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Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure
Synthesis and Properties of Materials | 更新时间:2023-11-27
    • Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure

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    • Chinese Journal of Luminescence   Vol. 44, Issue 11, Pages: 1974-1980(2023)
    • DOI:10.37188/CJL.20230213    

      CLC: O469
    • Received:16 September 2023

      Revised:04 October 2023

      Published:05 November 2023

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  • DENG Jianyang,HE Longfei,WU Zhibo,et al.Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure[J].Chinese Journal of Luminescence,2023,44(11):1974-1980. DOI: 10.37188/CJL.20230213.

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Related Author

DENG Jianyang
HE Longfei
WU Zhibo
LI Rui
XU Mingsheng
XU Xiangang
JI Ziwu
LIANG Ruihan

Related Institution

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School of Physics, Northeast Normal University
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