016，6（1）：35964-1-9. doi: 10.1038/srep35964http://dx.doi.org/10.1038/srep35964

MACHON D，MCMILLAN P F，XU B，et al. High-pressure study of the β-to-α transition in Ga2O3 ［J］.Phys. Rev. B， 2006，73（9）：094125-1-9. doi: 10.1103/physrevb.73.094125http://dx.doi.org/10.1103/physrevb.73.094125

WAN K，YOUNG J F. Interaction of longitudinal-optic phonons with free holes as evidenced in Raman spectra from Be-doped p-type GaAs ［J］. Phys. Rev. B， 1990，41（15）：10772-10779. doi: 10.1103/physrevb.41.10772http://dx.doi.org/10.1103/physrevb.41.10772

伍林，欧阳兆辉，曹淑超，等. 拉曼光谱技术的应用及研究进展［J］. 光散射学报， 2005，17（2）：180-186. doi: 10.3969/j.issn.1004-5929.2005.02.013http://dx.doi.org/10.3969/j.issn.1004-5929.2005.02.013

WU L，OUYANG Z H，CAO S C，et al. Research development and application of Raman scattering technology ［J］. Chin. J. Light Scattering， 2005，17（2）：180-186. （in Chinese）. doi: 10.3969/j.issn.1004-5929.2005.02.013http://dx.doi.org/10.3969/j.issn.1004-5929.2005.02.013

马腾宇，李万俊，何先旺，等. β-Ga2O3纳米材料的尺寸调控与光致发光特性［J］. 物理学报， 2020，69（10）：108102-1-11. doi: 10.7498/aps.69.20200158http://dx.doi.org/10.7498/aps.69.20200158

MA T Y，LI W J，HE X W，et al. Size regulation and photoluminescence propertiesof β-Ga2O3 nanomaterials ［J］. Acta Phys. Sinica， 2020，69（10）：108102-1-11. （in Chinese）. doi: 10.7498/aps.69.20200158http://dx.doi.org/10.7498/aps.69.20200158

HU D Q，ZHUANG S W，DONG X，et al. Growth and properties of one-dimensional β-Ga2O3 nanostructures on c-plane sapphire substrates ［J］. Mater. Sci. Semicond. Process.， 2018，75：31-35. doi: 10.1016/j.mssp.2017.11.018http://dx.doi.org/10.1016/j.mssp.2017.11.018

FRODASON Y K，JOHANSEN K M，VINES L，et al. Self-trapped hole and impurity-related broad luminescence in β-Ga2O3 ［J］. J. Appl. Phys.， 2020，127（7）：075701-1-9. doi: 10.1063/1.5140742http://dx.doi.org/10.1063/1.5140742

HO Q D，FRAUENHEIM T，DEÁK P. Origin of photoluminescence in β-Ga2O3 ［J］. Phys. Rev. B， 2018，97（11）：115163-1-4. doi: 10.1103/physrevb.97.115163http://dx.doi.org/10.1103/physrevb.97.115163

冯艳彬. 蓝宝石衬底上氧化镓薄膜的生长与退火研究［D］. 大连：大连理工大学， 2014.

FENG Y B. Growth and Annealing Study of Gallium Oxide Films on Sapphire Substrates ［D］. Dalian：Dalian University of Technology， 2014. （in Chinese）

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Related Author

Teng JIAO

Zheng-da LI

Xin DONG

Wei CHEN

Zhao-ti DIAO

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WANG Dongbo

GAO Shiyong

Related Institution

State Key Laboratory on Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University

School of Materials Science and Engineering， Harbin Institute of Technology

Department of Physics, Harbin Normal University

Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Institute of Theoretical Physics, Northeast Normal University

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β-Ga2O3 Bulk Films Prepared by Thermal Oxidation of GaAs

DOI：10.37188/CJL.20210399

摘要

Abstract

关键词

Keywords

references

β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs