MOCVD法制备BGaN薄膜

MOCVD法制备BGaN薄膜 Epitaxial Growth of BGaN Films by MOCVD 曹越 CAO Yue first-author 于佳琪 YU Jia-qi 张立东 ZHANG Li-dong 邓高强 DENG Gao-qiang 张源涛 ZHANG Yuan-tao 张宝林 ZHANG Bao-lin 吉林大学 电子科学与工程学院, 集成光电子学国家重点联合实验室,吉林 长春,130012 吉林大学 电子科学与工程学院, 集成光电子学国家重点联合实验室,吉林 长春,130012 State Key Laboratory on Integrated Optoeletronics, College of Electronic Science and Engineering, Jilin University State Key Laboratory on Integrated Optoeletronics, College of Electronic Science and Engineering, Jilin University 利用金属有机物化学气相沉积（MOCVD）技术，在蓝宝石衬底上进行了BGaN薄膜的外延生长，研究了生长厚度、温度、压力和B/Ⅲ比等条件对BGaN薄膜中B组分的影响。X射线衍射测试结果表明，降低生长温度、压力以及增加B/Ⅲ比，更有利于提高BGaN薄膜中B的并入效率。在800℃、30 kPa及B/Ⅲ比为30%的生长条件下，制备的BGaN薄膜中B组分最高，为6.1%。 In this work, we used metal organic chemical vapor deposition (MOCVD) technology to carry out epitaxial growth of BGaN films on sapphire substrates. We studied the influence of growth thickness, temperature, pressure and B/Ⅲ ratio on the boron content of the BGaN films. X-ray diffraction measurement results demonstrate that lowering the growth temperature, pressure and increasing the B/Ⅲ ratio are conductive to improving the incorporation efficiency of B in BGaN films. At the growth conditions of 800 ℃, 30 kPa and B/Ⅲ ratio of 30%, the B content of the BGaN film is up to the highest with 6.1%. 氮化硼镓 金属有机物化学气相沉积 薄膜 boron gallium nitride metal organic chemical vapor deposition films UEYAMA K,MIMURA H,INOUE Y,et al.. Effect of substrate offcut angle on BGaN epitaxial growth [J]. Jpn. J. Appl. Phys., 2016,55(5S):05FD05. BALIGA B J. Gallium nitride devices for power electronic applications [J]. Semicond. Sci. Technol., 2013,28(7): 074011. HADI W A,SHUR M S,O'LEARY S K. Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide:an updated and critical review [J]. J. Mater. Sci. Mater. Electron., 2014,25(11):4675-4713. XING K,WANG J T,WANG L C,et al.. Epitaxial GaN films with ultralow threading dislocation densities grown on an SiO2-masked patterned sapphire substrate [J]. Appl. Phys. Express, 2019,12(10):105501. ABELL J,MOUSTAKAS T D. The role of dislocations as nonradiative recombination centers in InGaN quantum wells [J]. Appl. Phys. Lett., 2008,92(9):091901-1-3. YOU J H,LU J Q,JOHNSON H T. Electron scattering due to threading edge dislocations in n-type wurtzite GaN [J]. J. Appl. Phys., 2006,99(3):033706. GAUTIER S,SARTEL C,HAMADY S O S,et al.. MOVPE growth study of BxGa1-xN on GaN template substrate [J]. Superlat. Microstruct., 2006,40(4-6):233-238. JURKEVIIUS J,MICKEVIIUS J,KADYS A,et al.. Photoluminescence efficiency of BGaN epitaxial layers with high boron content [J]. Phys. B, 2016,492:23-26. WILLIAMS L,KIOUPAKIS E. BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs [J]. Appl. Phys. Lett., 2017,111(21):211107. ATSUMI K,INOUE Y,MIMURA H,et al.. Neutron detection using boron gallium nitride semiconductor material [J]. APL Mater., 2014,2(3):032106-1-6. POLYAKOV A Y,SHIN M,SKOWRONSKI M,et al.. Growth of GaBN ternary solutions by organometallic vapor phase epitaxy [J]. J. Electron. Mater., 1997,26(3):237-242. OUGAZZADEN A,GAUTIER S,MOUDAKIR T,et al.. Bandgap bowing in BGaN thin films [J]. Appl. Phys. Lett., 2008,93(8):083118-1-3. GAUTIER S,PATRIARCHE G,MOUDAKIR T,et al.. Deep structural analysis of novel BGaN material layers grown by MOVPE [J]. J. Cryst. Growth, 2011,315(1):288-291. BAGHDADLI T,HAMADY S O S,GAUTIER S,et al.. Electrical and structural characterizations of BGaN thin films grown by metal-organic vapor-phase epitaxy [J]. Phys. Status Solidi C, 2009,6(S2):S1029-S1032. MALINAUSKAS T,KADYS A,STANIONYTō S,et al.. Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD [J]. Phys. Status Solidi B, 2015,252(5):1138-1141. AKADYS A,MICKEVIIUS J,MALINAUSKAS T,et al.. Optical and structural properties of BGaN layers grown on different substrates [J]. J. Phys.:Appl. Phys., 2015,48(46):465307-1-6. GUNNING B P,MOSELEY M W,KOLESKE D D,et al.. Phase degradation in BxGa1-xN films grown at low temperature by metalorganic vapor phase epitaxy [J]. J. Cryst. Growth, 2017,464:190-196. SAID A,DEBBICHI M,SAID M. Theoretical study of electronic and optical properties of BN,GaN and BxGa1-xN in zinc blende and wurtzite structures [J]. Optik, 2016,127(20):9212-9221. 10.3788/fgxb20204104.0357 TP394.1;TH691.9 国家重点研发计划（2016YFB0401801）;国家自然科学基金（61674068，61734001）;光电材料与技术国家重点实验（中山大学）开放课题（OEMT2018KF08）资助项目 Supported by National Key Research and Development Program(2016YFB0401801);National Natural Science Foundation of China(61674068,61734001);Opened Fund of The State Key Laboratory of Optoelectronic Materials and Technologies(Sun Yat-sen University)(OEMT2018KF08) 2019-12-16 2020-02-06 2020-02-18 2020-04-05 2020-08-11 4 41