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Impact of Well Thickness on Static and Dynamic Behavior of InGaN Light-emitting Diode with Single Quantum Well
Device Fabrication and Physics | 更新时间：2026-03-05

    • Impact of Well Thickness on Static and Dynamic Behavior of InGaN Light-emitting Diode with Single Quantum Well

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    • “In the field of light-emitting diodes, researchers have made significant progress. They established a circuit model for single-quantum-well InGaN/GaN LEDs based on standard rate equations. This model investigates the impacts of quantum well thickness on LED performance. Simulated results show that a 4 nm well offers better light-current performance, while a 3 nm well provides a wider 3 dB modulation bandwidth.”
    • Chinese Journal of Luminescence   Vol. 47, Issue 2, Pages: 314-320(2026)

    • DOI：10.37188/CJL.20250235    

      CLC： TN312.8
    • CSTR：32170.14.CJL.20250235    

    • Received：05 November 2025，

      Revised：2025-11-24，

      Published：25 February 2026

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  • CHEN Guichu,HE Longfei,PENG Kun.Impact of Well Thickness on Static and Dynamic Behavior of InGaN Light-emitting Diode with Single Quantum Well[J].Chinese Journal of Luminescence,2026,47(02):314-320. DOI： 10.37188/CJL.20250235. CSTR： 32170.14.CJL.20250235.

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