Eu掺杂GaN薄膜的阴极荧光特性

韩晶晶; 王晓丹; 夏永禄; 陈飞飞; 李祥; 毛红敏

doi:10.3788/fgxb20183909.1268

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Eu掺杂GaN薄膜的阴极荧光特性

材料合成及性能 | 更新时间：2020-08-12

- Eu掺杂GaN薄膜的阴极荧光特性
- Cathodoluminescence of Eu-implanted GaN Thin Films
- 发光学报 2018年39卷第9期页码：1268-1271
- 作者机构：
  
  1. 江苏省微纳热流技术与能源应用重点实验室苏州科技大学数理学院,江苏苏州,215009
  2. 中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州,215123
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61306004，51002179）();江苏省自然科学基金（BK20130263）();江苏省十三五重点学科（20168765）();苏州科技大学科
- DOI：10.3788/fgxb20183909.1268
  中图分类号： O482.31
- 纸质出版日期：2018-9-5，
  
  收稿日期：2018-4-10，
  
  修回日期：2018-5-30，
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韩晶晶, 王晓丹, 夏永禄等. Eu掺杂GaN薄膜的阴极荧光特性[J]. 发光学报, 2018,39(9): 1268-1271

HAN Jing-jing, WANG Xiao-dan, XIA Yong-lu etc. Cathodoluminescence of Eu-implanted GaN Thin Films[J]. Chinese Journal of Luminescence, 2018,39(9): 1268-1271
韩晶晶, 王晓丹, 夏永禄等. Eu掺杂GaN薄膜的阴极荧光特性[J]. 发光学报, 2018,39(9): 1268-1271 DOI： 10.3788/fgxb20183909.1268.

HAN Jing-jing, WANG Xiao-dan, XIA Yong-lu etc. Cathodoluminescence of Eu-implanted GaN Thin Films[J]. Chinese Journal of Luminescence, 2018,39(9): 1268-1271 DOI： 10.3788/fgxb20183909.1268.

摘要

通过MOCVD方法在蓝宝石衬底上生长GaN薄膜，利用离子注入方法将Eu

离子注入到GaN基质中。X射线衍射结果表明：经过退火处理后，修复了部分离子注入所导致的晶格损伤。利用阴极荧光光谱可得到GaN∶Eu

材料在623 nm处有很强的红光发射，该发射峰来源于Eu

离子的内部4f能级跃迁。另外，Eu

离子注入会在样品中引入电荷转移态，产生408 nm附近的发光。退火处理有助于获得更强的电荷转移态发光和Eu离子特征发光。GaN基质的黄光峰与Eu离子之间存在能量交换，将能量传递给Eu离子，促进Eu离子发光。

Abstract

GaN thin films were grown on sapphire substrate by MOCVD method. Eu

ions were implanted into GaN thin films by ion implantation. After the films were annealed

the crystal quality was improved partly according to X-ray diffraction measurements. The strong red light emission at 623 nm can be observed in the cathodoluminescence spectrum

and is attributed to the internal 4f transition of Eu

ions. In addition

the charge transfer state is introduced by ion implantation

results in a luminescence peak at 408 nm. It is found that annealing can help to promote the charge transfer state luminescence and Eu ions luminescence. There is an energy transfer from the yellow peak of GaN matrix to the Eu ions.

关键词

氮化镓阴极荧光铕发光能量传递

Keywords

gallium nitridecathodoluminescenceeuropiumluminescenceenergy transfer

references

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TANAKA M, MORISHIMA S, BANG H, et al.. Low-energy charge-transfer state and optical properties of Eu3+-doped GaN[J]. Phys. Status Solidi C, 2003(7):2639-2643.

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MO Y J, WANG X D, YANG M M, et al.. Temperature-dependent cathodoluminescence investigation of Er-implanted GaN thin films[J]. Phys. Stat. Sol. (b):Solid State Phys., 2016, 253(3):515-520.

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