Uniformity of Light Emission in Micro-area on Mesa of High-power Flip-chip LED Devices with Ceramic Packaging

Xiao-zhen LI; Chuan-bing XIONG; Ying-wen TANG; Dong-hui HAO

doi:10.37188/CJL.20210199

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Uniformity of Light Emission in Micro-area on Mesa of High-power Flip-chip LED Devices with Ceramic Packaging

Luminescence Industry and Technology Frontier | 更新时间：2021-09-13

- Uniformity of Light Emission in Micro-area on Mesa of High-power Flip-chip LED Devices with Ceramic Packaging
  增强出版
- Chinese Journal of Luminescence Vol. 42, Issue 9, Pages: 1436-1445(2021)
- 作者机构：
  
  闽南师范大学　物理与信息工程学院，福建　漳州　 363000
- 作者简介：
- 基金信息：
  
  National Natureal Science Foundation of China(51072076);Industry-University Cooperation Project of Fujian Provincial Department of Science and Technology(2018H6015);Cultivation Program for Innovation Team in University of Fujian(201821)
- DOI：10.37188/CJL.20210199
  CLC： TN304
- Published：01 September 2021，
  
  Received：27 May 2021，
  
  Revised：11 June 2021，
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Xiao-zhen LI, Chuan-bing XIONG, Ying-wen TANG, et al. Uniformity of Light Emission in Micro-area on Mesa of High-power Flip-chip LED Devices with Ceramic Packaging. [J]. Chinese Journal of Luminescence 42(9):1436-1445(2021)
DOI：

Xiao-zhen LI, Chuan-bing XIONG, Ying-wen TANG, et al. Uniformity of Light Emission in Micro-area on Mesa of High-power Flip-chip LED Devices with Ceramic Packaging. [J]. Chinese Journal of Luminescence 42(9):1436-1445(2021) DOI： 10.37188/CJL.20210199.

摘要

高功率密度的陶瓷封装LED器件在大电流工作时，其顶面发光均匀性是该类器件的关键指标。本文在3.5 mm×3.5 mm的氮化铝陶瓷基板上金锡共晶了1.905 mm×1.830 mm(75 mil×72 mil)的LED倒装蓝光大功率芯片，然后分别制作成蓝光器件和白光器件，并分别对器件顶面的微区发光均匀性进行了研究。结果表明，蓝光器件在电流<3 A时，其顶面光强分布均匀，均匀性受N电极孔和电极间隙的影响较小；在4~8 A电流时，蓝光器件顶面光强分布不均匀，贯穿N电极孔测试区的光强大于电极孔之间测试区的光强，电极间隙区光强最低，离N电极孔越远的测试点光强越低；蓝光器件在8 A时整体光强达到饱和，而不同微区的光饱和程度及峰值波长随电流的变化有所不同；白光器件在0~4 A电流时，其顶面光强分布均匀。

Abstract

The uniformity of light emission on the top surface of high-power-density LED devices with ceramic packages is a key indicator of this type of device when working at high currents. In this paper

the blue high-power LED flip chip(1.905 mm×1.830 mm(75 mil×72 mil)) is soldered on an aluminum nitride ceramic substrate(3.5 mm×3.5 mm) through Au-Sn eutectic welding

and then were made into white light emitting device and blue light components. The uniformity of micro-area luminescence on the top surface of these devices was also studied. The results show that when the current is less than 4 A

the light intensity distribution on the top surface of the blue device is uniform

and the uniformity is less affected by the N electrode hole and the electrode gap. When the current is 4-8 A

the light intensity distribution on the top surface of the blue light device is uneven. The light passing through the test area of the N electrode hole is stronger than the light intensity of the test area between the electrode holes. The light intensity of the electrode gap area is the lowest

which is far from the N electrode hole. The farther the test point

the lower the light intensity. The overall light intensity of the blue light device reaches saturation at 8 A

but the degree of light saturation and peak wavelength of different micro-area vary with the current change; when the white light device is at a current of 0-4 A

the light intensity distribution on its top surface is uniform.

关键词

微区发光倒装芯片电极孔电极间隙

Keywords

micro-luminescenceflip chipelectrode holeelectrode gap

references

李晋闽, 刘志强, 魏同波, 等. 中国半导体照明发展综述[J].光学学报, 2021, 41(1):0116002-1-13.

LI J M, LIU Z Q, WEI T B, et al. Development summary of semiconductor lighting in China [J].Acta Opt. Sinica, 2021, 41(1):0116002-1-13. (in Chinese)

QIAN X L, LI Y, SHI M M, et al. Color converter based on transparent Ce∶YAG ceramic by different package structure for high-power white LED [J].Ceram. Int., 2019, 45(17):21520-21527.

