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Epitaxial Growth of Hexagonal Boron Nitride and Device Application
Invited Review | 更新时间：2026-09-12

    • Epitaxial Growth of Hexagonal Boron Nitride and Device Application

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    • Chinese Journal of Luminescence   Vol. 46, Issue 10, Pages: 1798-1818(2025)

    • DOI：10.37188/CJL.20250128    

      CLC： O482.31
    • CSTR：32170.14.CJL.20250128    

    • Received：26 April 2025，

      Revised：2025-05-11，

      Published：25 October 2025

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  • DONG Jingnan,DUO Yiwei,YANG Jiankun,et al.Epitaxial Growth of Hexagonal Boron Nitride and Device Application[J].Chinese Journal of Luminescence,2025,46(10):1798-1818. DOI： 10.37188/CJL.20250128. CSTR： 32170.14.CJL.20250128.

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Related Author

Dong Jingnan
Duo Yiwei
Yang Jiankun
Wang Junxi
Wei Tongbo
LIU Guanlin
LIU Lei
SHEN Dezhen

Related Institution

Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences
University of Chinese Academy of Sciences
State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
State Key Laboratory of Luminescence Science and Technology， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
Key Laboratory of Luminescence and Optical Information， Ministry of Education， School of Physical Science and Engineering， Beijing Jiaotong University
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