C-V法研究温度对GaN基蓝光二极管pn结的影响

王春安; 符斯列; 刘柳; 丁罗城; 李俊贤; 鲍佳怡

doi:10.3788/fgxb20183910.1417

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C-V法研究温度对GaN基蓝光二极管pn结的影响

器件制备及器件物理 | 更新时间：2020-08-12

- C-V法研究温度对GaN基蓝光二极管pn结的影响
- Effect of Temperature on The pn Structure of GaN-based LED by C-V Measurement
- 发光学报 2018年39卷第10期页码：1417-1424
- 作者机构：
  
  1. 华南师范大学华南先进光电子研究院,广东广州,510006
  2. 华南师范大学物理与电信工程学院,广东广州,510006
  3. 广东技术师范学院电子与信息工程学院,广东广州,510665
- 作者简介：
- 基金信息：
  
  国家自然科学基金（10575039）();广东省自然科学基金（S2013010012548）资助项目()
- DOI：10.3788/fgxb20183910.1417
  中图分类号： TN383+.1;TN312+.8
- 纸质出版日期：2018-10-5，
  
  网络出版日期：2018-4-24，
  
  收稿日期：2018-1-29，
  
  修回日期：2018-4-4，
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王春安, 符斯列, 刘柳等. C-V法研究温度对GaN基蓝光二极管pn结的影响[J]. 发光学报, 2018,39(10): 1417-1424

WANG Chun-an, FU Si-lie, LIU Liu etc. Effect of Temperature on The pn Structure of GaN-based LED by C-V Measurement[J]. Chinese Journal of Luminescence, 2018,39(10): 1417-1424
王春安, 符斯列, 刘柳等. C-V法研究温度对GaN基蓝光二极管pn结的影响[J]. 发光学报, 2018,39(10): 1417-1424 DOI： 10.3788/fgxb20183910.1417.

WANG Chun-an, FU Si-lie, LIU Liu etc. Effect of Temperature on The pn Structure of GaN-based LED by C-V Measurement[J]. Chinese Journal of Luminescence, 2018,39(10): 1417-1424 DOI： 10.3788/fgxb20183910.1417.

摘要

采用

法，根据

-2

曲线和

-3

曲线，并结合

幂律指数

，分析了

=25~-195℃温度范围内，温度变化对GaN基蓝光发光二极管pn结类型的影响。实验结果表明:当

为25℃和-50℃时，

-2

呈明显的线性关系，同时幂律指数

为0.5，说明该温度范围内的pn结类型为严格的突变结；而温度降低至-100℃时，

值变为0.45，说明pn结类型开始发生变化；当温度继续降低至-150℃和-195℃时，幂律指数

分别为0.30和0.28，说明pn结类型已经发生了变化，变为非突变非缓变结。造成这一现象的原因是低温导致的载流子冻析效应，以及晶体的缺陷和界面态形成的局域空间电荷区在低温环境下，影响了pn结原来的空间电荷分布，并改变了pn结类型。

Abstract

Capacitance-voltage(

) measurement is a useful method for studying of pn junction. In this paper

the

measurement was applied to analyze the influence of temperature on the type of pn junction of GaN-base LED in a temperature range from 25℃ to -195℃ according to

-2

curve

-3

curve and power law index

. The experimental results showed that the change of temperature will have an effect on the structure of junction. When the temperatures are 25℃ and -50℃

respectively

there was a significant linear relationship for

-2

and the index

was 0.5

which indicating an abrupt junction in a temperature range from 25℃ to -50℃. When the temperature was cooled down to

=-100℃

the structural type of pn junction began to change and the index

was 0.45. When the temperature continued to decrease to

=-150℃ and -195℃

the index

became 0.30 and 0.28

corresponding to a non-abrupt and non-linear junction. The possible explanations of such phenomenon were low-temperature carrier freeze effect

and the localized space charge region produced by crystal defects and interface states. The enhancement of localized space charge region finally affected the structure of pn junction in low temperature environment.

关键词

GaN基蓝光二极管pn结特性电容-电压法幂律关系

Keywords

GaN-based blue light emitting diodespn junctionC-V measurementpower-law

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