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Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires
Synthesis and Properties of Materials | 更新时间:2021-05-20
    • Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires

    • Chinese Journal of Luminescence   Vol. 42, Issue 5, Pages: 629-634(2021)
    • DOI:10.37188/CJL.20210059    

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  • Xiang LI, Yu-bin KANG, Ji-long TANG, et al. Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires. [J]. Chinese Journal of Luminescence 42(5):629-634(2021) DOI: 10.37188/CJL.20210059.

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