Temperature-dependent Photoluminescence Properties of Cs0.05FA0.79MA0.16PbI2.52Br0.48 Perovskite Thin Film

Qiong ZHANG; Yue-jia WU; Yan-qin FENG; Li-wei SUN; Jun DAI

doi:10.37188/CJL.20210195

您当前的位置：

首页 >

文章列表页 >

Temperature-dependent Photoluminescence Properties of Cs_0.05FA_0.79MA_0.16PbI_2.52Br_0.48 Perovskite Thin Film

Synthesis and Properties of Materials | 更新时间：2021-09-13

- Temperature-dependent Photoluminescence Properties of Cs_0.05FA_0.79MA_0.16PbI_2.52Br_0.48 Perovskite Thin Film
  增强出版
- 发光学报 Vol. 42, Issue 9, Pages: 1396-1402(2021)
- 作者机构：
  
  江苏科技大学理学院, 江苏镇江 212100
- 作者简介：
  
  [ "张琼(1998-)，女，云南宣威人，硕士研究生，2021年于江苏科技大学获得学士学位，主要从事半导体发光材料及钙钛矿太阳能电池的研究。 E-mail: 18362885213@163.com" ]
  [ "戴俊(1981-)，男，江苏扬州人，博士，教授，博士研究生导师，2012年于东南大学获得博士学位，主要从事半导体发光材料及器件的研究。 E-mail: daijun@just.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(11874185)
- DOI：10.37188/CJL.20210195
  CLC： O482.31
- Published：01 September 2021，
  
  Received：25 May 2021，
  
  Revised：06 July 2021，
扫描看全文
Qiong ZHANG, Yue-jia WU, Yan-qin FENG, et al. Temperature-dependent Photoluminescence Properties of Cs_0.05FA_0.79MA_0.16PbI_2.52Br_0.48 Perovskite Thin Film. [J]. 发光学报 42(9):1396-1402(2021)
DOI：

Qiong ZHANG, Yue-jia WU, Yan-qin FENG, et al. Temperature-dependent Photoluminescence Properties of Cs_0.05FA_0.79MA_0.16PbI_2.52Br_0.48 Perovskite Thin Film. [J]. 发光学报 42(9):1396-1402(2021) DOI： 10.37188/CJL.20210195.

摘要

报道了Cs

0.05

0.79

0.16

PbI

2.52

0.48

钙钛矿薄膜的变温光致发光特性. 采用一步旋涂法，用氯苯作反溶剂制备了Cs

0.05

0.79

0.16

PbI

2.52

0.48

钙钛矿薄膜，并对其表面形貌和结晶质量进行了表征. X射线衍射(XRD)分析结果表明其为四方钙钛矿结构. 钙钛矿薄膜表面均匀致密，晶粒尺寸约为300 nm. 在5~200 K温度范围内测量了光致发光强度，结果表明，光致发光光谱连续蓝移约9.36 nm，没有相变引起的反转红移. 光致发光强度随温度的升高呈双指数降低，由Arrhenius方程拟合得到了两个热激活能. 通过玻色-爱因斯坦双谐振子模型对光学带隙进行了拟合，并对非重整化带隙能量、声学声子能量和光学声子能量也进行了拟合. 通过Segall公式拟合光致发光的半峰宽(FWHM)，研究了激子-声子相互作用对光致发光展宽的影响. 在10 K和100 K时，光致发光主要来自激子复合；而在200 K时，辐射复合主要来自自由-束缚对和施主-受主对，这意味着缺陷相关的光致发光是在高温下产生的. 本文详细的光学参数可以为钙钛矿型光电器件的研究提供物理基础.

