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长春理工大学 高功率半导体激光国家重点实验室,吉林 长春,130022
纸质出版日期:2018-7-5,
网络出版日期:2018-3-23,
收稿日期:2017-11-1,
修回日期:2018-3-2,
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张晓磊, 薄报学, 张哲铭等. 烧结空洞对半导体激光器热分布的影响[J]. 发光学报, 2018,39(7): 983-990
ZHANG Xiao-lei, BO Bao-xue, ZHANG Zhe-ming etc. Thermal Impact of High Power Semiconductor Laser with Voids in Solder Layer[J]. Chinese Journal of Luminescence, 2018,39(7): 983-990
张晓磊, 薄报学, 张哲铭等. 烧结空洞对半导体激光器热分布的影响[J]. 发光学报, 2018,39(7): 983-990 DOI: 10.3788/fgxb20183907.0983.
ZHANG Xiao-lei, BO Bao-xue, ZHANG Zhe-ming etc. Thermal Impact of High Power Semiconductor Laser with Voids in Solder Layer[J]. Chinese Journal of Luminescence, 2018,39(7): 983-990 DOI: 10.3788/fgxb20183907.0983.
在半导体激光器芯片与热沉的焊接过程中不可避免地会在焊料层产生一些空洞,而空洞会在铟的电迁移以及电热迁移作用下慢慢变大,使芯片局部温度迅速上升,进而影响半导体激光器的性能。针对10 W的808 nm单管焊装半导体激光器建立三维有限元模型,分别模拟计算了空洞面积、空洞厚度和空洞位置与结温的关系。芯片出光面边缘的有源区区域形成的空洞对芯片的结温影响更为显著,最后得到空洞面积与器件结温的关系,并表明对空洞率控制的重要性。
Semiconductor laser chip and heat sink in the welding process will inevitably produce some holes in the solder layer. These voids will become larger in the electromigration and electromigration of indium. The local temperature of the chip rises rapidly
and affects the performance of semiconductor lasers. A three-dimensional finite element model of 808 nm single-tube welding semiconductor lasers with power of 10 W was established
and the relationship between void area
void thickness and void position was calculated. The results show that the voids formed in the active region of the edge of the chip have a more significant influence on the junction temperature of the chip. Finally
the relationship between cavity area and junction temperature was obtained. The importance of void ratio control was also demonstrated.
热特性空洞有限元结温
thermal characteristicsvoidsfinite elementjunction temperature
OU F, LI X Y, LIU B Y, et al.. Enhanced radiation loss-based radial-waveguide-coupled electrically pumped microresonator lasers with single-directional output[J]. Opt. Lett., 2010, 35(10):1722-1724.
潘碧玮, 余力强, 陆丹, 等. 20 kHz窄线宽光纤光栅外腔半导体激光器[J]. 中国激光, 2015, 42(5):0502007. PAN B W, YU L Q, LU D, et al.. 20 kHz narrow linewidth fiber Bragg grating external cavity semiconductor laser[J]. Chin. J. Lasers, 2015, 42(5):0502007. (in Chinese)
方金祥, 董世运, 徐滨士, 等. 考虑固态相变的激光熔覆成形应力场有限元分析[J]. 中国激光, 2015, 42(5):0502009. FANG J X, DONG S Y, XU B S, et al.. Study of stresses of laser metal deposition using FEM considering phase transformation effects[J]. Chin. J. Lasers, 2015, 42(5):0502009. (in Chinese)
LIU X Y, MA H, YU D Q, et al.. Optimal design analysis for thermal performance of high power 2.5D package[J]. J. Semicond., 2016, 37(3):110-114.
CRUMP P. Joule-class 940-nm diode laser bars for millisecond pulse applications[J]. IEEE Photon. Technol. Lett., 2015, 27(15):1663-1666.
PIPREK J, LI Z M S. On the importance of non-thermal far-field blooming in broad-area high-power laser diodes[J]. Appl. Phys. Lett., 2013, 102(22):221110-1-4.
JIA G N. Laser three-dimensional printing microchannel heat sink for highpower diode laser array[J]. Opt. Eng., 2016, 55(9):096105-1-8.
PIETRZAKA. New highly-efficient laser bars and laser arrays for 8xx-10xx nm pumping applications[J]. SPIE, 2014, 8965:89650T.
BAI J G. Mitigation of thermal lensing effect as a brightness limitation of high-power broad area diode Lasers[J]. SPIE, 2011, 7953(1):79531F.
