GaSb/InSb/InP异质结构的漏电流机制

徐佳新; 徐德前; 庄仕伟; 李国兴; 张源涛; 董鑫; 吴国光; 张宝林

doi:10.3788/fgxb20183908.1143

您当前的位置：

首页 >

文章列表页 >

GaSb/InSb/InP异质结构的漏电流机制

器件制备及器件物理 | 更新时间：2020-08-12

- GaSb/InSb/InP异质结构的漏电流机制
- Leakage Current Mechanism of GaSb/InSb/InP Heterostructure
- 发光学报 2018年39卷第8期页码：1143-1150
- 作者机构：
  
  吉林大学电子科学与工程学院集成光电子学国家重点实验室,吉林长春,130012
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61574069）资助项目()
- DOI：10.3788/fgxb20183908.1143
  中图分类号： TP394.1;TH691.9
- 纸质出版日期：2018-8-5，
  
  网络出版日期：2018-4-16，
  
  收稿日期：2018-1-2，
  
  修回日期：2018-3-6，
扫描看全文
徐佳新, 徐德前, 庄仕伟等. GaSb/InSb/InP异质结构的漏电流机制[J]. 发光学报, 2018,39(8): 1143-1150

XU Jia-xin, XU De-qian, ZHUANG Shi-wei etc. Leakage Current Mechanism of GaSb/InSb/InP Heterostructure[J]. Chinese Journal of Luminescence, 2018,39(8): 1143-1150
徐佳新, 徐德前, 庄仕伟等. GaSb/InSb/InP异质结构的漏电流机制[J]. 发光学报, 2018,39(8): 1143-1150 DOI： 10.3788/fgxb20183908.1143.

XU Jia-xin, XU De-qian, ZHUANG Shi-wei etc. Leakage Current Mechanism of GaSb/InSb/InP Heterostructure[J]. Chinese Journal of Luminescence, 2018,39(8): 1143-1150 DOI： 10.3788/fgxb20183908.1143.

摘要

为提高InSb红外探测器室温下的工作性能，设计了GaSb/InSb/InP异质结构，并对结构中俄歇复合与肖克莱-瑞德复合两种复合机制对漏电流的影响进行研究。利用TCAD仿真工具对InSb探测器件进行建模，分析得到能带结构与载流子分布。以能带参数为基础，根据连续性方程，结合漂移扩散模型，分析了俄歇复合在反偏压下的衰减效应，并综合肖克莱-瑞德复合的影响，计算出不同缺陷浓度下器件的漏电流。利用低压金属有机化学气相沉积（LP-MOCVD）技术制备GaSb/InSb/InP异质外延样品，对其漏电流进行测试，并与仿真结果进行对比分析。实验结果表明，计算结果与实验结果一致，器件工作性能的主要限制为肖克莱-瑞德复合机制，器件的漏电流为0.26 Acm

-2

，品质因子

为0.1 cm

。相比于同质InSb结构，器件的

提高了一个数量级，已接近实用化水平。

Abstract

In order to improve the performance of InSb infrared photo detectors operating at room temperature

a hetero-junction structure of GaSb/InSb/InP was proposed

and the contribution of Auger mechanism and Shockley-Read-Hall(SRH) mechanism to the leakage current was investigated. A theoretical model was established using TCAD tools

to obtain the band structure and carrier distribution. Then a simulation of the suppression of Auger mechanism under reverse bias and the total leakage current including Shockley-Read mechanism with different impurity concentrations was proceeded. The simulation was based on the carrier continuity equations

combined with the drift-diffusion transport model. Finally

samples were prepared using LP-MOCVD technique and a test of leakage current was carried out

and an analysis of the theoretical model and experiment data was presented. Experimental results indicate that the main limitation of the devices' performance is SRH mechanism

and there is a well fit of the theoretical model with the experiment data. The leakage current of the sample is 0.26 Acm

-2

and

is 0.1 cm

of the device increases by an order of magnitude compared to the homo-junction structure

and the device is close to practical level.

关键词

InSb红外探测器非制冷复合机制漏电流

Keywords

InSbinfrared detectorun-cooledrecombination mechanismleakage current

references

王国伟, 徐应强, 牛智川. 新型低维结构锑化物红外探测器的研究与挑战[J]. 中国科学:物理学力学天文学, 2014, 44(4):368-389. WANG G W, XU Y Q, NIU Z C. Research and challenge of new low dimensional structure antimonide infrared detector[J]. Scientia Sinica(Physica Mechanica & Astronomica), 2014, 44(4):368-389. (in Chinese)

ROGALSKI A. Material considerations for thirdgeneration infrared photon detectors[J]. Infrared Phys. Technol., 2007, 50(2-3):240-252.

冯涛, 金伟其, 司俊杰. 非制冷红外焦平面探测器及其技术发展动态[J]. 红外技术, 2015, 37(3):177-184. FENG T, JIN Q W, SI J J. Uncooled infrared FPA-a review and forecast[J]. Infrared Technol., 2015, 37(3):177-184. (in Chinese)

KLIPSTEIN P C, AVNON E, AZULAI D, et al.. Type Ⅱ superlattice technology for LWIR detectors[C]. Infrared Technology and Applications XLⅡ, International Society for Optics and Photonics, San Francisco, United States, 2016, 9819:98190T.

