不同激光能量涨落对GaAs光电导开关时间抖动的影响

桂淮濛; 施卫

doi:10.3788/fgxb20194006.0803

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不同激光能量涨落对GaAs光电导开关时间抖动的影响

发光学应用及交叉前沿 | 更新时间：2020-08-12

- 不同激光能量涨落对GaAs光电导开关时间抖动的影响
- Effects of Laser Energy Fluctuation on Jitter Time of GaAs Photoconductive Switch
- 发光学报 2019年40卷第6期页码：803-807
- 作者机构：
  
  1. 陕西工业职业技术学院信息工程学院, 陕西咸阳 712000
  2. 西安理工大学理学院, 陕西西安 710048
- 作者简介：
- 基金信息：
  
  科技部国家重点研发计划（2017YFA0701005）();强脉冲辐射环境模拟与效应国家重点实验室基金（SKLIPR1812）();陕西省教育厅科学研究项目计划（17J
- DOI：10.3788/fgxb20194006.0803
  中图分类号： O59
- 纸质出版日期：2019-6-5，
  
  网络出版日期：2018-10-31，
  
  收稿日期：2018-7-9，
  
  修回日期：2018-10-15，
扫描看全文
桂淮濛, 施卫,. 不同激光能量涨落对GaAs光电导开关时间抖动的影响[J]. 发光学报, 2019,40(6): 803-807

GUI Huai-meng, SHI Wei,. Effects of Laser Energy Fluctuation on Jitter Time of GaAs Photoconductive Switch[J]. Chinese Journal of Luminescence, 2019,40(6): 803-807
桂淮濛, 施卫,. 不同激光能量涨落对GaAs光电导开关时间抖动的影响[J]. 发光学报, 2019,40(6): 803-807 DOI： 10.3788/fgxb20194006.0803.

GUI Huai-meng, SHI Wei,. Effects of Laser Energy Fluctuation on Jitter Time of GaAs Photoconductive Switch[J]. Chinese Journal of Luminescence, 2019,40(6): 803-807 DOI： 10.3788/fgxb20194006.0803.

摘要

结合激光能量涨落对输出电脉冲涨落影响的实验，通过理论分析研究了激光能量涨落对GaAs光电导开关时间抖动特性的影响。实验中，当外加偏置电压为2 kV时，使用波长为1 053 nm、脉宽为500 ps的激光触发GaAs光电导开关，在不同的激光能量下测试能量涨落对输出电脉冲涨落的影响，通过对比分析指出激光能量的涨落与输出电脉冲涨落成正比关系。结合对光生载流子输运过程的分析，结果表明随着激光能量涨落的增加，GaAs光电导开关时间抖动也会随之增加，直到激光能量达到GaAs饱和吸收限时，能量的涨落不会再引起开关时间抖动的迅速变化。这一结论为GaAs光电导开关应用于条纹相机中提供了理论基础。

Abstract

Based on the experiment of influence of laser energy fluctuation on output electric pulse fluctuation

the influence of laser energy fluctuation on the jitter time of GaAs photoconductive switch was investigated theoretically. In the experiment

GaAs photoconductive switch was triggered using the wavelength of 1 053 nm and the pulse width of 500 ps laser pulse under the condition of 2 kV bias voltage. The influence of laser energy fluctuation on the output electrical pulse fluctuation was investigated. It is shown that the fluctuation of the laser energy is proportional to the output electrical pulse fluctuation through the contrast analysis. At the same time

it is pointed out that the jitter time of GaAs photoconductive switch increases with the increase of laser energy fluctuation through the analysis of the carrier transport. The fluctuation of energy does not cause the rapid change of switching jitter time with the increase of laser power fluctuation. GaAs photoconductive switch will also increase the zone of timing jitter until the energy reaches GaAs saturated absorption limit.

关键词

GaAs光电导开关时间抖动能量涨落

Keywords

GaAs photoconductive switchjitter timeenergy fluctuation

references

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