Output Characteristics of Broad-area Stripe Semiconductor Lasers with Microthermal Channel Anode Structure

Yuan-hong CAI; Xin GAO; Jing-hui WANG; Zhi-hao WANG; Bao-xue BO

doi:10.37188/CJL.20200365

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Output Characteristics of Broad-area Stripe Semiconductor Lasers with Microthermal Channel Anode Structure

Device Fabrication and Physics | 更新时间：2021-04-23

- Output Characteristics of Broad-area Stripe Semiconductor Lasers with Microthermal Channel Anode Structure
- Chinese Journal of Luminescence Vol. 42, Issue 4, Pages: 518-525(2021)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室，吉林　长春　 130022
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61774024);National Key R&D Project(2017YFB0405100);Science and Technology Development Plan of Jilin Province(20190302007GX)
- DOI：10.37188/CJL.20200365
  CLC： TN248.4
- Published：01 April 2021，
  
  Received：30 November 2020，
  
  Revised：23 December 2020，
扫描看全文
Yuan-hong CAI, Xin GAO, Jing-hui WANG, et al. Output Characteristics of Broad-area Stripe Semiconductor Lasers with Microthermal Channel Anode Structure. [J]. Chinese Journal of Luminescence 42(4):518-525(2021)
DOI：

Yuan-hong CAI, Xin GAO, Jing-hui WANG, et al. Output Characteristics of Broad-area Stripe Semiconductor Lasers with Microthermal Channel Anode Structure. [J]. Chinese Journal of Luminescence 42(4):518-525(2021) DOI： 10.37188/CJL.20200365.

摘要

为了抑制宽条形半导体激光器的热透镜效应，提高慢轴光束质量，本文提出并制作了一种微热通道电极结构激光器。该芯片p面注入区电极处被设计为较厚的高热导率的电极结构，封装后激光器两侧与热沉之间形成空气间隙，抑制激光器有源区横向热流，使激光器内温度分布均匀，有效地降低慢轴发散角。对该激光器的封装模型进行了稳态热分析，优化了微热通道电极结构的厚度和宽度，并制作了波长为940 nm的微热通道电极结构激光器。测试结果表明，在注入电流为2 A时，微热通道电极结构激光器的发散角相对于普通电极结构激光器降低了24%，有效地降低了激光器慢轴光束发散角。

Abstract

In order to suppress the thermal lens effect of broad-area stripe semiconductor lasers

and thus improve the slow-axis beam quality of semiconductor lasers

a laser with microthermal channels anode structure is proposed and fabricated. The injection region electrode on the p-side of laser is designed as a thick electrode structure of high thermal conductivity. After packaging

an air gap is formed between the p-side of laser and the top side of AlN heat sink to suppress the transverse heat flow in the current injection region

so that the temperature distribution of the emission region is uniform and the slow-axis divergence angle is effectively reduced. The thickness and width of microthermal channels anode structure are optimized by steady-state thermal analysis of the laser packaging model. A 940 nm micro thermal channel anode structure laser is fabricated. The measurement results show that the divergence angle of the microthermal channels anode structure laser at 2 A is 24%

lower than that of the normal anode structure laser

which effectively reduces the laser slow-axis beam divergence angle.

关键词

宽条形半导体激光器热透镜微热通道电极结构慢轴发散角

Keywords

wide stripe semiconductor laserthermal lensmicrothermal channel anode structureslow-axis divergence angle

references

董彦，梁琼，王志刚. 大功率半导体激光器应用 [J].光电技术应用，2003，18(4):21-25.

DONG Y, LIANG Q, WANG Z G. Application of high power semiconductor laser [J].Electro-Opt. Technol. Appl., 2003, 18(4):21-25. (in Chinese)

LIN L. The advances and characteristics of high-power diode laser materials processing [J].Opt. Lasers Eng., 2000, 34(4-6):231-253.

NISHIYAMA T, TOMII N, SATO M, et al. Clinical evaluation of OSADA LIGHTSURGE 3000, a high power diode laser [J].Nippon Laser Igakkaishi, 1995, 16(2):9-18.

马晓辉，史全林，徐莉，等. 高功率半导体激光器光纤耦合模块 [J].红外与激光工程，2009，38(4):674-678.

MA X H, SHI Q L, XU L, et al. High-power laser diode fiber-coupled module [J].Infrared Laser Eng., 2009, 38(4):674-678. (in Chinese)

雷志锋，杨少华，黄云. 高功率半导体激光器的可靠性与寿命评价 [J].应用光学，2008，29(1):90-95.