Abstract

This paper reports the temperature-dependent photoluminescence properties of Cs

0.05

0.79

0.16

PbI

2.52

-Br

0.48

perovskite thin film. The Cs

0.05

0.79

0.16

PbI

2.52

0.48

perovskite thin film was prepared by one-step spin coating with chlorobenzene anti-solvent treatment

and the surface morphology and crystallization quality were characterized. The X-ray diffraction(XRD) indicates that the Cs

0.05

0.79

0.16

PbI

2.52

0.48

has a typical tetragonal perovskite structure. The perovskite film has a uniform and dense surface

and the grain size is about 300 nm. The photoluminescence intensity was measured in the temperature range of 5-200 K. The photoluminescence spectra show a continuous blue shift of about 9.36 nm

and there is no reversal redshift induced by phase transition. The photoluminescence intensity shows a bi-exponential quenching with the increase of temperature

and two thermal activation energies are obtained by Arrhenius equation. The optical bandgap is fitted by the Bose-Einstein double harmonic oscillator model

and the non-renormalized bandgap energy

the energies of acoustic phonon and optical phonon were fitted. The photoluminescence broadening mechanism was studied by the Segall formula. At 10 K and 100 K

the photoluminescence is mainly from exciton recombination

while at 200 K

the radiation recombination is mainly from free-to-bound and donor-acceptor pairs

which means the defect associated photoluminescence arises at high temperature. The detailed optical parameters in our paper can provide a physical foundation for further optimization of perovskite optoelectronic devices.

关键词

钙钛矿薄膜变温光致发光激子-声子相互作用

Keywords

perovskite thin filmphotoluminescenceexciton-phonon interaction

references

DAI J, ZHENG H G, ZHU C, et al. Comparative investigation on temperature-dependent photoluminescence of CH3NH3PbBr3 and CH(NH2)2PbBr3 microstructures [J].J. Mater. Chem. C, 2016, 4(20):4408-4413.

ZHOU H P, CHEN Q, LI G, et al. Interface engineering of highly efficient perovskite solar cells [J].Science, 2014, 345(6196):542-546.

ZHANG C R, DUAN J J, QIN F F, et al. CsPbBr3 interconnected microwire structure:temperature-related photoluminescence properties and its lasing action [J].J. Mater. Chem. C, 2019, 7(34):10454-10459.

SUN L W, WANG R, WANG W, et al. Excitonic optical properties of cesium trifluoroacetate induced CsPbBr3 thin film with anti-solvent treatment [J].Opt. Mater., 2020, 106:110005-1-7.

CHEN Y H, TAN S Q, LI N X, et al. Self-elimination of intrinsic defects improves the low-temperature performance of perovskite photovoltaics [J].Joule, 2020, 4(9):1961-1976.

BING J M, HUANG S J, HO-BAILLIE A W Y. A review on halide perovskite film formation by sequential solution processing for solar cell applications [J].Energy Technol., 2020, 8(4):1901114-1-22.

LIU Y, CHEN P A, HU Y Y. Recent developments in fabrication and performance of metal halide perovskite field-effect transistors [J].J. Mater. Chem. C, 2020, 8(47):16691-16715.

DUAN J L, XU H Z, SHA W E I, et al. Inorganic perovskite solar cells:an emerging member of the photovoltaic community [J].J. Mater. Chem. A, 2019, 7(37):21036-21068.

SHI L, BUCKNALL M P, YOUNG T L, et al. Gas chromatography-mass spectrometry analyses of encapsulated stable perovskite solar cells [J].Science, 2020, 368(6497):eaba2412-1-7.

KOGO A, CHIKAMATSU M. Cesium iodide post-treatment of organic-inorganic perovskite crystals to improve photovoltaic performance and thermal stability [J].Nanoscale, 2020, 12(42):21605-21609.

SUN D L, ZHANG C, KAVAND M, et al. Spintronics of organometal trihalide perovskites [EB/OL]. (2016-08-02). http://arxiv.org/abs/1608.00993http://arxiv.org/abs/1608.00993.

WU K W, BERA A, MA C, et al. Temperature-dependent excitonic photoluminescence of hybrid organometal halide perovskite films [J].Phys. Chem. Chem. Phys., 2014, 16(41):22476-22481.

