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Deep UV Detection： from Single-crystalline MgZnO to Amorphous Ga2O3
Invited Paper | 更新时间：2025-03-24
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    • Deep UV Detection： from Single-crystalline MgZnO to Amorphous Ga2O3

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    • “According to the latest report, significant progress has been made in the research of wide bandgap oxide semiconductor deep ultraviolet detectors. Amorphous Ga2O3 thin films exhibit excellent deep ultraviolet response characteristics, laying the foundation for future deep ultraviolet detection industry applications.”
    • Chinese Journal of Luminescence   Vol. 46, Issue 3, Pages: 399-411(2025)

    • DOI：10.37188/CJL.20240266    

      CLC： O482.31;TN366
    • CSTR：32170. 14. CJL. 20240266    

    • Received：20 October 2024，

      Revised：14 November 2024，

      Published：25 March 2025

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  • LIANG Huili,ZHU Rui,DU Xiaolong,et al.Deep UV Detection： from Single-crystalline MgZnO to Amorphous Ga2O3[J].Chinese Journal of Luminescence,2025,46(03):399-411. DOI： 10.37188/CJL.20240266. CSTR： 32170. 14. CJL. 20240266.

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Related Author

Liang Huili
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Related Institution

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Key Laboratory for Photonic and Electronic Bandgap Materials， Ministry of Education， School of Physics and Electronic Engineering， Harbin Normal University
State Key Laboratory of Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University
Key Laboratory of Optoelectric Measurement and Optical Information Transmission Technology of Ministry of Education， Changchun University of Science and Technology
Physics Department， Harbin Institute of Technology
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