LEI Z F, YANG S H, HUANG Y. Reliability and lifetime assessment of high-power diode laser [J].J. Appl. Opt., 2008, 29(1):90-95. (in Chinese)

CRUMP P, ERBERT G, WENZEL H, et al. Efficient high-power laser diodes [J].IEEE J. Sel. Top. Quant. Electron., 2013, 19(4):1501211-1-11.

闫宏宇，高欣，宋健，等. 976 nm宽条形高功率半导体激光器的光束质量M2评价 [J].发光学报，2019，40(2):196-203.

YAN H Y, GAO X, SONG J, et al. Evaluation of beam quality M2 for 976 nm wide stripe high power semiconductor laser [J].Chin. J. Lumin., 2019, 40(2):196-203. (in Chinese)

WENZEL H, DALLMER M, ERBERT G. Thermal lensing in high-power ridge-waveguide lasers [J].Opt. Quant. Electron., 2008, 40(5-6):379-384.

O'CALLAGHAN J R, HOULIHAN J, VOIGNIER V, et al. Spatial coherence and thermal lensing in broad-area semiconductor lasers [J].IEEE J. Quant. Electron., 2004, 40(1):1-9.

CHAN P K L, PIPE K P, PLANT J J, et al. Temperature mapping and thermal lensing in large-mode, high-power laser diodes [J].Appl. Phys. Lett., 2006, 89(20):201110-1-3.

宋健，高欣，闫宏宇，等. 大功率半导体激光器波导热透镜效应及对慢轴光束发散角的影响 [J].中国激光，2018，45(10):1005004-1-7.

SONG J, GAO X, YAN H Y, et al. Thermal lens effect of high power semiconductor laser waveguide and its influence on beam divergence angle of slow axis [J].Chin. J. Lasers, 2018, 45(10):1005004-1-7. (in Chinese)

AN H Y, XIONG Y H, JIANG C L J, et al. Methods for slow axis beam quality improvement of high power broad area diode lasers [C].Proceedings of SPIE 8965, High-power Diode Laser Technology and Applications Ⅻ, San Francisco, California, United States, 2014:8965U.

PIPREK J. Inverse thermal lens effects on the far-field blooming of broad area laser diodes [J].IEEE Photonics Technol. Lett., 2013, 25(10):958-960.

WINTERFELDT M, CRUMP P, KNIGGE S, et al. High beam quality in broad area lasers via suppression of lateral carrier accumulation [J].IEEE Photonics Technol. Lett., 2015, 27(17):1809-1812.

WINTERFELDT M, CRUMP P, WENZEL H, et al. Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers [J].J. Appl. Phys., 2014, 116(6):063103.

赵碧瑶，井红旗，仲莉，等. 半导体激光器边缘绝热封装改善慢轴光束质量 [J].中国激光，2020，47(1):0105002-1-11.

ZHAOB Y, JING H Q, ZHONG L, et al. Improving slow-axis laser beam quality of semiconductor laser with edge adiabatic package [J].Chin. J. Lasers, 2020, 47(1):0105002-1-11. (in Chinese)

王文，高欣，周泽鹏，等. 百瓦级多芯片半导体激光器稳态热分析 [J].红外与激光工程，2014，43(5):1438-1443.

WANG W, GAO X, ZHOU Z P, et al. Steady-state thermal analysis of hundred-watt semiconductor laser with multichip-packaging [J].Infrared Laser Eng., 2014, 43(5):1438-1443. (in Chinese)

宋云菲，王贞福，李特，等. 808 nm半导体激光芯片电光转换效率的温度特性机理研究 [J].物理学报，2017，66(10):101-106.

SONG Y F, WANG Z F, LI T, et al. Efficiency analysis of 808 nm laser diode array under different operating temperatures [J].Acta Phys. Sinica, 2017, 66(10):101-106. (in Chinese)

曹伟冬，冯源，晏长岭，等. 基于ANSYS Workbench半导体激光器封装热特性分析 [J].现代物理，2018，8(4):26078-1-7.

CAO W D, FENG Y, YAN C L, et al. Analysis of thermal characteristics of semiconductor laser packaging based on ANSYS workbench [J].Mod. Phys., 2018, 8(4):26078-1-7. (in Chinese)

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Related Institution

State Key Laboratory of High-power Semiconductor Laser， Changchun University of Science and Technology

State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology

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