反射式倒装对1 300 nm激光器性能改善的分析

薛正群; 王凌华; 苏辉

doi:10.3788/fgxb20183904.0534

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反射式倒装对1 300 nm激光器性能改善的分析

器件制备及器件物理 | 更新时间：2020-08-12

- 反射式倒装对1 300 nm激光器性能改善的分析
- Analysis The Performance Improvement of 1 300 nm Laser with Reflective Flip Chip Package
- 发光学报 2018年39卷第4期页码：534-540
- 作者机构：
  
  1. 中国科学院大学, 北京 100049
  2. 中国科学院福建物质结构研究所, 福建福州 350002
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61405198）();国家863计划（2013AA014202）资助项目()
- DOI：10.3788/fgxb20183904.0534
  中图分类号： O472;TN248.4
- 纸质出版日期：2018-4-5，
  
  网络出版日期：2017-11-3，
  
  收稿日期：2017-8-15，
  
  修回日期：2017-10-12，
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薛正群, 王凌华, 苏辉. 反射式倒装对1 300 nm激光器性能改善的分析[J]. 发光学报, 2018,39(4): 534-540

XUE Zheng-qun, WANG Ling-hua, SU Hui. Analysis The Performance Improvement of 1 300 nm Laser with Reflective Flip Chip Package[J]. Chinese Journal of Luminescence, 2018,39(4): 534-540
薛正群, 王凌华, 苏辉. 反射式倒装对1 300 nm激光器性能改善的分析[J]. 发光学报, 2018,39(4): 534-540 DOI： 10.3788/fgxb20183904.0534.

XUE Zheng-qun, WANG Ling-hua, SU Hui. Analysis The Performance Improvement of 1 300 nm Laser with Reflective Flip Chip Package[J]. Chinese Journal of Luminescence, 2018,39(4): 534-540 DOI： 10.3788/fgxb20183904.0534.

摘要

对AlGaInAs多量子阱1 300 nm FP激光器进行反射式倒装封装，在热沉上靠近激光器出光端面约10~20 m的区域采用Au反射层，对器件垂直方向出光进行反射。测试结果显示，与常规封装相比，采用这种结构封装芯片垂直发散角从34.5降低至17，器件单模光纤的平均耦合功率从1 850 W提高至2 326 W，耦合效率从21.1%提高到26.5%。对两种激光器进行光电参数的测量，结果表明：与常规封装器件相比，采用反射式倒装结构器件的饱和电流从135 mA提高至155 mA，饱和输出功率从37 mW提高至42 mW，热阻从194 K/W降低至131 K/W。最后对两种器件在95℃环境温度、100 mA电流下进行加速老化实验，老化结果显示：在老化条件下，器件衰退系数从常规封装的4.2210

-5

降低至1.0610

-5

，寿命从5 283 h提高至21 027 h。

Abstract

AlGaInAs MQWs 1 300 nm FP lasers were packaged p-side down with a reflective submount which had 10-20 m Au film near the facets of laser bare die. Compared to convention package form laser (LD-B)

the divergence angle at FWHM of flip chip (LD-A) with a Au reflector decreases from 34.5 to 17

and the average SMF coupling power increases from 1 850 W to 2 326 W

as the coupling efficiency increases from 21.1% to 26.5%. Compared to LD-B

the saturated current of LD-A increases from 135 mA to 155 mA

the saturated output power increasses from 37 mW to 42 mW

and the thermal resistance decreases from 194 K/W to 131 K/W. Finnaly

the aging experiments are carried out under the condition of 95℃ ambient temperature and 100 mA injection current. Compared to LD-B

the degradation coefficient of LD-A under aging condition decreases from 4.2210

-5

to 1.0610

-5

and the lifetime increases from 5 283 h to 21 027 h.

关键词

AlGaInAs多量子阱激光器倒装Au反射层发散角加速老化

Keywords

AlGaInAs MQWs laserflip chipAu reflectordivergence angleaccelerated aging

references

HUANG J S, NGUYEN T, HSIN W, et al.. Reliability of etched-mesa buried-heterostructure semiconductor lasers[J]. IEEE Trans. Dev. Mater. Relib., 2005, 5(4):665-674.

