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1. 天津职业技术师范大学 电子工程学院, 天津 300222
2. 天津职业技术师范大学 机械工程学院, 天津 300222
3. 东京理科大学 物理系, 日本
纸质出版日期:2018-6-5,
网络出版日期:2018-3-5,
收稿日期:2017-9-27,
修回日期:2018-2-26,
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李彤, 王铁钢, 范其香等. Na或Cu掺杂对Si/NiO异质结的光电性能影响[J]. 发光学报, 2018,39(6): 784-789
LI Tong, WANG Tie-gang, FAN Qi-xiang etc. Optical and Electrical Properties of Si/NiO Heterojunctions with and Without Na or Cu Doping[J]. Chinese Journal of Luminescence, 2018,39(6): 784-789
李彤, 王铁钢, 范其香等. Na或Cu掺杂对Si/NiO异质结的光电性能影响[J]. 发光学报, 2018,39(6): 784-789 DOI: 10.3788/fgxb20183906.0784.
LI Tong, WANG Tie-gang, FAN Qi-xiang etc. Optical and Electrical Properties of Si/NiO Heterojunctions with and Without Na or Cu Doping[J]. Chinese Journal of Luminescence, 2018,39(6): 784-789 DOI: 10.3788/fgxb20183906.0784.
利用磁控溅射方法制备了引入Na或Cu元素前后Si/NiO异质结。实验结果表明,Na元素引入后的Si/NiO:Na异质结的整流特性最佳。此时,Si/NiO:Na异质结光学透过率可以达到70%,这可能是由于Si/NiO:Na异质结的结晶质量较优、薄膜内缺陷少所致。Si/NiO:Na异质结
I-V
曲线的拟合结果显示界面态状态也会影响其整流特性。而Si/NiO和Si/NiO:Cu异质结都没能获得较好的整流特性,可能是薄膜内缺陷增多所致。这一结论得到了XRD、SEM、AFM和UV结果的支持。
The Si/NiO heterojunctions with and without Na or Cu doping were prepared by the magnetron sputtering method. The best rectifying characteristics appears in the Si/NiO:Na heterojunction
where the average optical transmittance can reach to 70% in the visible range
which may be explained by the reduced defects due to the improved crystallization. The fitted
I-V
curve of Si/NiO:Na heterojunction indicates that the interface state also affects the rectifying property. Good rectifying property hasn't been observed in Si/NiO and Si/NiO:Cu heterojunctions because of the appearance of more defects. These results are also evidenced by XRD
SEM
AFM and UV results.
NiONa掺杂Cu掺杂异质结整流特性
NiONa dopingCu dopingheterojunctionsrectifying property
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