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1. 江西科技学院 协同创新中心, 江西 南昌 330098
2. 南昌大学 光伏研究院,江西 南昌,330031
3. 浙江正泰太阳能科技有限公司,浙江 杭州,310053
纸质出版日期:2018-6-5,
网络出版日期:2018-3-5,
收稿日期:2017-10-10,
修回日期:2017-11-27,
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唐鹿, 薛飞, 郭鹏等. 氢退火的BZO前电极对非晶硅薄膜太阳能电池性能的影响[J]. 发光学报, 2018,39(6): 838-843
TANG Lu, XUE Fei, GUO Peng etc. Effect of H Annealed BZO as Front Contact on Properties of Thin Films Amorphous Silicon Thin Film Solar Cells[J]. Chinese Journal of Luminescence, 2018,39(6): 838-843
唐鹿, 薛飞, 郭鹏等. 氢退火的BZO前电极对非晶硅薄膜太阳能电池性能的影响[J]. 发光学报, 2018,39(6): 838-843 DOI: 10.3788/fgxb20183906.0838.
TANG Lu, XUE Fei, GUO Peng etc. Effect of H Annealed BZO as Front Contact on Properties of Thin Films Amorphous Silicon Thin Film Solar Cells[J]. Chinese Journal of Luminescence, 2018,39(6): 838-843 DOI: 10.3788/fgxb20183906.0838.
采用低压化学气相沉积方法在玻璃衬底上制备了B掺杂的ZnO(BZO)薄膜,通过氢退火对BZO进行处理,然后作为前电极进行了非晶硅薄膜太阳能电池的制备及性能研究。结果表明:在氢气气氛下退火后,BZO薄膜的载流子浓度基本无变化,但Hall迁移率显著提高,这使得BZO薄膜的导电能力提高;当采用厚度较小、透光率较高的BZO薄膜进行氢退火后作为前电极结构时,非晶硅薄膜太阳能电池的短路电流密度提高0.3~0.4 mA/cm
2
,电池的转化效率提高0.2%。实验结果可为通过优化前电极结构来提高非晶硅薄膜太阳能电池转化效率提供一种简易的方法。
B doped ZnO(BZO) films were prepared on glass substrate by low pressure chemical vapor deposition(LPCVD) method. BZO films were annealed in hydrogen atmosphere and then were used as front contact structure for fabrication of amorphous silicon thin film solar cells. The results show that the carrier concentration of BZO films has no change after annealing in the hydrogen atmosphere
but the carrier mobility dramatically increases
which lead to great enhancement of electrical conductivity of BZO films. When a thinner BZO film with higher transmittance workes as the front contact structure
the light-generated current density increases by 0.3-0.4 mA/cm
2
and the conversion efficiency of amorphous silicon thin film solar cells is improved by 0.2%. The results in this paper can provide a method for further improving the conversion efficiency of amorphous silicon thin film solar cells by optimizing optical and electrical properties of front contact of BZO thin films.
BZO薄膜前电极透光率非晶硅薄膜太阳能电池转化效率
BZO thin filmfront contacttransmittanceamorphous silicon thin film solar cellsconversion efficiency
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石素君, 朱德亮, 吕有明, 等. 氩气退火对氢掺杂AZO薄膜电学性能的影响[J]. 发光学报, 2012, 33(7):742-746. SHI S J, ZHU D L, LU Y M, et al.. Effects of post-annealing in Ar atmosphere on the electrical properties of HAZO films[J]. Chin. J. Lumin., 2012, 33(7):742-746. (in Chinese)
张侠, 刘渝珍, 康朝阳, 等. 退火温度及退火气氛对ZnO薄膜的结构及发光性能的影响[J]. 发光学报, 2010, 31(5):613-618. ZHANG X, LIU Y Z, KANG C Y, et al.. Effects of annealing atmosphere and temperature on the structure and photolumines-cence of ZnO films prepared by pulsed laser deposition[J]. Chin. J. Lumin., 2010, 31(5):613-618. (in Chinese)
LIU W W, YAO B, LI Y F, et al.. Structure, luminescence and electrical properties of ZnO thin films annealed in H2 and H2O ambient:a comparative study[J]. Thin Solid Films, 2010, 518(14):3923-3928.
YAMADA Y, KADOWAKI K, KIKUCHI H, et al.. Positional variation and annealing effect in magnetron sputtered Ga-doped ZnO films[J]. Thin Solid Films, 2016, 609(6):25-29.
李旺, 唐鹿, 杜江萍, 等. 氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响[J]. 发光学报, 2016, 37(12):1496-1501. LI W, TANG L, DU J P, et al.. Effect of hydrogen annealing on the optical and electrical properties of ZnO thin films grown by LPCVD[J]. Chin. J. Lumin., 2016, 37(12):1496-1501. (in Chinese)
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SCHULTE J, HARBAUER K, ELLMER K. Toward efficient Cu(In,Ga)Se2 solar cells prepared by reactive magnetron co-sputtering from metallic targets in an Ar:H2Se atmosphere[J]. Prog. Photovolt. Res. Appl., 2015, 23(12):1793-1805.
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