HUANG J S, MIAO R S, LU H, et al.. Theoretical and experimental thermal analysis of inp ridge lasers on submounts and TO packages[J]. IEEE Trans. Dev. Mater. Relib., 2007, 7(2):363-368.

HUANG J S, OLSON T, ISIP E. Human-body-model electrostatic-discharge and electrical-overstress studies of buried-heterostructure semiconductor lasers[J]. IEEE Trans. Dev. Mater. Relib., 2007, 7(3):453-461.

HUANG J S, LU H. Size effect on ESD Threshold and degradation behavior of InP buried heterostructure semiconductor lasers[J]. Open Appl. Phys. J., 2009, 2:5-10.

王淑娜, 张普, 熊玲玲, 等. 温度对高功率半导体激光器阵列"smile"的影响[J]. 光子学报, 2016, 45(5):7-12. WANG S N, ZHANG P, XIONG L L, et al.. Influence of temperature on "smile" in high power diode laser bars[J]. Acta Photon. Sinica, 2016, 45(5):7-12. (in Chinese)

金伟, 李光慧, 陈熙, 等. 一体化半导体激光器的ANSYS热仿真及结构设计[J]. 光学精密工程, 2016, 24(5):1080-1086. JIN W, LI G H, CHEN X, et al.. Structural design and ANSYS thermal simulation for semiconductor laser system[J]. Opt. Precision Eng., 2016, 24(5):1080-1086. (in Chinese)

KNAUER A, ERBERT G, STASKE R, et al.. High-power 808 nm lasers with a super-large optical cavity[J]. Semicond. Sci. Technol., 2005, 20:621-624.

BUGGE F, ZEIMER U, WENZEl H, et al.. Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields[J]. Phys. Stat. Sol.(c), 2006, 3(3):423-426.

CRUMP P, PIETRZAK A, BUGGE F, et al.. 975 nm high power diode lasers with high efficiency and narrow vertical far field enabled by low index quantum barriers[J]. Appl. Phys. Lett., 2010, 96:131011-1-3.

ABDULRAHMAN A M, ABDULLAH A, ABDELMAJID S. Waveguide design optimization for long wavelength semiconductor lasers with low threshold current and small beam divergence[J]. J. Modern Phys., 2011, 2:225-230.

高树理. 半导体激光器和光纤的耦合[J]. 煤炭技术, 2010, 29(2):28-30. GAO S L. Coupling of semiconductor laser with fiber[J]. Coal Technol., 2010, 29(2):28-30.

GUO X, SCHUBERT E F. Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates[J]. Appl. Phys. Lett., 2001, 78:3337-3339.

PEARTON S J, ABERNATHY C R, PANISH M B, et al..Implant induced high resistivity regions in InP and In GaAs[J]. J. Appl. Phys, 1989, 66(2):656-662.

FAN Z F, MOHAMMAD S N, KIM W, et al.. Very low resistance multilayer Ohmic contact to n-GaN[J]. Appl. Phys. Lett., 1996, 68(12):1672-1674.

张晓磊, 薄报学, 张哲铭, 等. C-mount封装激光器热特性分析与热沉结构优化研究[J]. 发光学报, 2017, 38(7):891-896. ZHANG X L, BO B X, ZHANG Z M, et al.. Thermal characteristics analysis of C-mount sink package laser and optimization of heat sink structure[J]. Chin. J. Lumin., 2017, 38(7):891-896. (in Chinese)

施敏, 伍国珏. 半导体器件物理[M]. 西安:西安交通大学出版社, 2008. SHI M, WU G J. Semicondudor Devices Physics[M]. Xi'an:Xi'an Jiao Tong University Press, 2008. (in Chinese)

MELANIE O, SWALES A. Capabilites and reliability of LEDs and laser diodes[J]. What's New in Electron., 2000, 20(6):1-5.

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