不同钝化结构对非极性AlGaN-MSM紫外探测器性能的提升

贾辉; 梁征; 张玉强; 石璐珊

doi:10.3788/fgxb20183907.0997

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不同钝化结构对非极性AlGaN-MSM紫外探测器性能的提升

器件制备及器件物理 | 更新时间：2020-08-12

- 不同钝化结构对非极性AlGaN-MSM紫外探测器性能的提升
- Performance Enhancement of Nonpolar AlGaN-MSM Ultraviolet Photodetetors by Different Passivation Layers
- 发光学报 2018年39卷第7期页码：997-1001
- 作者机构：
  
  1. 公安海警学院基础部,浙江宁波,315801
  2. 宁波科技信息研究院研究中心,浙江宁波,315040
- 作者简介：
- 基金信息：
  
  浙江省教育厅一般科研项目（Y201737504）资助()
- DOI：10.3788/fgxb20183907.0997
  中图分类号： TN304.2
- 纸质出版日期：2018-7-5，
  
  网络出版日期：2018-3-23，
  
  收稿日期：2017-11-1，
  
  修回日期：2018-1-18，
扫描看全文
贾辉, 梁征, 张玉强等. 不同钝化结构对非极性AlGaN-MSM紫外探测器性能的提升[J]. 发光学报, 2018,39(7): 997-1001

JIA Hui, LIANG Zheng, ZHANG Yu-qiang etc. Performance Enhancement of Nonpolar AlGaN-MSM Ultraviolet Photodetetors by Different Passivation Layers[J]. Chinese Journal of Luminescence, 2018,39(7): 997-1001
贾辉, 梁征, 张玉强等. 不同钝化结构对非极性AlGaN-MSM紫外探测器性能的提升[J]. 发光学报, 2018,39(7): 997-1001 DOI： 10.3788/fgxb20183907.0997.

JIA Hui, LIANG Zheng, ZHANG Yu-qiang etc. Performance Enhancement of Nonpolar AlGaN-MSM Ultraviolet Photodetetors by Different Passivation Layers[J]. Chinese Journal of Luminescence, 2018,39(7): 997-1001 DOI： 10.3788/fgxb20183907.0997.

摘要

在

面蓝宝石衬底上，采用金属有机化学气相沉积（MOCVD）法高温生长了未掺杂非极性AlGaN半导体薄膜，在此基础上制备了金属-半导体-金属（MSM）结构的紫外探测器。系统研究了在AlGaN半导体薄膜表面分别磁控溅射SiO

纳米颗粒与SiO

钝化层两种钝化手段对非极性AlGaN-MSM结构的紫外探测器性能的影响。实验结果表明：磁控溅射SiO

纳米颗粒钝化或SiO

钝化层两种手段都能提升AlGaN-MSM结构紫外探测器性能。暗电流测试表明，SiO

纳米颗粒和SiO

钝化层可使器件暗电流下降1~2个数量级，达到nA量级。光谱响应测试发现，在5 V偏压下，探测器在300 nm处具有陡峭的截止边，这表明其具有很好的深紫外特性，光谱响应提高了10

倍，紫外可见抑制比高达10

。

Abstract

The metal-semiconductor-metal(MSM) structure ultraviolet(UV) photodetector was fabricated on the nonpolar AlGaN grown on

-sapphire substrates by metalorganic chemical vapor deposition(MOCVD) using high temperature treatments. The effects of passivation layers by adding SiO

nanoparticles(SiO

-NPs) or SiO

layers (SiO

-Ls) on optical and electrical properties of the nonpolar AlGaN-MSM UV photodetector were investigated systematically. The results indicate that the surface passivation of SiO

is an important way to enhance the UV performance of the nonpolar AlGaN-MSM UV photodetector. The fabricated devices are characterized by measurements of the dark

I-V

characteristic and the spectral response. It was found that the dark current of the AlGaN-MSM UV photodetector decreased by 1-2 orders of magnitude by SiO

-NPs or by SiO

-L

which can lower to the order of nA. The detector exhibits a sharp cut-off wavelength at about 300 nm

the spectral response is improved 10

times and the ratio of UV to visible reaches as high as 10

关键词

钝化非极性AlGaNMSM紫外探测器

Keywords

passivationnonpolar AlGaNMSMUV photodetectors

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