量子阱生长气压对InGaN/GaN黄光LED光电性能的影响

邱岳; 丁杰; 张建立; 莫春兰; 王小兰; 徐龙权; 吴小明; 王光绪; 刘军林; 江风益

doi:10.3788/fgxb20183907.0961

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量子阱生长气压对InGaN/GaN黄光LED光电性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 量子阱生长气压对InGaN/GaN黄光LED光电性能的影响
- Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED
- 发光学报 2018年39卷第7期页码：961-967
- 作者机构：
  
  南昌大学国家硅基LED工程技术研究中心,江西南昌,330047
- 作者简介：
- 基金信息：
  
  国家重点研发计划（2016YFB0400600，2016YFB0400601）();江西省自然科学基金（2015BAB207053）();江西省重大研发专项（20165
- DOI：10.3788/fgxb20183907.0961
  中图分类号： O484.4;TH691.9
- 纸质出版日期：2018-7-5，
  
  网络出版日期：2018-3-23，
  
  收稿日期：2017-10-18，
  
  修回日期：2018-2-24，
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邱岳, 丁杰, 张建立等. 量子阱生长气压对InGaN/GaN黄光LED光电性能的影响[J]. 发光学报, 2018,39(7): 961-967

QIU Yue, DING Jie, ZHANG Jian-li etc. Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED[J]. Chinese Journal of Luminescence, 2018,39(7): 961-967
邱岳, 丁杰, 张建立等. 量子阱生长气压对InGaN/GaN黄光LED光电性能的影响[J]. 发光学报, 2018,39(7): 961-967 DOI： 10.3788/fgxb20183907.0961.

QIU Yue, DING Jie, ZHANG Jian-li etc. Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED[J]. Chinese Journal of Luminescence, 2018,39(7): 961-967 DOI： 10.3788/fgxb20183907.0961.

摘要

采用MOCVD技术在图形化硅衬底上生长了InGaN/GaN多量子阱黄光LED外延材料，研究了不同的量子阱生长气压对黄光LED光电性能的影响。使用高分辨率X射线衍射仪（HRXRD）和荧光显微镜（FL）对晶体质量进行了表征，使用电致发光系统积分球测试对光电性能进行了表征。结果表明：随着气压升高，In的并入量略有降低且均匀性更好，量子阱中的点缺陷数目降低，但是阱垒间界面质量有所下降。在实验选取的4个气压4，6.65，10，13.3 kPa下，外量子效率最大值随着量子阱生长气压的上升而显著升高，分别为16.60%、23.07%、26.40%、27.66%，但是13.3 kPa下生长的样品在大电流下EQE随电流droop效应有所加剧，在20 Acm

-2

的工作电流下，样品A、B、C、D的EQE分别为16.60%、19.77%、20.03%、19.45%，10 kPa下生长的量子阱的整体光电性能最好。

Abstract

InGaN/GaN multiple quantum wells(MQWs) yellow light-emitting diodes(LEDs) were grown on patterned silicon substrate by metal org anic vapor deposition. The effect of diff erent quantum well growth pressure on the photoelectric properties of yellow light LED has been investigated.The crystal quality was characterized by high resolution X-ray diffraction(HRXRD) and fluorescence microscope(FL)

and the photoelectric properties were characterized by using an integrated integrating sphere. the results review that increased pressure decreases In incorporation

but also enhances the uniformity

contributing to the lower point defects but roughness interface. The maximum of external quantum efficiency improves significantly under the pressure 4

6.65

13.3 kPa

respectively 16.60%

23.07%

26.40%

27.66%. However

it is noted that more efficiency droop appears with the growth pressure at 13.3 kPa. Under the working current of 20 Acm

-2

the EQE of A

C and D were 16.60%

19.77%

20.03% and 19.45%

respectively. The best photoelectric performance of the device can be obtained when the growth pressure is set to 10 kPa.

关键词

MOCVDInGaN/GaN量子阱黄光LED生长气压光电性能

Keywords

MOCVDInGaN/GaN quantum wellsyellow LEDgrowth pressurephotoelectric properties

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