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Uniformity of Light Emission in Micro-area on Mesa of High-power Flip-chip LED Devices with Ceramic Packaging
增强出版- Chinese Journal of Luminescence Vol. 42, Issue 9, Pages: 1436-1445(2021)
- 作者机构：
1.闽南师范大学 物理与信息工程学院，福建 漳州 363000
- 作者简介：
- 基金信息：National Natureal Science Foundation of China(51072076);Industry-University Cooperation Project of Fujian Provincial Department of Science and Technology(2018H6015);Cultivation Program for Innovation Team in University of Fujian(201821)
DOI：10.37188/CJL.20210199
CLC：
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Xiao-zhen LI, Chuan-bing XIONG, Ying-wen TANG, et al. Uniformity of Light Emission in Micro-area on Mesa of High-power Flip-chip LED Devices with Ceramic Packaging. [J]. Chinese Journal of Luminescence 42(9):1436-1445(2021)
Xiao-zhen LI, Chuan-bing XIONG, Ying-wen TANG, et al. Uniformity of Light Emission in Micro-area on Mesa of High-power Flip-chip LED Devices with Ceramic Packaging. [J]. Chinese Journal of Luminescence 42(9):1436-1445(2021) DOI： 10.37188/CJL.20210199.
摘要
高功率密度的陶瓷封装LED器件在大电流工作时，其顶面发光均匀性是该类器件的关键指标。本文在3.5 mm×3.5 mm的氮化铝陶瓷基板上金锡共晶了1.905 mm×1.830 mm(75 mil×72 mil)的LED倒装蓝光大功率芯片，然后分别制作成蓝光器件和白光器件，并分别对器件顶面的微区发光均匀性进行了研究。结果表明，蓝光器件在电流<3 A时，其顶面光强分布均匀，均匀性受N电极孔和电极间隙的影响较小；在4~8 A电流时，蓝光器件顶面光强分布不均匀，贯穿N电极孔测试区的光强大于电极孔之间测试区的光强，电极间隙区光强最低，离N电极孔越远的测试点光强越低；蓝光器件在8 A时整体光强达到饱和，而不同微区的光饱和程度及峰值波长随电流的变化有所不同；白光器件在0~4 A电流时，其顶面光强分布均匀。
Abstract
The uniformity of light emission on the top surface of high-power-density LED devices with ceramic packages is a key indicator of this type of device when working at high currents. In this paper, the blue high-power LED flip chip(1.905 mm×1.830 mm(75 mil×72 mil)) is soldered on an aluminum nitride ceramic substrate(3.5 mm×3.5 mm) through Au-Sn eutectic welding, and then were made into white light emitting device and blue light components. The uniformity of micro-area luminescence on the top surface of these devices was also studied. The results show that when the current is less than 4 A, the light intensity distribution on the top surface of the blue device is uniform, and the uniformity is less affected by the N electrode hole and the electrode gap. When the current is 4-8 A, the light intensity distribution on the top surface of the blue light device is uneven. The light passing through the test area of the N electrode hole is stronger than the light intensity of the test area between the electrode holes. The light intensity of the electrode gap area is the lowest, which is far from the N electrode hole. The farther the test point, the lower the light intensity. The overall light intensity of the blue light device reaches saturation at 8 A, but the degree of light saturation and peak wavelength of different micro-area vary with the current change; when the white light device is at a current of 0-4 A, the light intensity distribution on its top surface is uniform.
关键词
微区发光倒装芯片电极孔电极间隙
Keywords
micro-luminescenceflip chipelectrode holeelectrode gap
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