“Related research has made new progress in the field of nitride RGB full-color Micro LED displays. Researchers have proposed a novel nitrogen polar InGaN based red LED device structure, which replaces the traditional p-AlGaN electron blocking layer (EBL) with an n-In0.1Ga0.9N/GaN superlattice electron reduction layer (EDL), effectively improving the carrier confinement ability and crystal quality, and increasing the peak quantum efficiency and light output power of the device by 16% and 32%, respectively. This provides a new idea for improving the luminous efficiency of InGaN based red LEDs.”