Numerical Simulation on Output Characteristics of 980 nm Tapered Semiconductor Lasers

Zhi-hao WANG; Jing-hui WANG; Shuai-nan LIU; Yue ZHANG; Peng SU; Xin GAO; Bao-xue BO

doi:10.37188/CJL.20210376

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Numerical Simulation on Output Characteristics of 980 nm Tapered Semiconductor Lasers

Theoretical Calculation and Spectral Analysis | 更新时间：2022-02-25

- Numerical Simulation on Output Characteristics of 980 nm Tapered Semiconductor Lasers
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 2, Pages: 275-284(2022)
- 作者机构：
  
  . 长春理工大学　高功率半导体激光国家重点实验室，吉林　长春　130022
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61774024);Science and Technology Development Plan of Jilin Province(20190302007GX;20200501008GS)
- DOI：10.37188/CJL.20210376
  CLC： TN248.4
- Published：2022-02，
  
  Received：26 November 2021，
  
  Revised：19 December 2021，
扫描看全文
Zhi-hao WANG, Jing-hui WANG, Shuai-nan LIU, et al. Numerical Simulation on Output Characteristics of 980 nm Tapered Semiconductor Lasers. [J]. Chinese Journal of Luminescence 43(2):275-284(2022)
DOI：

Zhi-hao WANG, Jing-hui WANG, Shuai-nan LIU, et al. Numerical Simulation on Output Characteristics of 980 nm Tapered Semiconductor Lasers. [J]. Chinese Journal of Luminescence 43(2):275-284(2022) DOI： 10.37188/CJL.20210376.

摘要

具有高功率及高亮度激光特性的锥形半导体激光器在激光加工、自由空间通信、医疗等领域具有广泛的应用前景。本文基于广角差分光束传播法(WA-FD-BPM)，对980 nm锥形半导体激光器进行了仿真模拟，详细分析了不同结构参数(脊形区刻蚀深度、锥形角度、不同脊形区/锥形区长度比、锥形区刻蚀深度、前腔面反射率)对器件光束质量和

P-I-V

特性的影响。分析认为，锥形区波导的几何损耗是导致器件斜率效率降低的主要因素，光泵浦效应是影响锥形激光器光束质量变差的重要因素，可通过降低器件的前腔面反射率来改善光束质量。研究结果可为锥形激光器的性能优化提供参考。

Abstract

Tapered semiconductor lasers with high power and high brightness characteristics have been extensively used in many fields such as laser processing

free space communications

and medical

etc

. A simulation on 980 nm tapered semiconductor lasers has been done based on the wide-angle differential beam propagation method(WA-FD-BPM) in this work. The effects of structural parameters(such as ridge etching depth

taper angle

different ridge/taper length ratio

taper etching depth

front cavity reflectance) on the beam quality and

P-I-V

characteristics of the device are analyzed in detail. The analysis shows that the geometric loss of the tapered waveguide is the main factor leading to the decrease of the slope efficiency of the device

and the optical pumping effect is an important factor affecting the deterioration of the beam quality. The beam quality can be improved by reducing the reflectivity of the front cavity surface of the device. The results in this paper can provide a certain theoretical reference for the design and analysis of tapered lasers.

关键词

锥形半导体激光器广角差分光束传播法光束质量光场分布

Keywords

tapered semiconductor laserwide-angle differential beam propagationbeam qualityoptical field distribution

references

陈良惠, 杨国文, 刘育衔. 半导体激光器研究进展[J]. 中国激光, 2020, 47(5):0500001-1-19.

CHEN L H, YANG G W, LIU Y X. Development of semiconductor lasers[J]. Chin. J. Lasers, 2020, 47(5):0500001-1-19. (in Chinese)

刘国军, 薄报学, 曲轶, 等. 高功率半导体激光器技术发展与研究[J]. 红外与激光工程, 2007, 36(S1):272-274.