WU H J, HAO Z D, PAN G H, et al. Phosphor-SiO2 composite films suitable for white laser lighting with excellent color rendering [J].J. Eur. Ceram. Soc., 2020, 40(6):2439-2444.

XIAO Y, HAO Z D, ZHANG L L, et al. An efficient blue phosphor Ba2Lu5B5O17∶Ce3+ stabilized by La2O3:photoluminescence properties and potential use in white LEDs [J].Dyes Pigments, 2018, 154:121-127.

王世龙, 熊传兵, 汤英文, 等. 共晶芯片数及芯片位置对陶瓷共晶封装LED发光性能的影响[J].发光学报, 2020, 41(11):1421-1430.

WANG S L, XIONG C B, TANG Y W, et al. Effect of number and location of eutectic chips on luminescent properties of ceramic eutectic packaged LED [J].Chin. J. Lumin., 2020, 41(11):1421-1430. (in Chinese)

CHENG H, MOU Y, PENG Y, et al. White LEDs with high optical consistency packaged using 3D ceramic substrate [J].IEEE Photon. Technol. Lett., 2019, 31(22):1818-1821.

CHONG W C, LAU K M. Performance enhancements of flip-chip light-emitting diodes with high-density n-type point-contacts [J].IEEE Electr. Device Lett., 2014, 35(10):1049-1051.

余兴建, 舒伟程, 胡润, 等. 高出光品质LED封装:现状及进展[J].中国科学:技术科学, 2017, 47(9):891-922.

YU X J, SHU W C, HU R, et al. LED packaging for high light quality:status and perspectives [J].Sci. Sinica Technol., 2017, 47(9):891-922. (in Chinese)

RYU G H, RYU H Y. Analysis of the temperature dependence of phosphor conversion efficiency in white light-emitting diodes [J].J. Opt. Soc. Korea, 2015, 19(3):311-316.

XIAO Y, HAO Z D, ZHANG L L, et al. Highly efficient green-emitting phosphors Ba2Y5B5O17 with low thermal quenching due to fast energy transfer from Ce3+ to Tb3+ [J].Inorg. Chem., 2017, 56(8):4538-4544.

CHEN Q, MA Y P, YU X J, et al. Phosphor temperature overestimation in high-power light-emitting diode by thermocouple [J].IEEE Trans. Electr. Dev., 2017, 64(2):463-466.

岳相铭, 林航, 林世盛, 等. La3Si6N11∶Ce3+荧光玻璃陶瓷及其在高功率固态照明中的应用[J].发光学报, 2020, 41(12):1529-1537.

YUE X M, LIN H, LIN S S, et al. La3Si6N11∶Ce3+ luminescent glass ceramics applicable to high-power solid-state lighting [J].Chin. J. Lumin., 2020, 41(12):1529-1537. (in Chinese)

YONKEE B P, YOUNG E C, DENBAARS S P, et al. Silver free Ⅲ-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction [J].Appl. Phys. Lett., 2016, 109(19):191104.

ZHOU S J, LIU X T, YAN H, et al. Highly efficient GaN-based high-power flip-chip light-emitting diodes [J].Opt. Express, 2019, 27(12):A669-A692.

TAWFIK W Z, BEA S J, YANG S B, et al. Effect of sapphire substrate thickness on the characteristics of 450 nm InGaN/GaN multi-quantum well light-emitting diodes [J].J. Nanosci. Nanotechnol., 2015, 15(7):5140-5143.

ZHOU S J, XU H H, TANG B, et al. High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate [J].Opt. Express, 2019, 27(20):A1506-A1516.

WU X M, LIU J L, QUAN Z J, et al. Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes [J].Appl. Phys. Lett., 2014, 104(22):221101.

PRUDAEV I A, ROMANOV I S, KOP’EV V V, et al. Temperature dependence of the quantum efficiency of structures with multiple quantum wells InGaN/GaN under photo-and electroluminescence [J].Russ. Phys. J., 2013, 56(7):757-759.

CHENG Q, LIANG L L, JIA J F, et al. Effects of phosphor dispersion on optical characteristics of LED chip scale package LEDs [C].Proceedings of the 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Dresden, Germany, 2017.

MOU Y, WANG H, LIANG D D, et al. Efficient and heat-conducting color converter of phosphor glass film printed on sapphire substrate for high-power white LEDs/LDs [J].J. Non-Cryst. Solids, 2019, 515:98-105.

LIU X, QIAN X L, HU Z W, et al. Al2O3-Ce∶GdYAG composite ceramic phosphors for high-power white light-emitting-diode applications [J].J. Eur. Ceram. Soc., 2019, 39(6):2149-2154.

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Xiao-zhen LI

Chuan-bing XIONG

Ying-wen TANG

Dong-hui HAO

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School of Physics and Information Engineering，Minnan Normal University

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