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1. 兰州文理学院 电子信息工程学院,甘肃 兰州,730000
2. 兰州大学 物理科学与技术学院, 甘肃 兰州 730000
纸质出版日期:2018-6-5,
网络出版日期:2018-1-5,
收稿日期:2017-9-12,
修回日期:2017-12-11,
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张旭, 张杰, 张福甲. 有机分子PTCDA在P型Si单晶(100)晶面的生长机理[J]. 发光学报, 2018,39(6): 790-794
ZHANG Xu, ZHANG Jie, ZHANG Fu-jia. Growing Mechanism of Organic Molecule PTCDA at P-type Si Single Crystal(100) Crystal Face[J]. Chinese Journal of Luminescence, 2018,39(6): 790-794
张旭, 张杰, 张福甲. 有机分子PTCDA在P型Si单晶(100)晶面的生长机理[J]. 发光学报, 2018,39(6): 790-794 DOI: 10.3788/fgxb20183906.0790.
ZHANG Xu, ZHANG Jie, ZHANG Fu-jia. Growing Mechanism of Organic Molecule PTCDA at P-type Si Single Crystal(100) Crystal Face[J]. Chinese Journal of Luminescence, 2018,39(6): 790-794 DOI: 10.3788/fgxb20183906.0790.
对PTCDA的分子结构及其化学键的形成进行了分析,并讨论了晶面指数(100)Si单晶的晶格结构。在此基础上,评述了PTCDA分子在P-Si单晶(100)晶面上生长的机理,并制备了样品PTCDA/P-Si(100)。利用XRD对样品测试得出,在P-Si(100)晶面上沉积的PTCDA薄膜中仅存在物相。利用XPS对样品测试得出,在其界面层中PTCDA酸酐中的4个羟基O原子与C原子结合,其结合能为532.4 eV;苝核基团外围的8个C、H原子以共价键结合,其结合能为289.0 eV;在界面处,悬挂键上的Si原子与PTCDA酸酐中的C、O原子结合,形成C-Si-O键及C-Si键,构成了界面层的稳定结构。
The molecular structure and the formation of chemical bonds of organic semiconductor materials PTCDA were analyzed
and the lattice structure of crystal plane index (100)Si single crystal was discussed. On this basis
the mechanism of the growth of PTCDA molecules on the crystal surface of P-Si single crystal(100) was reviewed
and the sample PTCDA/P-Si(100) was prepared. X-ray diffraction(XRD) measurement shows that there are only -PTCDA phases in the P-Si(100) pace. XPS test shows that the four hydroxyl O atoms in the acid anhydride of PTCDA molecular are covalently bound to the C atom in the interface layer
and the binding energy is 532.4 eV; the eight C and H atoms covalently bind in the periphery of perylene nuclear group
and the binding energy is 289.0 eV. At the interface
Si atoms with 2s and 2p electrons on the surface state danglingbond are bound to the C and O atoms in the acid anhydride of PTCDA molecular to form a C-Si-O bond and C-Si bond
thereby constructing a stable structure of interfacial molecules.
有机半导体材料PTCDAP-Si(100)晶面生长机理
organic semiconducot material PTCDAP-type Si(100) crystal facegrowing mechanism
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张旭, 张杰, 闫兆文, 等. 苝四甲酸二酐的真空升华提纯及其光谱测试与分析[J]. 光谱学与光谱分析, 2015, 35(4):885-888. ZHANG X, ZHANG J, YAN Z W, et al.. Purification of PTCDA by vacuum sublimation and spectral test and analysis[J]. Spectros. Spect. Anal., 2015, 35(4):885-888. (in Chinese)
张旭. PTCDA/p-Si异质结势垒区特性理论的研究[J]. 甘肃科学学报, 2008, 20(4):70-73. ZHANG X. A theoretical study on the characteristics inheterojunction barrier potential region[J]. J. Gansu Sci., 2008, 20(4):70-73. (in Chinese)
张旭. 降低Si基有机光电探测器暗电流的研究[J]. 甘肃科学学报, 2009, 21(4):54-57. ZHANG X. Study on the reduction of the dark current in Si-based organicphotodetector[J]. J. Gansu Sci., 2009, 21(4):54-57. (in Chinese)
张旭, 何锡源, 王德明. 衬底温度及蒸发条件对有机光电探测器性能的影响[J]. 光电子激光, 2012, 23(3):439-444. ZHANG X, HE X Y, WANG D M. Influence of substrate temperature and evaporation condition on organicphotodetector's characteristics[J]. J. Optoelectron. Laser, 2012, 23(3):439-444. (in Chinese)
张旭, 张桂玲, 胥超. Si基有机光电探测器低阻欧姆电极制作[J]. 功能材料与器件学报, 2010, 16(2):174-178. ZHANG X, ZHANG G L, XU C. Fabrication low-resistanceohmic contact to Si-based organic photodetector[J]. J. Funct. Mater. Dev., 2010, 16(2):174-178. (in Chinese)
张旭, 张杰, 闫兆文, 等. PTCDA/P-Si光电探测器欧姆接触层的XPS测试分析[J]. 发光学报, 2014, 35(12):1459-1463. ZHANG X, ZHANG J, YAN Z W, et al.. XPS test analysis of ohmic contact layer of photodetector[J]. Chin. J. Lumin., 2014, 35(12):1459-1463. (in Chinese)
何锡源, 张旭, 郑代顺, 等. 有机/无机光电探测器的AFM和XPS分析[J]. 光电子激光, 2003, 14(4):336-341. HE X Y, ZHANG X, ZHENG D S, et al.. AFM and XPS analysises for organic-on-inorganic photoelectric detectors[J]. J. Optoelectron. Laser, 2003, 14(4):336-341. (in Chinese)
张旭, 张杰, 闫兆文, 等. 高纯度3,4,9,10 Perylenetetracarboxylic Dianhydride-PTCDA的元素分析及核磁共振谱和X射线衍射谱的测试与分析[J]. 光谱学与光谱分析, 2016, 36(11):3714-3719. ZHANG X, ZHANG J, YAN Z W, et al.. The analysis of element and measure analysis of NMR spectrum and XRD spectrum for high purity 3,4,9,10 perylenetetracarboxylic dianhydride-PTCDA[J]. Spectros. Spect. Anal., 2016, 36(11):3714-3719. (in Chinese)
DAS A, SALVAN G, KAMPEN T U, et al.. Influence of substrate surfaces on the growth of organic films[J]. Appl. Surf. Sci., 2003, 212-213:433-437.
LEVIN A A, LEISEGANG T, FORKER R, et al.. Preparation and crystallographic characterization of crystalline modifications of 3,4:9,10-perylenetetracarboxylic dianhydride at room temperature[J]. Cryst. Res. Technol., 2010, 45(4):439-448.
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