LIUG J, BO B X, QU Y, et al. High power semiconductor lasers[J]. Infrared Laser Eng., 2007, 36(S1):272-274. (in Chinese)

王立军, 宁永强, 秦莉, 等. 大功率半导体激光器研究进展[J]. 发光学报, 2015, 36(1):1-19.

WANG L J, NING Y Q, QIN L, et al. Development of high power diode laser[J]. Chin. J. Lumin., 2015, 36(1):1-19. (in Chinese)

胡雪莹, 董海亮, 贾志刚, 等. GaAs基980 nm高功率半导体激光器的研究进展[J]. 人工晶体学报, 2021, 50(2):381-390.

HU X Y, DONG H L, JIA Z G, et al. Research progress of GaAs based 980 nm high power semiconductor lasers[J]. J. Synthet. Cryst., 2021, 50(2):381-390. (in Chinese)

BENDELLI G, KOMORI K, ARAI S. Gain saturation and propagation characteristics of index-guided tapered-waveguide traveling-wave semiconductor laser amplifiers(TTW-SLAs)[J]. IEEE J. Quant. Electr., 1992, 28(2):447-458.

WALPOLE J N, KINTZER E S, CHINN S R, et al. High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier[J]. Appl. Phys. Lett., 1992, 61(7):740.

WALPOLE J N. Semiconductor amplifiers and lasers with tapered gain regions[J]. Opt. Quant. Electr., 1996, 28(6):623-645

O’BRIEN S, SCHOENFELDER A, LANG R J. 5-W CW diffraction-limited InGaAs broad-area flared amplifier at 970 nm[J]. Photon. Technol. Lett. IEEE, 1997, 9(9):1217-1219.

KINTZER E S, WALPOLE J N, CHINN S R, et al. High-power strained-layer tapered traveling wave amplifier[C]. Optical Fiber Communication Conference, San Jose, California, 1992: 44.

KINTZER E S, WALPOLE J N, CHINN S R, et al. High-power, strained-layer amplifiers and lasers with tapered gain regions[J]. IEEE Photon. Technol. Lett., 1993, 5(6):605-608.

SUJECKI S, BORRUEL L, WYKES J, et al. Nonlinear properties of tapered laser cavities[J]. IEEE J. Select. Top. Quant. Electr., 2003, 9(3):823-834.

BORRUEL L, SUJECKI S, MORENO P, et al. Quasi-3-D simulation of high-brightness tapered lasers[J]. IEEE J. Quant. Electr., 2004, 40(5):463-472.

HADLEY R G. Multistep method for wide-angle beam propagation[J]. Opt. Lett., 1992, 17(24):1743.

SELBERHERR S. Analysis and Simulation of Semiconductor Devices[M]. Wien: Springer-Verlag, 1984.

KOCH T B, DAVIES J B, WICKRAMASINGHE D. Finite element/finite difference propagation algorithm for integrated optical device[J]. Electr. Lett., 1989, 25(8):514-516.

孙胜明. 976 nm锥形半导体激光器技术研究[D]. 长春: 长春理工大学, 2018.

SUN S M. Study on 976 nm Tapered Semiconductor Laser Technology[D]. Changchun: Changchun University of Science and Technology, 2018. (in Chinese)

DELEPINE S, GERARD F, PINQUIER A, et al. How to launch 1 W into single-mode fiber from a single 1.48-μm flared resonator[J]. IEEE J. Select. Top. Quant. Electr., 2001, 7(2):111-123.

HELAL M A, NYIRENDA-KAUNGA S N, BULL S, et al. Beam quality degradation processes in tapered lasers and DBR tapered lasers[C]. 2017 IEEE High Power Diode Lasers and Systems Conference (HPD), Coventry, UK, 2017: 25-26.

袁庆贺, 井红旗, 刘素平, 等. 导波模式对锥形半导体激光器输出特性的影响[J]. 中国激光, 2021, 48(9):0901001-1-9.

YUAN Q H, JING H Q, LIU S P, et al. Influence of guided wave mode on output characteristics of tapered diode laser[J]. Chin. J. Lasers, 2021, 48(9):0901001-1-9. (in Chinese)

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