MOCVD法制备BGaN薄膜

曹越; 于佳琪; 张立东; 邓高强; 张源涛; 张宝林

doi:10.3788/fgxb20204104.0357

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MOCVD法制备BGaN薄膜

材料合成及性能 | 更新时间：2020-08-12

- MOCVD法制备BGaN薄膜
- Epitaxial Growth of BGaN Films by MOCVD
- 发光学报 2020年41卷第4期页码：357-363
- 作者机构：
  
  吉林大学电子科学与工程学院, 集成光电子学国家重点联合实验室,吉林长春,130012
- 作者简介：
- 基金信息：
  
  国家重点研发计划（2016YFB0401801）();国家自然科学基金（61674068，61734001）();光电材料与技术国家重点实验（中山大学）开放课题（OEM
- DOI：10.3788/fgxb20204104.0357
  中图分类号： TP394.1;TH691.9
- 纸质出版日期：2020-4-5，
  
  网络出版日期：2020-2-18，
  
  收稿日期：2019-12-16，
  
  修回日期：2020-2-6，
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曹越, 于佳琪, 张立东等. MOCVD法制备BGaN薄膜[J]. 发光学报, 2020,41(4): 357-363

CAO Yue, YU Jia-qi, ZHANG Li-dong etc. Epitaxial Growth of BGaN Films by MOCVD[J]. Chinese Journal of Luminescence, 2020,41(4): 357-363
曹越, 于佳琪, 张立东等. MOCVD法制备BGaN薄膜[J]. 发光学报, 2020,41(4): 357-363 DOI： 10.3788/fgxb20204104.0357.

CAO Yue, YU Jia-qi, ZHANG Li-dong etc. Epitaxial Growth of BGaN Films by MOCVD[J]. Chinese Journal of Luminescence, 2020,41(4): 357-363 DOI： 10.3788/fgxb20204104.0357.

摘要

利用金属有机物化学气相沉积（MOCVD）技术，在蓝宝石衬底上进行了BGaN薄膜的外延生长，研究了生长厚度、温度、压力和B/Ⅲ比等条件对BGaN薄膜中B组分的影响。X射线衍射测试结果表明，降低生长温度、压力以及增加B/Ⅲ比，更有利于提高BGaN薄膜中B的并入效率。在800℃、30 kPa及B/Ⅲ比为30%的生长条件下，制备的BGaN薄膜中B组分最高，为6.1%。

Abstract

In this work

we used metal organic chemical vapor deposition (MOCVD) technology to carry out epitaxial growth of BGaN films on sapphire substrates. We studied the influence of growth thickness

temperature

pressure and B/Ⅲ ratio on the boron content of the BGaN films. X-ray diffraction measurement results demonstrate that lowering the growth temperature

pressure and increasing the B/Ⅲ ratio are conductive to improving the incorporation efficiency of B in BGaN films. At the growth conditions of 800 ℃

30 kPa and B/Ⅲ ratio of 30%

the B content of the BGaN film is up to the highest with 6.1%.

关键词

氮化硼镓金属有机物化学气相沉积薄膜

Keywords

boron gallium nitridemetal organic chemical vapor depositionfilms

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