衬底温度对共蒸发法制备Cu<sub>2</sub>ZnSnSe<sub>4</sub>太阳电池的影响

孙顶; 李玉丽; 王凌群; 张玉红; 刘航; 郭秀娟; 迟耀丹; 张力

doi:10.3788/fgxb20194003.0334

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衬底温度对共蒸发法制备Cu₂ZnSnSe₄太阳电池的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 衬底温度对共蒸发法制备Cu₂ZnSnSe₄太阳电池的影响
- Influence of Substrate Temperature on Cu₂ZnSnSe₄ Thin Film Solar Cells Fabricated by Co-evaporation Process
- 发光学报 2019年40卷第3期页码：334-339
- 作者机构：
  
  1. 吉林建筑大学电气与计算机学院,吉林长春,130118
  2. 南开大学光电子薄膜器件与技术研究所, 天津 300071
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61705077）;吉林省教育厅"十三五"科学技术项目（JJKH20180591KJ）资助
- DOI：10.3788/fgxb20194003.0334
  中图分类号： TB34;O482.31
- 纸质出版日期：2019-3-5，
  
  网络出版日期：2018-8-23，
  
  收稿日期：2018-5-21，
  
  修回日期：2018-10-16，
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孙顶, 李玉丽, 王凌群等. 衬底温度对共蒸发法制备Cu₂ZnSnSe₄太阳电池的影响[J]. 发光学报, 2019,40(3): 334-339

SUN Ding, LI Yu-li, WANG Ling-qun etc. Influence of Substrate Temperature on Cu₂ZnSnSe₄ Thin Film Solar Cells Fabricated by Co-evaporation Process[J]. Chinese Journal of Luminescence, 2019,40(3): 334-339
孙顶, 李玉丽, 王凌群等. 衬底温度对共蒸发法制备Cu₂ZnSnSe₄太阳电池的影响[J]. 发光学报, 2019,40(3): 334-339 DOI： 10.3788/fgxb20194003.0334.

SUN Ding, LI Yu-li, WANG Ling-qun etc. Influence of Substrate Temperature on Cu₂ZnSnSe₄ Thin Film Solar Cells Fabricated by Co-evaporation Process[J]. Chinese Journal of Luminescence, 2019,40(3): 334-339 DOI： 10.3788/fgxb20194003.0334.

摘要

采用共蒸发法在不同衬底温度下沉积Cu

ZnSnSe

（简称CZTSe）薄膜，分析了衬底温度对CZTSe材料性质及电池性能的影响。研究表明:当衬底温度较低时（380℃），CZTSe薄膜中含有SnSe

使电池失效；随着衬底温度的升高，CZTSe薄膜的结晶质量明显提升，电池开路电压增加。但当衬底温度达到460℃时，电池的转换效率反而下降；结合CZTSe的生长机理及器件模型分析了电池效率下降可能的原因。最终在衬底温度420℃的条件下制备出效率为3.12%（有效面积0.34 cm

）的CZTSe太阳电池。

Abstract

Substrate temperature has very important influences on the performance of Cu

ZnSnSe

(CZTSe) thin film solar cells. In this paper

CZTSe absorbers and solar cells prepared by co-evaporation process at different substrate temperatures are investigated. XRD results show additional reflections of SnSe

of films deposited at substrate temperature(380℃). SEM measurements reveal that the quality of crystallization of CZTSe films improves with increasing substrate temperatures; meanwhile the open circuit voltage increases due to decreased grain-boundary recombination. However

J-V

tests show that the efficiency of CZTSe solar cells fabricated at 460℃ is lower. The reason might be that CZTSe film growth starts with the formation of ZnSe at higher substrate temperature (460℃). And the ZnSe could form a barrier at the back contact which could reduce the short circuit current and fill factor. The best solar cell with an efficiency of 3.12% is obtained at medium substrate temperature of 420℃(active area 0.34 cm

关键词

太阳电池铜锌锡硒共蒸发温度

Keywords

solar cellsCZTSeco-evaporationtemperature

references

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衬底温度对共蒸发法制备Cu2ZnSnSe4太阳电池的影响

Influence of Substrate Temperature on Cu2ZnSnSe4 Thin Film Solar Cells Fabricated by Co-evaporation Process

DOI：10.3788/fgxb20194003.0334

摘要

Abstract

关键词

Keywords

references

衬底温度对共蒸发法制备Cu₂ZnSnSe₄太阳电池的影响

Influence of Substrate Temperature on Cu₂ZnSnSe₄ Thin Film Solar Cells Fabricated by Co-evaporation Process