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High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window
Device Fabrication and Physics | 更新时间:2022-01-14
    • High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window

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    • Chinese Journal of Luminescence   Vol. 43, Issue 1, Pages: 110-118(2022)
    • DOI:10.37188/CJL.20210306    

      CLC: TP248.4;TH314+.3
    • Published:2022-01

      Received:22 September 2021

      Revised:11 October 2021

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  • Cui-cui LIU, Nan LIN, Xiao-yu MA, et al. High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window. [J]. Chinese Journal of Luminescence 43(1):110-118(2022) DOI: 10.37188/CJL.20210306.

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Cui-cui LIU
Nan LIN
Xiao-yu MA
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Su-ping LIU
TIAN Wei-nan
XIONG Cong
WANG Xin

Related Institution

Institute of Nuclear Physics, China Institute of Atomic Energy
National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, CAS
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