Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor

Jin-peng DONG; Qiang SUN; Gui-juan LI; He-ping SU; Lu WANG; Yang-yang ZHU; Li-juan WANG

doi:10.37188/CJL.20210024

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Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor

Device Fabrication and Physics | 更新时间：2021-05-20

- Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor
- Chinese Journal of Luminescence Vol. 42, Issue 5, Pages: 700-707(2021)
- 作者机构：
  
  1.长春工业大学　化学工程学院，吉林　长春　 130012
  2.海南科技职业大学，海南　海口　 571126
- 作者简介：
- 基金信息：
  
  Undergraduate Training Programs for Innovation and Entrepreneurship of Jilin Province(202010190106);Key Program for Science and Technology Department of Jilin Province(20200403146SF);Scientific Research Foundation of Education Department of Jilin Province(JJKH20200682KJ);Scientific Research Foundation of Education Department(JJKH20200682KJ)
- DOI：10.37188/CJL.20210024
  CLC：
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Jin-peng DONG, Qiang SUN, Gui-juan LI, et al. Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor. [J]. Chinese Journal of Luminescence 42(5):700-707(2021)
DOI：

Jin-peng DONG, Qiang SUN, Gui-juan LI, et al. Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor. [J]. Chinese Journal of Luminescence 42(5):700-707(2021) DOI： 10.37188/CJL.20210024.

摘要

通过调控对六联苯(,p-,6P)诱导层和酞菁锌(ZnPc)蒸镀工艺条件，研究了有机半导体小分子的结晶生长成膜与ZnPc有机薄膜晶体管(OTFT)器件电性能的关系。结果表明,p-,6P在180190 ℃较高的衬底生长温度和34 nm的生长厚度下能够形成更大的结晶畴以及对二氧化硅衬底表面更好的覆盖，有利于诱导ZnPc小分子的结晶生长，使晶畴的排列更加有序。同时通过X射线衍射分析晶体结构，结果表明,p,-6P衬底温度的升高会明显提高ZnPc薄膜的结晶性。电性能研究发现,ZnPc蒸镀厚度的增加会显著提高器件的饱和电流和迁移率，在异质诱导条件下,p,-6P薄膜厚度为3 nm、ZnPc蒸镀厚度为20 nm时，器件的饱和电流为1.08×10,-6, A，迁移率为1.66×10,-2, cm,2,·V,-1,·s,-1,。

Abstract

By adjusting the para-hexabiphenyl(,p,-6P) induction layer and zinc phthalocyanine(ZnPc) evaporation process conditions, the relationship between the crystal growth of organic semiconductor small molecules and the electrical properties of ZnPc OTFT devices was studied. The results showed that ,p,-6P films can form larger crystal domains and better surface coverage on silicon dioxide substrate under the substrate growth temperature of 180-190 ℃ and the growth thickness of 3-4 nm. This was beneficial to induce the crystal growth of ZnPc molecules and make the arrangement of the crystal domains more orderly. At the same time, the crystal structure was analyzed by X-ray diffraction. The results showed that the rise in temperature of the ,p,-6P substrate would significantly improve the crystallinity of the ZnPc films. Combined with the study of electrical properties, the increase of ZnPc vapor deposition thickness will significantly increase the saturation current and device mobility of the device. Under heterogeneous induction conditions, when the ,p,-6P film thickness is 3 nm and the ZnPc film thickness is 20 nm, the saturation current of the device is 1.08×10,-6, A, and the mobility is 1.66×10,-2, cm,2,·V,-1,·s,-1,.

关键词

p-6P酞菁锌(ZnPc)薄膜生长有机薄膜晶体管(OTFT)电性能

Keywords

p-6Pzinc phthalocyanine(ZnPc)films growthorganic thin film transistor(OTFT)electrical properties

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