Single In2O3 Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity
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Device Fabrication and Physics|更新时间:2021-02-08
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Single In2O3 Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity
Chinese Journal of LuminescenceVol. 42, Issue 2, Pages: 208-214(2021)
作者机构:
长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022
作者简介:
基金信息:
National Natural Science Foundation of China;National Natural Science Foundation of China;National Natural Science Foundation of China;Foundation of State Key Laboratory of High Power Semiconductor Lasers;the Developing Project of Science and Technology of Jilin Province;the Project of Education Department of Jilin Province;The Youth Foundation of Changchun University of Science and Technology
Xue CHEN, Zhi-peng WEI. Single In2O3 Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity. [J]. Chinese Journal of Luminescence 42(2):208-214(2021)
DOI:
Xue CHEN, Zhi-peng WEI. Single In2O3 Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity. [J]. Chinese Journal of Luminescence 42(2):208-214(2021) DOI: 10.37188/CJL.20200376.
Single In2O3 Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity
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