Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor

Jin-peng DONG; Qiang SUN; Gui-juan LI; He-ping SU; Lu WANG; Yang-yang ZHU; Li-juan WANG

doi:10.37188/CJL.20210024

您当前的位置：

首页 >

文章列表页 >

Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor

Device Fabrication and Physics | 更新时间：2021-05-20

- Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor
- Chinese Journal of Luminescence Vol. 42, Issue 5, Pages: 700-707(2021)
- 作者机构：
  
  1.长春工业大学　化学工程学院，吉林　长春　 130012
  2.海南科技职业大学，海南　海口　 571126
- 作者简介：
- 基金信息：
  
  Undergraduate Training Programs for Innovation and Entrepreneurship of Jilin Province(202010190106);Key Program for Science and Technology Department of Jilin Province(20200403146SF);Scientific Research Foundation of Education Department of Jilin Province(JJKH20200682KJ);Scientific Research Foundation of Education Department(JJKH20200682KJ)
- DOI：10.37188/CJL.20210024
  CLC： TN321⁺.5
- Published：01 May 2021，
  
  Received：13 January 2021，
  
  Revised：01 February 2021，
扫描看全文
Jin-peng DONG, Qiang SUN, Gui-juan LI, et al. Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor. [J]. Chinese Journal of Luminescence 42(5):700-707(2021)
DOI：

Jin-peng DONG, Qiang SUN, Gui-juan LI, et al. Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor. [J]. Chinese Journal of Luminescence 42(5):700-707(2021) DOI： 10.37188/CJL.20210024.

摘要

通过调控对六联苯(

6P)诱导层和酞菁锌(ZnPc)蒸镀工艺条件，研究了有机半导体小分子的结晶生长成膜与ZnPc有机薄膜晶体管(OTFT)器件电性能的关系。结果表明

6P在180190 ℃较高的衬底生长温度和34 nm的生长厚度下能够形成更大的结晶畴以及对二氧化硅衬底表面更好的覆盖，有利于诱导ZnPc小分子的结晶生长，使晶畴的排列更加有序。同时通过X射线衍射分析晶体结构，结果表明

-6P衬底温度的升高会明显提高ZnPc薄膜的结晶性。电性能研究发现

ZnPc蒸镀厚度的增加会显著提高器件的饱和电流和迁移率，在异质诱导条件下

-6P薄膜厚度为3 nm、ZnPc蒸镀厚度为20 nm时，器件的饱和电流为1.08×10

-6

A，迁移率为1.66×10

-2

·V

-1

·s

-1

。

Abstract

By adjusting the para-hexabiphenyl(

-6P) induction layer and zinc phthalocyanine(ZnPc) evaporation process conditions

the relationship between the crystal growth of organic semiconductor small molecules and the electrical properties of ZnPc OTFT devices was studied. The results showed that

-6P films can form larger crystal domains and better surface coverage on silicon dioxide substrate under the substrate growth temperature of 180-190 ℃ and the growth thickness of 3-4 nm. This was beneficial to induce the crystal growth of ZnPc molecules and make the arrangement of the crystal domains more orderly. At the same time

the crystal structure was analyzed by X-ray diffraction. The results showed that the rise in temperature of the

-6P substrate would significantly improve the crystallinity of the ZnPc films. Combined with the study of electrical properties

the increase of ZnPc vapor deposition thickness will significantly increase the saturation current and device mobility of the device. Under heterogeneous induction conditions

when the

-6P film thickness is 3 nm and the ZnPc film thickness is 20 nm

the saturation current of the device is 1.08×10

-6

and the mobility is 1.66×10

-2

·V

-1

·s

-1

关键词

p-6P酞菁锌(ZnPc)薄膜生长有机薄膜晶体管(OTFT)电性能

Keywords

p-6Pzinc phthalocyanine(ZnPc)films growthorganic thin film transistor(OTFT)electrical properties

references

姜亦杨, 陈艳, 王旭东, 等. 悬空氧化铟纳米线晶体管制备与光电性能表征[J].中国光学, 2021, 14(1):196-205.

JIANG Y Y, CHEN Y, WANG X D, et al.. Fabrication and optoelectronic characterization of suspended In2O3 nanowire transistors[J].Chin. Opt., 2021, 14(1):196-205. (in Chinese)

万云海, 邹志翔, 林亮, 等. 氧化物薄膜晶体管刻蚀阻挡层PECVD沉积条件研究[J].液晶与显示, 2019, 34(1):7-13.

WAN Y H, ZOU Z X, LIN L, et al.. Etch-stop layer plasma chemical enhanced vapor deposition for oxide thin-film-transistor[J].Chin. J. Liq. Cryst. Disp., 2019, 34(1):7-13. (in Chinese)

董俊辰, 郁文, 李慧津, 等. 高性能钆铝锌氧薄膜晶体管的制备[J].液晶与显示, 2017, 32(5):339-343.

DONG J C, YU W, LI H J, et al.. Fabrication of high performance Gadolinium-aluminum-zinc-oxide thin film transistors[J].Chin. J. Liq. Cryst. Disp., 2017, 32(5):339-343. (in Chinese)

SONG C, LI Y, GAO C C, et al.. An OTFT based on titanium phthalocyanine dichloride:a new p-type organic semiconductor[J].Mater. Lett., 2020, 270:127666.

