GaInSb/GaSb quantum wells have been grown by MOCVD technique and the photoluminescence (PL) measurement was performed at 4K. The effects of GaSb capping layer thickness
GaInSb well width and indium content in well on the PL spectra were investigated in detail. It was found that the carrier concentration increased with decreasing the thickness of the capping layer. The FWHM of photoluminescence spectra broaden as the In content in well increased because more clusters should exist in the alloys with high In content and consequently result in the degeneration of the optical quality.