Liang GUO, Ya-nan GUO, Jian-kun YANG, et al. Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes. [J]. Chinese Journal of Luminescence 43(1):1-7(2022)
Liang GUO, Ya-nan GUO, Jian-kun YANG, et al. Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes. [J]. Chinese Journal of Luminescence 43(1):1-7(2022) DOI： 10.37188/CJL.20210331.
Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes增强出版
AlGaN-based deep ultraviolet LED has attracted more and more attention in ultraviolet communication due to its high modulation bandwidth and small chip size. In this study,AlGaN-based deep ultraviolet LEDs with varied Al composition of 50%, 55%, 60% in quantum barriers are fabricated. The effect of barrier height on the photoelectric and modulation characteristics of deep ultraviolet LEDs is studied. It is found that the optical power and external quantum efficiency (EQE) of the deep ultraviolet LED increase first and then decreased, and carrier lifetime decreases first and then increases as the quantum barrier height increases. The peak wavelength of the spectra shows a blue-shift. APSYS simulation revealed that the spacial overlap between the wave function of electron and hole is enhanced as Al composition increases. But further increase on barrier height will lead to current leakage which reduces the radiation recombination rate and carrier density in multi-quantum well layer. The -3 dB bandwidth of deep ultraviolet LED with 55% Al composition in quantum barrier is measured to be 94.4 MHz, higher than those with 50% and 60% Al composition in quantum barrier.
ultraviolet communicationdeep ultraviolet light-emitting diodesmultiple-quantum-well layermodulation bandwidthoptical power
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