BORTHAKUR T, SARMA R. Performance enhancement of top contact pentacene-based organic thin-film transistor (OFET) using perylene interlayer between organic/electrode interface[J].Appl. Phys. A, 2017, 123(3):207-1-5.

ZHUANG X M, HUANG W, HAN S J, et al.. Interfacial modifying layer-driven high-performance organic thin-film transistors and their nitrogen dioxide gas sensors[J].Org. Electron., 2017, 49:334-339.

NOBESHIMA T, UEMURA S, YOSHIDA M, et al.. Stretchable conductor from oriented short conductive fibers for wiring soft electronics[J].Polym. Bull., 2016, 73(9):2521-2529.

ZHOU J L, JIANG Y Y, WANG Z, et al.. Influence of underneath pentacene thickness on performance of p-n heterojunction organic thin film transistors[J].Eur. Phys. J. Appl. Phys., 2016, 73(2):20201-1-6.

KIM M J, HEO H W, SUH Y K, et al.. Morphology control of TIPS-pentacene grains with inert gas injection and effects on the performance of OTFTs[J].Org. Electron., 2011, 12(7):1170-1176.

李亨利, 都昊, 王丽娟, 等. 异质诱导生长的酞菁铜薄膜晶体管的研究[J].液晶与显示, 2016, 31(2):157-163.

LI H L, DU H, WANG L J, et al.. Research of copper phthalocyanine thin film transistor by heterogeneous induced growth[J].Chin. J. Liq. Cryst. Disp., 2016, 31(2):157-163. (in Chinese)

PFUETZNER S, MEISS J, PETRICH A, et al.. Thick C60:ZnPc bulk heterojunction solar cells with improved performance by film deposition on heated substrates[J].Appl. Phys. Lett., 2009, 94(25):253303-1-3.

WANG H, ZHU F, YANG J, et al.. Weak epitaxy growth affording high-mobility thin films of disk-like organic semiconductors[J].Adv. Mater., 2007, 19(16):2168-2171.

李文佳, 苏丽娜, 任舰, 等. 阴极修饰层CuPc、ZnPc、C60对OLED光电性能的影响[J].发光学报, 2018, 39(12):1757-1764.

LI W J, SU L N, REN J, et al.. Influence of CuPc, ZnPc, C60 as cathode modification layer on the performance of OLED[J].Chin. J. Lumin., 2018, 39(12):1757-1764. (in Chinese)

李占国, 张玉婷, 谢强, 等. 基于p-6P异质诱导生长酞菁铜薄膜的NO2传感器[J].物理化学学报, 2016, 32(4):1005-1011.

LI Z G, ZHANG Y T, XIE Q, et al.. NO2 sensors based on p-6P heterogametic induction growth of copper phthalocyanine thin films[J].Acta Phy.-Chim. Sinica, 2016, 32(4):1005-1011. (in Chinese)

ZHANG F J, QU G, MOHAMMADI E, et al.. Solution-processed nanoporous organic semiconductor thin films:toward health and environmental monitoring of volatile markers[J].Adv. Funct. Mater., 2017, 27(23):1701117.

WOOJUNG C, NAITO M, FUJII R, et al.. Preparation of phthalocyanine ultrathin film via layer-by-layer assembly[J].Thin Solid Films, 2009, 518(2):625-628.

张国成, 陈惠鹏, 郭太良. 绝缘层修饰对喷墨打印有机场效应晶体管形貌和性能的影响[J].发光学报, 2017, 38(2):194-200.

ZHANG G C, CHEN H P, GUO T L. Impact of the modification of dielectric layers on the morphlogy and device performance of inkjet-printed OFET[J].Chin. J. Lumin., 2017, 38(2):194-200. (in Chinese)

EL-NAHASS M M, ZEYADA H M, AZIZ M S, et al.. Structural and optical properties of thermally evaporated zinc phthalocyanine thin films[J].Opt. Mater., 2004, 27(3):491-498.

孙洋, 闫闯, 谢强, 等. 双异质诱导层对红荧烯薄膜晶体管性能的影响[J].高等学校化学学报, 2018, 39(6):1221-1227.

SUN Y, YAN C, XIE Q, et al.. Effect of heterogeneous inducing bilayer on the properties of rubrene thin film transistors[J].Chem. J. Chin. Univ., 2018, 39(6):1221-1227. (in Chinese)

PAN F, TIAN H K, QIAN X R, et al.. High performance vanadyl phthalocyanine thin-film transistors based on fluorobenzene end-capped quaterthiophene as the inducing layer[J].Org. Electron., 2011, 12(8):1358-1363.

LI L, TANG Q, LI H, et al.. An ultra closely π-stacked organic semiconductor for high performance field-effect transistors[J].Adv. Mater., 2007, 19(18):2613-2617.

DEY A, SINGH A, DAS D, et al.. High-performance ZnPc thin film-based photosensitive organic field-effect transistors:influence of multilayer dielectric systems and thin film growth structure[J].ACS Omega, 2017, 2(3):1241-1248.

Views

112

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

Jinpeng DONG

Qiang SUN

Guijuan LI

Heping Su

Lu WANG

Yangyang ZHU

Li Juan WANG

Related Institution

College of Chemical Engineering， Changchun University of Technology

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