李彦波, 刘超, 张杨, 等. 锑化物超晶格红外探测器的研究进展[J]. 固体电子学研究进展, 2010, 30(1):11-17. LI Y B, LIU C, ZHANG Y, et al.. Research progress in Sb-based superlattice infrared detectors[J]. Res. Prog. SSE, 2010, 30(1):11-17. (in Chinese)

ITO M, WADA O. Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSix contacts[J]. IEEE J. Quant. Electron., 1986, 22(7):1073-1077.

CHENG Y, IKKU Y, TAKENAKA M, et al.. Low-dark-current waveguide InGaAs metal-semiconductor-metal photodetector monolithically integrated with InP grating coupler on Ⅲ-Ⅴ CMOS photonics platform[J]. Jpn. J. Appl. Phys., 2016, 55(4S):04EH01.

MAIMON S, WICKS G W. NBn detector, an infrared detector with reduced dark current and higher operating temperature[J]. Appl. Phys. Lett., 2006, 89(15):151109.

PEREZ J P, EVIRGEN A, ABAUTRET J, et al.. MWIR InSb detector with nBn architecture for high operating temperature[C]. Quantum Sensing and Nanophotonic Devices XⅡ. International Society for Optics and Photonics, Baltimore, United States, 2015, 9370:93700N.

SOIBEL A, TING D Z, HILL C J, et al.. Mid-wavelength infrared InAsSb/InSb nBn detector with extended cut-off wavelength[J]. Appl. Phys. Lett., 2016, 109(10):103505.

ASHLEY T, ELLIOTT C T, GORDON N T, et al.. Room temperature narrow gap semiconductor diodes as sources and detectors in the 5-10m wavelength region[J]. J. Cryst. Growth, 1996, 159(1-4):1100-1103.

赵旭, 缪国庆, 张志伟, 等. 新型复合盖层延伸波长InGaAs红外探测器结构优化设计[J]. 发光学报, 2015, 36(1):75-79. ZHAO X, MIAO G Q, ZHANG Z W, et al.. Structure design and optimization of novel composite cap extended wavelength InGaAs infrared detector[J]. Chin. J. Lumin., 2015, 36(1):75-79. (in Chinese)

ASHLEY T, ELLIOTTC T. Nonequilibrium devices for infra-red detection[J]. Electron. Lett., 1985, 21(10):451-452.

EHRENREICH H. Band structure and transport properties of some 3-5 compounds[J]. J. Appl. Phys., 1961, 32(10):2155-2166.

SIJER?I? E, MUELLER K, PEJ?INOV? B. Simulation of InSb devices using drift-diffusion equations[J]. Solid-state Electron., 2005, 49(8):1414-1421.

MADELUNG O, Semiconductors:Data Handbook[M]. 3rd ed. Berlin:Springer Science & Business Media, 2004.

BEATTIE A R, WHITE A M. An analytic approximation with a wide range of applicability for electron initiated Auger transitions in narrow-gap semiconductors[J]. J. Appl. Phys., 1996, 79(2):802-813.

CHAZAPIS V, BLOM H A, VODOPYANOV K L, et al.. Midinfrared picosecond spectroscopy studies of Auger recombination in InSb[J]. Phys. Rev. B, 1995, 52(4):2516-2521.

孟宪章, 康昌鹤. 半导体物理学[M]. 长春:吉林大学出版社, 1993. MENG X Z, KANG C H. Semiconductor Physics[M]. Changchun:Jilin University Press, 1993. (in Chinese)

HOLLIS J E L, CHOO S C, HEASELL E L. Recombination centers in InSb[J]. J. Appl. Phys., 1967, 38(4):1626-1636.

NOTT G J, FINDLAY P C, CROWDER J G, et al.. Direct determination of Shockley-Read-Hall trap density in InSb/InAlSb detectors[J]. J. Phys.:Condensed Matter, 2000, 12(50):731-734.

LUNDSTROM M. Fundamentals of Carrier Transport[M]. 2nd ed. London:Cambridge University Press, 2002.

李占国, 刘国军, 李梅, 等. 缓冲层对InSb/GaAs薄膜质量的影响[J]. 发光学报, 2007, 28(4):546-550. LI Z G, LIU G J, LI M, et al.. Effect of buffer layer on the quality of InSb/GaAs thin films[J]. Chin. J. Lumin., 2007, 28(4):546-550. (in Chinese)

陆大成, 段树坤. 金属有机化合物气相外延基础及应用[M]. 北京:科学出版社, 2009. LU D C, DUAN S K. Fundamentals and Application of Metal Organic Chemical Vapor Deposition[M]. Beijing:Science Press, 2009. (in Chinese)

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

载流子复合机制对InGaN多量子阱蓝光LED调制带宽的影响

新型复合盖层延伸波长InGaAs红外探测器结构优化设计