Ga2O3/GaN/蓝宝石模板上&beta;-Ga2O3薄膜的生长

焦腾; 李赜明; 王谦; 董鑫; 张源涛; 柏松; 张宝林; 杜国同

doi:10.3788/fgxb20204103.0281

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Ga₂O₃/GaN/蓝宝石模板上β-Ga₂O₃薄膜的生长

材料合成及性能 | 更新时间：2020-08-12

- Ga₂O₃/GaN/蓝宝石模板上β-Ga₂O₃薄膜的生长
- Growth of β-Ga₂O₃ Thin Films on Ga₂O₃/GaN/Sapphire Template
- 发光学报 2020年41卷第3期页码：281-287
- 作者机构：
  
  1. 吉林大学电子科学与工程学院, 集成光电子学国家重点联合实验室,吉林长春,130012
  2. 宽禁带半导体电力电子器件国家重点实验室, 南京电子器件研究所,江苏南京,210016
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61774072，61734001，61674068）();吉林省科技发展计划（20170204045GX）();国家重点研发计划（2016YFB04
- DOI：10.3788/fgxb20204103.0281
  中图分类号：
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焦腾, 李赜明, 王谦, 等. Ga₂O₃/GaN/蓝宝石模板上β-Ga₂O₃薄膜的生长[J]. 发光学报, 2020,41(3):281-287.

JIAO Teng, LI Ze-ming, WANG Qian, et al. Growth of β-Ga₂O₃ Thin Films on Ga₂O₃/GaN/Sapphire Template[J]. Chinese Journal of Luminescence, 2020,41(3):281-287.
焦腾, 李赜明, 王谦, 等. Ga₂O₃/GaN/蓝宝石模板上β-Ga₂O₃薄膜的生长[J]. 发光学报, 2020,41(3):281-287. DOI： 10.3788/fgxb20204103.0281.

JIAO Teng, LI Ze-ming, WANG Qian, et al. Growth of β-Ga₂O₃ Thin Films on Ga₂O₃/GaN/Sapphire Template[J]. Chinese Journal of Luminescence, 2020,41(3):281-287. DOI： 10.3788/fgxb20204103.0281.

摘要

为获得高质量的-Ga,2,O,3,薄膜，将,c,面蓝宝石上生长的GaN薄膜进行高温氧化制成了Ga,2,O,3,/GaN/蓝宝石模板，进而在模板上利用金属有机化学气相沉积（MOCVD）工艺进行了-Ga,2,O,3,薄膜的同质外延。通过X射线衍射仪、原子力显微镜、场发射扫描电子显微镜等方法对样品的晶体结构、表面形貌等性质进行测试与分析。结果表明，该方法获得的-Ga,2,O,3,薄膜晶体质量受GaN薄膜氧化效果与MOCVD工艺条件等因素影响较大。通过优化实验条件，得到了质量较高的-Ga,2,O,3,薄膜。与蓝宝石上或GaN薄膜上异质外延得到的-Ga,2,O,3,薄膜相比，薄膜的晶体质量明显提高。通过对比不同样品的晶体质量、表面形貌和制备过程，发现该方法成功地将-Ga,2,O,3,薄膜在蓝宝石衬底或GaN/蓝宝石模板上异质外延转化为了Ga,2,O,3,/GaN/蓝宝石模板上的同质外延，有效地减小了-Ga,2,O,3,薄膜和蓝宝石、GaN之间较大的晶格失配和热失配，有利于提高-Ga,2,O,3,薄膜的晶体质量。

Abstract

To obtain high-quality -Ga ,2,O,3, thin film, GaN thin film grown on ,c,-plane sapphire is made into Ga,2,O,3,/GaN/sapphire template by thermal oxidation, and the -Ga ,2,O,3, thin film is grown on the template by metal-organic chemical vapor deposition(MOCVD). The crystal structure and surface morphology of the samples are measured and analyzed by X-ray diffraction, atomic force microscope and field emission scanning electron microscope. The results show that the crystal quality of the -Ga ,2,O,3, films is affected by GaN film oxidation effect and MOCVD process conditions greatly. By optimizing the experimental conditions, the high-quality -Ga ,2,O,3, thin films are obtained. By comparing with the films grown on sapphire or GaN films, the crystal quality of the -Ga ,2,O,3, films is found improved obviously. We find that this method successfully transforms the heteroepitaxy of the -Ga ,2,O,3, film on sapphire substrate or GaN/sapphire template into the homoepitaxy of that on Ga,2,O,3,/GaN/sapphire template, effectively reduces the large lattice mismatch and thermal mismatch between -Ga ,2,O,3, film, sapphire and GaN, and is beneficial to improve the crystal quality of -Ga,2,O,3, film.

关键词

氧化镓高温氧化金属有机化学气相沉积

Keywords

gallium oxidehigh temperature oxidationmetal-organic chemical vapor deposition

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Ga2O3/GaN/蓝宝石模板上β-Ga2O3薄膜的生长

Growth of β-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template

DOI：10.3788/fgxb20204103.0281

摘要

Abstract

关键词

Keywords

references

Ga₂O₃/GaN/蓝宝石模板上β-Ga₂O₃薄膜的生长

Growth of β-Ga₂O₃ Thin Films on Ga₂O₃/GaN/Sapphire Template