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Development of X-ray Detectors Based on Wide-bandgap Semiconductor
Invited Paper | 更新时间：2025-05-27

    • Development of X-ray Detectors Based on Wide-bandgap Semiconductor

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    • “In the field of X-ray detection, wide bandgap semiconductor materials such as silicon carbide and gallium nitride exhibit excellent performance, meeting the requirements of high-performance detectors and providing reference for future research directions and potential applications in medical imaging, industrial testing, and space exploration.”
    • Chinese Journal of Luminescence   Vol. 46, Issue 5, Pages: 794-812(2025)

    • DOI：10.37188/CJL.20240312    

      CLC： TL816.1
    • CSTR：32170.14.CJL.20240312    

    • Received：29 November 2024，

      Revised：18 December 2024，

      Published：25 May 2025

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  • WU Xuan,GAO Runlong,LIU Zhiyu,et al.Development of X-ray Detectors Based on Wide-bandgap Semiconductor[J].Chinese Journal of Luminescence,2025,46(05):794-812. DOI： 10.37188/CJL.20240312. CSTR： 32170.14.CJL.20240312.

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LIU Linyue
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Related Institution

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School of Materials Science and Energy Engineering, Foshan University
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