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集成光电子学国家重点联合实验室 吉林大学电子科学与工程学院,吉林 长春,130012
纸质出版日期:2018-10-5,
网络出版日期:2018-4-24,
收稿日期:2018-1-25,
修回日期:2018-3-24,
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徐德前, 庄仕伟, 马雪等. 生长温度对MOCVD外延ZnO纳米结构的影响[J]. 发光学报, 2018,39(10): 1425-1430
XU De-qian, ZHUANG Shi-wei, MA Xue etc. Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD[J]. Chinese Journal of Luminescence, 2018,39(10): 1425-1430
徐德前, 庄仕伟, 马雪等. 生长温度对MOCVD外延ZnO纳米结构的影响[J]. 发光学报, 2018,39(10): 1425-1430 DOI: 10.3788/fgxb20183910.1425.
XU De-qian, ZHUANG Shi-wei, MA Xue etc. Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD[J]. Chinese Journal of Luminescence, 2018,39(10): 1425-1430 DOI: 10.3788/fgxb20183910.1425.
为了探究生长温度对外延ZnO纳米结构的影响,得到ZnO纳米结构可控生长的生长温度条件。利用金属有机化学气相沉积(MOCVD)方法,设计并获得了不同生长温度的ZnO外延样品,并对所有样品进行了表面形貌、光学特性、电学特性表征和结晶质量表征。实验结果表明:600℃生长的ZnO纳米柱横向尺寸最小,为65 nm左右,其光学特性也相对较好,晶体衍射峰的半峰宽最小,为0.165,晶粒尺寸最大,为47.6 nm;电学性质相对最优的为640℃生长的ZnO样品,霍尔迁移率高达23.5 cm
2
/(Vs)。通过结果分析发现,生长温度能影响外延ZnO的生长模式,从而影响ZnO的形貌、光学、电学和晶体质量等特性。
To investigate the effect of growth temperature on epitaxial ZnO nanostructures and optimize the growth temperature conditions for controlled growth of ZnO nanostructures
ZnO epitaxial samples with different growth temperatures were designed and obtained by metal organic chemical vapor deposition (MOCVD). All the samples were characterized by surface morphology
optical
electrical and crystal quality characterizations. The experimental results show that the ZnO nanorods grown at 600℃ have the smallest transverse dimension of about 65 nm
which the optical properties are the best. Its FWHM of the diffraction peak is the smallest of 0.165 with the largest grain size of 47.6 nm. Among these samples
the sample grown at 640℃ has the relatively optimal electrical property
with the Hall mobility of 23.5 cm
2
/(Vs). Through the analysis of the results
it is found that the growth temperature can affect the growth mode of epitaxial ZnO and thus the morphology
optical
electrical and crystal properties of ZnO.
ZnOMOCVD生长温度纳米结构
ZnOMOCVDsubstrate temperaturenanostructures
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