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Deep UV detection: from single-crystalline MgZnO to amorphous Ga2O3
更新时间：2024-12-30
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    • Deep UV detection: from single-crystalline MgZnO to amorphous Ga2O3

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    • “According to the latest report, research on wide bandgap oxide semiconductor deep ultraviolet detectors has made progress, with excellent performance of amorphous Ga2O3 thin films and improved device performance through oxygen vacancy defect control, laying the foundation for deep ultraviolet detection applications.”
    • Chinese Journal of Luminescence   Pages: 1-13(2024)

    • DOI：10.37188/CJL.20240266    

      CLC：
    • CSTR：32170.14.CJL.20240266    

    • Published Online：19 December 2024，

      Received：20 October 2024，

      Revised：2024，

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  • LIANG HUILI, ZHU RUI, DU XIAOLONG, et al. Deep UV detection: from single-crystalline MgZnO to amorphous Ga2O3. [J/OL]. Chinese journal of luminescence, 2024, 1-13. DOI： 10.37188/CJL.20240266. CSTR： 32170.14.CJL.20240266.

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Related Author

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Related Institution

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Key Laboratory of Optoelectric Measurement and Optical Information Transmission Technology of Ministry of Education， Changchun University of Science and Technology
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