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Ga2O3/GaN/蓝宝石模板上β-Ga2O3薄膜的生长
Growth of β-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template
- 发光学报 2020年41卷第3期 页码：281-287
- 作者机构：
1. 吉林大学 电子科学与工程学院, 集成光电子学国家重点联合实验室,吉林 长春,130012
2. 宽禁带半导体电力电子器件国家重点实验室, 南京电子器件研究所,江苏 南京,210016
- 作者简介：
- 基金信息：国家自然科学基金（61774072，61734001，61674068）();吉林省科技发展计划（20170204045GX）();国家重点研发计划（2016YFB04
DOI：10.3788/fgxb20204103.0281
中图分类号： TP394.1;TH691.9纸质出版日期：2020-3-5，
网络出版日期：2020-1-6，
收稿日期：2019-12-13，
修回日期：2019-12-27，
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焦腾, 李赜明, 王谦等. Ga<sub>2</sub>O<sub>3</sub>/GaN/蓝宝石模板上β-Ga<sub>2</sub>O<sub>3</sub>薄膜的生长[J]. 发光学报, 2020,41(3): 281-287
JIAO Teng, LI Ze-ming, WANG Qian etc. Growth of β-Ga<sub>2</sub>O<sub>3</sub> Thin Films on Ga<sub>2</sub>O<sub>3</sub>/GaN/Sapphire Template[J]. Chinese Journal of Luminescence, 2020,41(3): 281-287
焦腾, 李赜明, 王谦等. Ga<sub>2</sub>O<sub>3</sub>/GaN/蓝宝石模板上β-Ga<sub>2</sub>O<sub>3</sub>薄膜的生长[J]. 发光学报, 2020,41(3): 281-287 DOI： 10.3788/fgxb20204103.0281.
JIAO Teng, LI Ze-ming, WANG Qian etc. Growth of β-Ga<sub>2</sub>O<sub>3</sub> Thin Films on Ga<sub>2</sub>O<sub>3</sub>/GaN/Sapphire Template[J]. Chinese Journal of Luminescence, 2020,41(3): 281-287 DOI： 10.3788/fgxb20204103.0281.
摘要
为获得高质量的-Ga
2
O
3
薄膜，将
c
面蓝宝石上生长的GaN薄膜进行高温氧化制成了Ga
2
O
3
/GaN/蓝宝石模板，进而在模板上利用金属有机化学气相沉积（MOCVD）工艺进行了-Ga
2
O
3
薄膜的同质外延。通过X射线衍射仪、原子力显微镜、场发射扫描电子显微镜等方法对样品的晶体结构、表面形貌等性质进行测试与分析。结果表明，该方法获得的-Ga
2
O
3
薄膜晶体质量受GaN薄膜氧化效果与MOCVD工艺条件等因素影响较大。通过优化实验条件，得到了质量较高的-Ga
2
O
3
薄膜。与蓝宝石上或GaN薄膜上异质外延得到的-Ga
2
O
3
薄膜相比，薄膜的晶体质量明显提高。通过对比不同样品的晶体质量、表面形貌和制备过程，发现该方法成功地将-Ga
2
O
3
薄膜在蓝宝石衬底或GaN/蓝宝石模板上异质外延转化为了Ga
2
O
3
/GaN/蓝宝石模板上的同质外延，有效地减小了-Ga
2
O
3
薄膜和蓝宝石、GaN之间较大的晶格失配和热失配，有利于提高-Ga
2
O
3
薄膜的晶体质量。
Abstract
To obtain high-quality -Ga
2
O
3
thin film
GaN thin film grown on
c
-plane sapphire is made into Ga
2
O
3
/GaN/sapphire template by thermal oxidation
and the -Ga
2
O
3
thin film is grown on the template by metal-organic chemical vapor deposition(MOCVD). The crystal structure and surface morphology of the samples are measured and analyzed by X-ray diffraction
atomic force microscope and field emission scanning electron microscope. The results show that the crystal quality of the -Ga
2
O
3
films is affected by GaN film oxidation effect and MOCVD process conditions greatly. By optimizing the experimental conditions
the high-quality -Ga
2
O
3
thin films are obtained. By comparing with the films grown on sapphire or GaN films
the crystal quality of the -Ga
2
O
3
films is found improved obviously. We find that this method successfully transforms the heteroepitaxy of the -Ga
2
O
3
film on sapphire substrate or GaN/sapphire template into the homoepitaxy of that on Ga
2
O
3
/GaN/sapphire template
effectively reduces the large lattice mismatch and thermal mismatch between -Ga
2
O
3
film
sapphire and GaN
and is beneficial to improve the crystal quality of -Ga
2
O
3
film.
关键词
氧化镓高温氧化金属有机化学气相沉积
Keywords
gallium oxidehigh temperature oxidationmetal-organic chemical vapor deposition
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