Ni插入层对Ag/p-GaN界面接触性能的影响机理

徐帅; 王光绪; 吴小明; 郭醒; 刘军林; 江风益

doi:10.3788/fgxb20194007.0865

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Ni插入层对Ag/p-GaN界面接触性能的影响机理

材料合成及性能 | 更新时间：2020-08-12

- Ni插入层对Ag/p-GaN界面接触性能的影响机理
- Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance
- 发光学报 2019年40卷第7期页码：865-870
- 作者机构：
  
  1. 南昌大学国家硅基LED工程技术研究中心, 江西南昌 330096
  2. 南昌黄绿照明有限公司, 江西南昌 330096
- 作者简介：
- 基金信息：
  
  国家自然科学基金青年科学基金（61604066）();国家重点研发计划（2016YFB0400600，2016YFB0400601）();国家自然科学基金重点项目（61
- DOI：10.3788/fgxb20194007.0865
  中图分类号： O484.4;O482.31
- 纸质出版日期：2019-7-5，
  
  网络出版日期：2018-11-5，
  
  收稿日期：2018-7-17，
  
  修回日期：2018-10-16，
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徐帅, 王光绪, 吴小明等. Ni插入层对Ag/p-GaN界面接触性能的影响机理[J]. 发光学报, 2019,40(7): 865-870

XU Shuai, WANG Guang-xu, WU Xiao-ming etc. Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance[J]. Chinese Journal of Luminescence, 2019,40(7): 865-870
徐帅, 王光绪, 吴小明等. Ni插入层对Ag/p-GaN界面接触性能的影响机理[J]. 发光学报, 2019,40(7): 865-870 DOI： 10.3788/fgxb20194007.0865.

XU Shuai, WANG Guang-xu, WU Xiao-ming etc. Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance[J]. Chinese Journal of Luminescence, 2019,40(7): 865-870 DOI： 10.3788/fgxb20194007.0865.

摘要

采用"牺牲Ni处理"的方法研究了Ni对Ag/p-GaN界面接触性能的影响机理。利用传输线法（TLM）、紫外分光光度计、X射线光电子能谱（XPS）以及二次离子质谱仪（SIMS）等表征方式对Ag/p-GaN界面层光电性能进行了研究。结果表明，牺牲Ni处理后p-GaN表面仍会残留少量的Ni并以Ni

的形式存在；p-GaN表面Ga 2p3结合能峰位朝低能方向移动了0.3 eV，提高了Ag/p-GaN间的欧姆接触性能。我们认为，界面处的Ni会优先和p-GaN表面Ga

氧化物中的O结合形成Ni

，进而降低了p-GaN表面费米能级，提高了Ag/p-GaN之间的欧姆接触性能。

Abstract

The effect of Ni on the contact performance of Ag/p-GaN interface is studied by the method of Ni-assisted treatment. The photoelectric properties of Ag/p-GaN interfacial are investigated by means of transmission line method(TLM)

UV spectrophotometer(UV)

X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometer(SIMS). The results show that a small amount of Ni remains on the surface of p-GaN after Ni-assisted treatment and exists in the form of Ni

. The binding energy peak of Ga 2p3 on the p-GaN surface shifts 0.3 eV in the direction of low energy

which improves the Ohmic contact performance between Ag/p-GaN after Ni-assisted treatment. In our opinion

the Ni at the interface will preferentially combine with the O of Ga

on the surface of p-GaN to form Ni

thus reducing the Fermi level on the surface of p-GaN and improving the Ohmic contact performance between Ag/p-GaN.

关键词

Ag/p-GaN接触牺牲Ni处理Ni插入层表面费米能级

Keywords

Ag/p-GaN contactNi-assisted treatmentNi interlayersurface Fermi energy

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