浏览全部资源
扫码关注微信
1. 红外与低温等离子体安徽省重点实验室,安徽 合肥,230037
2. 国防科技大学 电子对抗学院, 安徽 合肥 230037
3. 脉冲功率激光技术国家重点实验室,安徽 合肥,230037
4. 中国科学技术大学 国家同步辐射实验室, 安徽 合肥 230037
纸质出版日期:2018-7-5,
网络出版日期:2018-1-25,
收稿日期:2017-9-26,
修回日期:2017-11-24,
扫 描 看 全 文
刘志伟, 路远, 侯典心等. MBE法制备VO<sub>2</sub>薄膜及其中红外调制深度测量[J]. 发光学报, 2018,39(7): 942-947
LIU Zhi-wei, LU Yuan, HOU Dian-xin etc. VO<sub>2</sub> Thin Films Prepared by MBE and Measurements of Mid-infrared Modulation Depth[J]. Chinese Journal of Luminescence, 2018,39(7): 942-947
刘志伟, 路远, 侯典心等. MBE法制备VO<sub>2</sub>薄膜及其中红外调制深度测量[J]. 发光学报, 2018,39(7): 942-947 DOI: 10.3788/fgxb20183907.0942.
LIU Zhi-wei, LU Yuan, HOU Dian-xin etc. VO<sub>2</sub> Thin Films Prepared by MBE and Measurements of Mid-infrared Modulation Depth[J]. Chinese Journal of Luminescence, 2018,39(7): 942-947 DOI: 10.3788/fgxb20183907.0942.
为了给VO
2
薄膜在定向红外对抗系统防护方面的应用提供理论依据,我们用透过率调制深度表征VO
2
薄膜在中红外波段的相变特性。本实验利用分子束外延法(MBE)制备VO
2
外延单晶薄膜,经XRD、AFM表征,发现其具有(020)择优取向、纯度较高,薄膜表面平整、均匀且致密。经VU-Vis-IR测量发现其近红外透过率相变特性显著,但在紫外和可见光范围内透过率相变特性较不明显。然后我们对制备时间为30 min、40 min的两组薄膜分别进行25~70℃的升温和降温实验,观察其对波长为3 459 nm、脉宽50 ns、重频50 kHz、功率密度0.14 W/cm
2
的中红外激光的透过率变化,并比较两组薄膜的温滞曲线特性。实验发现它们对中红外透过率的调制深度均可达60%以上,前者比后者对中红外的调制深度高出约4%。这说明利用分子束外延法制备的VO
2
单晶薄膜具有良好的中红外调制特性,且调制深度和膜厚有关。进一步表明了利用VO
2
薄膜实现中红外激光防护具有一定的可行性。
In order to provide the theoretical basis for the application of VO
2
thin films to anti-directional infrared countermeasures system
the phase transition characteristics of VO
2
thin films in the infrared band were characterized by the transmittance modulation depth. At first
VO
2
epitaxial mono crystalline thin films were prepared by molecular beam epitaxy(MBE)
and then characterized by X-ray diffraction(XRD)
atomic force microscope(AFM). It is found that it has (020) preferential orientation
high purity VO
2
in the thin films
the surface of thin films is smooth
uniform and dense. The near infrared transmittance phase transmittance property is found to be outstanding by VU-Vis-IR measurement
however
it is less obvious in ultraviolet and visible light. We took an experiment that transmittance variation for mid-infrared from 25 to 70℃ temperature rising and cooling process based on two groups of VO
2
prepared for 30 min and 40 min
respectively. The mid-infrared laser was used in the experiment with 3 459 nm wavelength
50 ns pulse width
50 kHz repetition frequency
and 0.14 W/cm
2
power density. The two temperature hysteresis curves were compared. It is found that the transmittance modulation depth of mid-infrared of them both can reach over 60%
and the former group is about 4% higher than the latter group in transmittance modulation depth in mid-infrared. This indicates that the VO
2
mono crystalline films prepared by the molecular beam epitaxial method have good mid-infrared transmittance modulation characteristics
and the modulation depth is related to film thickness. It is further demonstrated that it is feasible to put VO
2
thin films into anti-directional infrared countermeasures system.
