InGaN/GaN多量子阱蓝光LED外延片的变温光致发光谱

杨超普; 方文卿; 毛清华; 杨岚; 刘彦峰; 李春; 阳帆

doi:10.3788/fgxb20194007.0891

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InGaN/GaN多量子阱蓝光LED外延片的变温光致发光谱

器件制备及器件物理 | 更新时间：2020-08-12

- InGaN/GaN多量子阱蓝光LED外延片的变温光致发光谱
- Temperature-dependent Photoluminescence Spectra of InGaN/GaN Multiple Quantum Wells Blue LED Wafers
- 发光学报 2019年40卷第7期页码：891-897
- 作者机构：
  
  1. 商洛学院化学工程与现代材料学院, 陕西商洛 726000
  2. 南昌大学材料科学与工程学院, 江西南昌 330031
  3. 南昌大学国家硅基LED工程技术研究中心,江西南昌,330047
  4. 安徽工业大学数理科学与工程学院,安徽马鞍山,243032
- 作者简介：
- 基金信息：
  
  国家重点研发计划（2017YFB0403700）();国家自然科学基金（61864008）();安徽省自然科学面上基金（1808085MF205）();陕西省自然科学基
- DOI：10.3788/fgxb20194007.0891
  中图分类号： O433.4;TN312+.8
- 纸质出版日期：2019-7-5，
  
  网络出版日期：2018-11-5，
  
  收稿日期：2018-7-25，
  
  修回日期：2018-10-17，
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杨超普, 方文卿, 毛清华等. InGaN/GaN多量子阱蓝光LED外延片的变温光致发光谱[J]. 发光学报, 2019,40(7): 891-897

YANG Chao-pu, FANG Wen-qing, MAO Qing-hua etc. Temperature-dependent Photoluminescence Spectra of InGaN/GaN Multiple Quantum Wells Blue LED Wafers[J]. Chinese Journal of Luminescence, 2019,40(7): 891-897
杨超普, 方文卿, 毛清华等. InGaN/GaN多量子阱蓝光LED外延片的变温光致发光谱[J]. 发光学报, 2019,40(7): 891-897 DOI： 10.3788/fgxb20194007.0891.

YANG Chao-pu, FANG Wen-qing, MAO Qing-hua etc. Temperature-dependent Photoluminescence Spectra of InGaN/GaN Multiple Quantum Wells Blue LED Wafers[J]. Chinese Journal of Luminescence, 2019,40(7): 891-897 DOI： 10.3788/fgxb20194007.0891.

摘要

利用MOCVD在Al

（0001）衬底上制备InGaN/GaN MQW结构蓝光LED外延片。以400 mW中心波长405 nm半导体激光器作为激发光源，采用自主搭建的100~330 K低温PL谱测量装置，以及350~610 K高温PL测量装置，测量不同温度下PL谱。通过Gaussian分峰拟合研究了InGaN/GaN MQW主发光峰、声子伴线峰、n-GaN黄带峰峰值能量、相对强度、FWHM在100~610 K范围的温度依赖性。研究结果表明:在100~330 K温度范围内，外延片主发光峰及其声子伴线峰值能量与FWHM温度依赖性，分别呈现S与W形变化；载流子的完全热化分布温度约为150 K，局域载流子从非热化到热化分布的转变温度为170~190 K；350~610 K高温范围内，InGaN/GaN MQW主发光峰峰值能量随温度变化满足Varshni经验公式，可在MOCVD外延生长掺In过程中，通过特意降温在线测PL谱，实时推算掺In量，在线监测外延片生长。以上结果可为外延片的PL发光机理研究、高温在线PL谱测量设备开发、掺In量的实时监测等提供参考。

Abstract

A blue light LED epitaxial wafer with InGaN/GaN MQW structure was prepared on an Al

(0001) substrate by MOCVD. The 400 mW semiconductor laser with a center wavelength of 405 nm was used as the excitation light source. The PL-spectrum at different temperatures was measured by the self-built 100-330 K low-temperature PL spectrum measurement device and the 350-610 K high-temperature PL measurement device. The peak energy and the relative intensity of InGaN/GaN MQW main luminescence peak

the phonon concomitant peak and the n-GaN yellow band peak

as well as the temperature dependence of the FWHM in the range of 100-610 K were studied by Gaussian peak differentiating and imitating. The results showed that in the temperature range of 100-330 K

the peak energy of the main luminescence peak and the phonon concomitant peak of the epitaxial wafer

as well as the temperature dependence of the FWHM displayed S and W-shaped changes respectively; the complete heating distribution temperature of the carrier was about 150 K; the transition temperature of local carriers from non-heating to heating distribution was 170-190 K; in the high temperature ranged 350-610 K

the changes in peak energy of InGaN/GaN MQW with temperature variation satisfied the Varshni empirical formula. In the In-doped process of MOCVD epitaxial growth

the PL spectrum could be measured by deliberately cooling the temperature; the amount of In-doped was calculated in real time; and the epitaxial wafer growth was monitored online. The above results can be used for the study of PL luminescence mechanism of epitaxial wafers

development of high-temperature online PL spectrum measurement equipment

real-time monitoring of In-doped and so on.

关键词

GaN多量子阱发光二极管外延光致发光

Keywords

GaNMQWLEDepitaxialphotoluminesecence

references

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