丁晓尘, 张普, 熊玲玲, 等. 大功率半导体激光器贴片层空洞热效应影响[J]. 中国激光, 2011, 38(9):30-36. DING XI C, ZHANG P, XIONG L L, et al.. Thermal reaction of high power semiconductor laser with voids in solder layer[J]. Chin. J. Lasers, 2011, 38(9):30-36. (in Chinese)
吴昊, 陈铭, 高立明, 等. 粘结层空洞对功率器件封装热阻的影响[J]. 半导体光电, 2013, 34(2):226-230.WU H, CHEN M, GAO L M, et al.. Effect of solder layer voids on the thermal resistance of power device package[J]. Semicond. Optoelectron., 2013, 34(2):226-230. (in Chinese)
OTIABA K C, BHATTI R S, EKERE N N, et al.. Numerical study on thermal impacts of different void patterns on performance of chip-scale packaged power device[J]. Microelectron. Reliab., 2012, 52(7):1409-1419.
杨扬, 于果蕾, 李沛旭, 等. 半导体激光器结温的测试及分析[J]. 激光与光电子学进展, 2016, 53(1):157-163. YANG Y, YU G L, LI P X, et al.. Measurement and analysis of junction temperature of semiconductor laser devices[J]. Laser Optoelectron. Prog., 2016, 53(1):157-163. (in Chinese)
连天虹, 王石语, 李兵斌, 等. 粗糙热传导表面下激光介质的热效应[J]. 光子学报, 2013, 42(3):253-257. LIAN T H, WANG S Y, LI B B, et al.. Thermal effect of laser medium with rough surface heat conduction[J]. Acta Photon. Sinica, 2013, 42(3):253-257. (in Chinese)
旷仁雄, 谢飞. 无/低空洞回流焊接技术[J]. 半导体技术, 2010, 35(6):577-579. KUANG R X, XIE F. Void free/low reflowing technology[J]. Semicond. Technol., 2010, 35(6):577-579. (in Chinese)
ZHU N H. Thermal impact of solder voids in the electronic packaging of power devices[C]. Fifteenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium, Bedford, USA, 1999:22-29.
LIU X S, RONALD W D, LAWRENCE C H, et al.. A study on the reliability of indium solder die bonding of high power semiconductor lasers[J]. J. Appl. Phys., 2006, 100(1):013104-1-11.
张志勇. 大功率半导体激光器阵列热行为研究[D]. 西安:中国科学院西安光学精密机械研究所, 2013. ZHANG Z Y. Study of Thermal Behavior of High-Power Diode Laser Array[D]. Xi'an:Xi'an Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 2013. (in Chinese)
袁振邦, 王警卫, 吴迪, 等. 大功率半导体激光器阵列的稳态和瞬态热行为[J]. 中国激光, 2009, 36(8):1957-1962. YUAN Z B, WANG J W, WU D, et al.. Static and transient thermal behavior of high power semiconductor lasers[J]. Chin. J. Lasers, 2009, 36(8):1957-1962. (in Chinese)
吴启保, 青双桂, 熊陶, 等. 大功率LED器件封装材料的研究现状[J]. 化工技术与开发, 2009, 38(2):15-17. WU Q B, QING S G, XIONG T, et al.. The research status of high power LED device packaging materials[J]. Technol. Develop. Chem. Ind., 2009, 38(2):15-17. (in Chinese)
MONT F W, KIM J K, SCHUBERT M F, et al.. High-refractive-index TiO2-nanoparticle-loaded encapsulants for light-emitting diodes[J]. J. Appl. Phys., 2008, 103(8):083120.
井红旗, 仲莉, 倪羽茜, 等. 高功率密度激光二极管叠层散热结构的热分析[J]. 发光学报, 2016, 37(1):82-86. JING H Q, ZHONG L, NI Y X, et al.. Thermal analysis of high power density laser diode stack cooling structure[J]. Chin. J. Lumin., 2016, 37(1):82-86. (in Chinese)
全伟, 李光慧, 陈熙, 等. 一体化半导体激光器的ANSYS热仿真及结构设计[J]. 光学精密工程, 2016, 24(5):1081-1085. QUAN W, LI G H, CHEN X, et al.. Structural design and ANSYS thermal simulation for semiconductor laser system[J]. Opt. Precision Eng., 2016, 24(5):1081-1085. (in Chinese)
郭亮, 吴清文, 颜昌翔. 空间光谱成像仪热设计及其分析与验证[J]. 光学精密工程, 2011, 19(6):1272-1280. GUO L, WU Q W, YAN C X. Thermal design of spaces spectral imaging apparatus and its analysis and verification[J]. Opt. Precision Eng., 2011, 19(6):1272-1280. (in Chinese)
李贺, 梁静秋, 梁中翥, 等. AlGaInP材料LED微阵列热学特性分析[J]. 光学学报, 2016, 36(1):246-253. LIH, LIANG J Q, LING Z Z, et al.. Thermal characteristic analysis of LED of microarray AlGaInP material[J]. Acta Opt. Sinica, 2016, 36(1):246-253. (in Chinese)
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