Performance Optimization of Solution-processed QLEDs with CuSCN Hole Injection Layer
Research Letter|更新时间:2025-07-18
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Performance Optimization of Solution-processed QLEDs with CuSCN Hole Injection Layer
增强出版
“The latest research has broken through the performance limitations of quantum dot light-emitting diodes, using CuSCN and Poly TPD to significantly improve luminescence brightness and current efficiency, providing theoretical support and practical guidance for efficient QLED applications.”
Chinese Journal of LuminescenceVol. 46, Issue 7, Pages: 1262-1270(2025)
作者机构:
西南大学物理科学与技术学院 微纳结构与光电子学重庆市重点实验室, 重庆 400715
作者简介:
基金信息:
the Natural Science Foundation of Chongqing(CSTB2024NSCQ-QCXMX0056;2023NSCQ-MSX0888);the Venture and Innovation Support Program for Chongqing Overseas Returnees(cx2024035)