WEHRENFENNIG C, LIU M Z, SNAITH H J, et al. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films [J].APL Mater., 2014, 2(8):081513-1-10.

KIM Y C, JEON N J, NOH J H, et al. Beneficial effects of PbI2 incorporated in organo-lead halide perovskite solar cells [J].Adv. Energy Mater., 2016, 6(4):1502104-1-8.

JACOBSSON T J, CORREA-BAENA J P, ANARAKI E H, et al. Unreacted PbI2 as a double-edged sword for enhancing the performance of perovskite solar cells [J].J. Am. Chem. Soc., 2016, 138(32):10331-10343.

CHEN P, BAI Y, WANG S C, et al. In situ growth of 2D perovskite capping layer for stable and efficient perovskite solar cells [J].Adv. Funct. Mater., 2018, 28(17):1706923-1-10.

BI D Q, GAO P, SCOPELLITI R, et al. High-performance perovskite solar cells with enhanced environmental stability based on amphiphile-modified CH3NH3PbI3 [J].Adv. Mater., 2016, 28(15):2910-2915.

KOH T M, SHANMUGAM V, GUO X T, et al. Enhancing moisture tolerance in efficient hybrid 3D/2D perovskite photovoltaics [J].J. Mater. Chem. A, 2018, 6(5):2122-2128.

CHO K T, ZHANG Y, ORLANDI S, et al. Water-repellent low-dimensional fluorous perovskite as interfacial coating for 20% efficient solar cells [J].Nano Lett., 2018, 18(9):5467-5474.

JING P T, ZHENG J J, IKEZAWA M, et al. Temperature-dependent photoluminescence of CdSe-core CdS/CdZnS/ZnS-multishell quantum dots [J].J. Phys. Chem. C, 2009, 113(31):13545-13550.

ZHOU W K, CHEN S L, ZHAO Y C, et al. Constructing CsPbBr3 cluster passivated-triple cation perovskite for highly efficient and operationally stable solar cells [J].Adv. Funct. Mater., 2019, 29(14):1809180-1-11.

BIMBERG D, SONDERGELD M, GROBE E. Thermal dissociation of excitons bounds to neutral acceptors in high-purity GaAs [J].Phys. Rev. B, 1971, 4(10):3451-3455.

ZHENG X H, CHEN H, YAN Z B, et al. Influence of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN/GaN multiple quantum wells [J].J. Appl. Phys., 2004, 96(4):1899-1903.

HWANG J S, GOKARNA A, CHO Y H, et al. Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates [J].Appl. Phys. Lett., 2007, 90(13):131908-1-3.

LIU L, WANG L, LI D, et al. Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures [J].J. Appl. Phys., 2011, 109(7):073106-1-5.

SARAN R, HEUER-JUNGEMANN A, KANARAS A G, et al. Giant bandgap renormalization and exciton-phonon scattering in perovskite nanocrystals [J].Adv. Opt. Mater., 2017, 5(17):1700231.

GÖBEL A, RUF T, CARDONA M, et al. Effects of the isotopic composition on the fundamental gap of CuCl [J].Phys. Rev. B, 1998, 57(24):15183-15190.

FONDELL M, JACOBSSON T J, BOMAN M, et al. Optical quantum confinement in low dimensional hematite [J].J. Mater. Chem. A, 2014, 2(10):3352-3363.

JACOBSSON T J, EDVINSSON T. Quantum confined Stark effects in ZnO quantum dots investigated with photoelectrochemical methods [J].J. Phys. Chem. C, 2014, 118(22):12061-12072.

RUDIN S, REINECKE T L, SEGALL B. Temperature-dependent exciton linewidths in semiconductors [J].Phys. Rev. B, 1990, 42(17):11218-11231.

WANG H N, JI Z W, QU S, et al. Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells [J].Opt. Express, 2012, 20(4):3932-3940.

Views

100

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

Qiong ZHANG

Yuejia WU

Yanqin FENG

Liwei SUN

Jun DAI

Related Institution

School of Science， Jiangsu University of Science and Technology

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