Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires

Xiang LI; Yu-bin KANG; Ji-long TANG; Xuan FANG; Dan FANG; Ke-xue LI; Deng-kui WANG; Feng-yuan LIN; Xue-ying CHU; Zhi-peng WEI

doi:10.37188/CJL.20210059

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Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires

Synthesis and Properties of Materials | 更新时间：2021-05-20

- Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires
- Chinese Journal of Luminescence Vol. 42, Issue 5, Pages: 629-634(2021)
- 作者机构：
  
  1.长春理工大学　高功率半导体激光国家重点实验室，吉林　长春　 130022
  2.长春理工大学　理学院，吉林　长春　 130022
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61674021;11674038;61704011;61904017;11804335;12074045);the Project of Education Department of Jilin Province(JJKH20200763KJ)
- DOI：10.37188/CJL.20210059
  CLC： O472⁺.3
- Published：01 May 2021，
  
  Received：09 February 2021，
  
  Revised：20 February 2021，
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Xiang LI, Yu-bin KANG, Ji-long TANG, et al. Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires. [J]. Chinese Journal of Luminescence 42(5):629-634(2021)
DOI：

Xiang LI, Yu-bin KANG, Ji-long TANG, et al. Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires. [J]. Chinese Journal of Luminescence 42(5):629-634(2021) DOI： 10.37188/CJL.20210059.

摘要

采用分子束外延技术(MBE)在Si(111)衬底上生长了非掺杂和Si掺杂砷化镓(GaAs)纳米线(NWs)。通过扫描电子显微镜(SEM)证实了生长样品的一维性;通过X射线衍射(XRD)测试和拉曼光谱(Raman)证实了掺杂GaAs纳米线中Si的存在;通过光致发光(PL)研究了非掺杂和Si掺杂GaAs纳米线的发光来源，掺杂改变了GaAs纳米线的辐射复合机制。掺杂导致非掺杂纳米线中自由激子发光峰和纤锌矿/闪锌矿(WZ/ZB)混相结构引起的缺陷发光峰消失。

Abstract

Undoped and Si-doped gallium arsenide(GaAs) nanowires(NWs) were carried out on Si(111) substrates by molecular beam epitaxy(MBE). The one-dimensional properties of the nanowires were confirmed by scanning electron microscopy(SEM).The presence of Si in doped GaAs NWs was confirmed by X-ray diffraction(XRD) and Raman spectroscopy. The luminescence source of undoped and Si doped GaAs NWs was studied by photoluminescence(PL). The PL results showed that doping changed the radiation recombination mechanism of GaAs NWs. Compared with undoped NWs

the doping results that in the free exciton emission peak and the defect-related emission peak of wurtzite and zinc blende mixed structure disappear simultaneously.

关键词

光谱学GaAs纳米线Si掺杂光致发光分子束外延

Keywords

spectroscopyGaAs nanowiresSi dopingphotoluminescenceMBE

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