分子束外延VO2薄膜透过率调制深度中红外激光防护
molecular beam epitaxy(MBE)VO2 thin filmstransmittance modulate depthmid-infrared laser protection
MORIN F J. Oxide which show a metal-insulator transition at theneel temperature[J]. Phys. Rev. Lett., 1959, 13(1):34-36.
SRI S, SAI L, KUMAR V, et al.. Study of nolinear optical properties of soidium dopded V2O5 nano particles[J]. Int. J. Nanotechnol. Appl., 2014, 4(3):21-28.
GOODENOUGH J B. The two components of the crystal graphic transition in VO2[J]. Solid State Chem., 1971, 3:490-500.
MAAZA M, HAMIDI D, GIBAUD A, et al.. Optical activity of VO2 based nanophotonics[J]. ICTON IEEE, 2011, 13:1-7.
徐凯, 路远, 凌永顺, 等. 氧化热处理对VO2薄膜红外光学相变特性的影响[J]. 激光与红外, 2015, 45(1):53-57. XU K, LU Y, LING Y S, et al.. Effects of oxidational annealing on infrared optical phase transition properties of VO2 thin films[J]. Laser Infrared, 2015, 45(1):53-57. (in Chinese)
HUANG Z L, CHEN S H, LV C H, et al.. Infrared characteristics of VO2 thin film for smart window and laser protection applications[J]. Appl. Phys. Lett., 2012, 101(19):191905-1-4.
王雅琴, 姚刚, 黄子健, 等. 用于红外激光防护的高开关率VO2薄膜[J]. 物理学报, 2016, 65(5):057102-1-6. WANG Y Q, YAO G, HUANG Z J, et al.. Infrared laser protection of multi-wavelength with high optical switching efficiency VO2 film[J]. Acta Phys. Sinica, 2016, 65(5):057102-1-6. (in Chinese)
MARVEL R E, APPAVOO K, CHOI B K, et al.. Electron-beam deposition of vanadium dioxide thin flims[J]. Appl. Phys. A, 2013, 111:975-981.
王玉泉. 钒氧化物纳米材料的制备和性能[D]. 北京:清华大学, 2008. WANG Y Q. Research on The Preparation and Properties of Nano Vanadium Oxide Materials[D]. Beijing:Tsinghua University, 2008. (in Chinese)
后顺宝, 胡明, 吕志军, 等. 快速热处理对磁控溅射VO2薄膜光电特性的影响[J]. 中国激光, 2012, 39(1):0107002-1-6. HOU S B, HU M, LV Z J, et al.. Influence of rapid thermal progress conditions on electrical and optical properties of VO2 thin film[J]. Chin. J. Lasers, 2012, 39(1):0107002-1-6. (in Chinese)
BEYDAGHYAN G, BASQUE V, ASHIRT P V. High contrast thermochromic switching in vanadium dioxide(VO2) thin films deposited on indium tin oxide substrates[J]. Thin Solid Films, 2012, 522:204
HASHEMI M R, BERRY C W, MERCED E, et al.. Direct measurement of vanadium dioxide dielectric properties in W-band[J]. Infrared Milli Terahz Waves, 2014, 35:486-492.
王海方, 李毅, 蒋群杰, 等. 脉冲激光沉积法制备二氧化钒薄膜的研究进展[J]. 激光与光电子学进展, 2009, 46(6):48-53. WANG H F, LI Y, JIANG Q J, et al.. Research progress of vanadium dioxide thin film fabricated by pulsed laser deposition[J]. Laser Optoelectron. Prog., 2009, 46(6):48-53. (in Chinese)
颜家振, 黄婉霞, 李宁. 复合薄膜的结构和红外光学性质研究[J]. 红外与激光工程, 2013, 42(9):2485-2489. YAN J Z, HUANG W X, LI N. Structure and infrared optical properties of VO2/TiO2 multilayer film[J]. Infrared Laser Eng., 2013, 42(9):2485-2489. (in Chinese)
CHEN F H, FAN L L, CHEN S, et al.. Control of the metal-insulator transition in VO2 epitaxial film by modifying carrier density[J]. ACS Appl. Mater. Interf., 2015(7):6875.
0
浏览量
35
下载量
0
CSCD
关联资源
相关文章
相关作者
相关机构