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1. 福州大学 平板显示技术国家地方联合工程实验室,福建 福州,350108
2. 福建工程学院 微电子技术研究中心,福建 福州,350118
3. 长春工程技术学院,吉林 长春,130012
纸质出版日期:2019-4-5,
网络出版日期:2019-1-18,
收稿日期:2018-12-27,
修回日期:2019-2-10,
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杨文宇, 张国成, 崔宇等. 喷墨打印金属氧化物异质结晶体管[J]. 发光学报, 2019,40(4): 497-503
YANG Wen-yu, ZHANG Guo-cheng, CUI Yu etc. Inkjet Printed Metal Oxide Heterojunction Thin-film Transistor[J]. Chinese Journal of Luminescence, 2019,40(4): 497-503
杨文宇, 张国成, 崔宇等. 喷墨打印金属氧化物异质结晶体管[J]. 发光学报, 2019,40(4): 497-503 DOI: 10.3788/fgxb20194004.0497.
YANG Wen-yu, ZHANG Guo-cheng, CUI Yu etc. Inkjet Printed Metal Oxide Heterojunction Thin-film Transistor[J]. Chinese Journal of Luminescence, 2019,40(4): 497-503 DOI: 10.3788/fgxb20194004.0497.
通过用喷墨打印制备的ZnO/IGZO异质结代替单层半导体沟道克服了氧化物缺陷导致的电子传输限制。ZnO/IGZO异质结晶体管表现出带状电子传输,迁移率比单层IGZO或ZnO TFT分别增大了约9倍和19倍,达到6.42 cm
2
/(Vs)。开关比分别增大了2个和4个数量级,达到1.810
8
。性能的显著改善源自于IGZO和ZnO异质界面间由于导带的大偏移量而形成的二维电子气。
In this work
the electron transport limitations caused by oxide defects was overcome by replacing single layer semiconductor channel with a ZnO/IGZO heterojunction prepared by inkjet printing. It was found that ZnO/IGZO transistor exhibited banded electron transport
and the mobility was increased by about 9 times and 19 times
respectively
to 6.42 cm
2
/(Vs) compared with single layer IGZO or ZnO TFT. The switch ratio was increased by 2 and 4 orders of magnitude respectively
which can reach 1.810
8
. Significant improvement in performance was associated with the two-dimensional electron gas formed between the IGZO and ZnO heterointerfaces due to the large offset of the conduction band.
金属氧化物半导体喷墨打印异质结二维电子气
metal oxide semiconductorinkjet printingheterojunctiontwo-dimensional electron gas
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