半导体激光器巴条封装应力及评价

张哲铭; 薄报学; 张晓磊; 顾华欣; 刘力宁; 徐雨萌; 乔忠良; 高欣

doi:10.3788/fgxb20183903.0343

您当前的位置：

首页 >

文章列表页 >

半导体激光器巴条封装应力及评价

器件制备及器件物理 | 更新时间：2020-08-12

- 半导体激光器巴条封装应力及评价
- Evaluation of Packaging Induced Stress of Semiconductor Laser Bar
- 发光学报 2018年39卷第3期页码：343-348
- 作者机构：
  
  长春理工大学, 高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
  
  国家重点研发计划（SQ2017YFGX020046）();国家自然科学基金（61176048，61177019，61308051）();吉林省科技发展计划（201502
- DOI：10.3788/fgxb20183903.0343
  中图分类号： TN248.4
- 纸质出版日期：2018-3-5，
  
  网络出版日期：2017-8-28，
  
  收稿日期：2017-7-5，
  
  修回日期：2017-8-19，
扫描看全文
张哲铭, 薄报学, 张晓磊等. 半导体激光器巴条封装应力及评价[J]. 发光学报, 2018,39(3): 343-348

ZHANG Zhe-ming, BO Bao-xue, ZHANG Xiao-lei etc. Evaluation of Packaging Induced Stress of Semiconductor Laser Bar[J]. Chinese Journal of Luminescence, 2018,39(3): 343-348
张哲铭, 薄报学, 张晓磊等. 半导体激光器巴条封装应力及评价[J]. 发光学报, 2018,39(3): 343-348 DOI： 10.3788/fgxb20183903.0343.

ZHANG Zhe-ming, BO Bao-xue, ZHANG Xiao-lei etc. Evaluation of Packaging Induced Stress of Semiconductor Laser Bar[J]. Chinese Journal of Luminescence, 2018,39(3): 343-348 DOI： 10.3788/fgxb20183903.0343.

摘要

为了快捷而有效地检测半导体激光器的封装应力，设计了一种通过检测激光器巴条各个单元偏振度揭示出其封装应力分布的实验方法。实验测试半导体激光器巴条的各项参数，并利用有限元软件模拟，通过半导体能带与应力理论，说明偏振度与封装应力的影响关系。实验表明，巴条个别发光单元的偏振度较低、阈值电流较高是由于封装应力较大。通过计算，封装应力为141.92 MPa，偏振等效应力最大为26.73 MPa。实验器件在阈值以下的偏振度较好地反映了封装应力的分布趋势。利用阈值电流以下测量器件偏振度，可以为选择热沉及焊料材料、焊接工艺参数的改进等方面提供一个较为快捷而有效的检测方法。

Abstract

In order to detect the packaging induced stress of semiconductor lasers quickly and effectively

an experimental device which can reveal the encapsulation stress by detecting the polarization degree of each unit of laser bar was designed. The parameters of the semiconductor laser bar were experimentally tested and the finite element software was used to simulate the relationship between the degree of polarization and the packaging induced stress through the theory of the semiconductor energy band and stress. The experiment results show that the individual light-emitting unit of the bar is less polarized

the higher threshold current is due to the larger packaging stress. Through the calculation

the packing stress is 141.92 MPa

and the polarization equivalent stress is 26.73 MPa. The degree of polarization of the device below the threshold reflects the distribution trend of the packaging induced stress

and the degree of polarization of the device can be measured by using the following threshold current. It can provide a quicker and more efficient method for selecting the heat sink and the solder material and the improvement of the welding process parameters.

关键词

巴条偏振度封装应力偏振等效应力

Keywords

laser barpolarizationpackaging induced stresspolarization equivalent stress

references

王立军, 宁永强, 秦莉, 等. 大功率半导体激光器研究进展[J]. 发光学报, 2015, 36(1):1-19. WANG L J, NING Y Q, QIN L, et al.. Development of high power diode laser[J]. Chin. J. Lumin., 2015, 36(1):1-19. (in Chinese)

陈华, 李静, 周兴林, 等. 封装热应力致半导体激光器"Smile"效应的抑制方法[J]. 发光学报, 2017, 38(5):655-661. CHEN H, LI J, ZHOU X L, et al.. Measures to reduce smile effect of semiconductor laser diode arrays caused by packaging thermal stress[J]. Chin. J. Lumin., 2017, 38(5):655-661. (in Chinese)

王文知, 井红旗, 祁琼, 等. 大功率半导体激光器可靠性研究和失效分析[J]. 发光学报, 2017, 38(2):165-169. WANG W Z, JING H Q, QI Q, et al.. Reliability test and failure analysis of high power semiconductor laser[J]. Chin. J. Lumin., 2017, 38(2):165-169. (in Chinese)

王昭, 雷军, 谭昊, 等. 基于mini-bar的二极管激光器焊接实验研究[J]. 强激光与粒子束, 2016, 28(8):9-12. WANG Z, LEI J, TAN H, et al.. Experimental investigation on diode laser bonding based on mini-bars[J]. High Power Laser and Particle Beams, 2016, 28(8):9-12. (in Chinese)

TOMM J W, ZIEGLER M, OUDART M, et al.. Gradual degradation of GaAs-based quantum well lasers, creation of defects, and generation of compressive strain[J]. Physica Status Solidi Applications & Materials, 2010, 206(8):1912-1915.

TOMM J W, TIEN T Q, CASSIDY D T. Spectroscopic strain measurement methodology:degree of polarization photoluminescence versus photocurrent spectroscopy[J]. Appl. Phys. Lett., 2006, 88(13):133504.

TOMM J W, GERHARDT A, MVLLER R, et al.. Spatially resolved spectroscopic strain measurements on high-power laser diode bars[J]. J. Appl. Phys., 2003, 93(3):1354-1362.

TOMM J W, GERHARDT A, ELSAESSER T, et al.. Simultaneous quantification of strain and defects in high-power diode laser devices[J]. Appl. Phys. Lett., 2002, 81(17):3269-3271.

LARRY A C, SCOTT W C, MILAN L M. Diode Lasers and Photonic Integrated Circuits[M]. Hoboken:John Wiley Sons, 2012.

BIR G, GE P. Symmetry and strain-induced effects in semiconductors[J]. Neurobiol. Aging, 1974, 37(4):S274.

王烨, 张岩, 秦莉, 等. 高功率半导体激光器列阵封装引入应变的测量[J]. 光学精密工程, 2010,18(9):1951-1958. WANG Y, ZHANG Y, QIN L, et al.. Measurement of packaging-induced strain in high power diode laser bar[J]. Opt. Presion Eng., 2010, 18(9):1951-1958. (in Chinese)

郭长志. 半导体激光器能带结构和光增益的量子理论[M]. 北京:科学出版社, 2016. GUO C Z. The Quantum Theory of Band Structure and Light Gain of Semiconductor Lasers[M]. Beijing:Science Press, 2016. (in Chinese)

LECLECHJ, CASSIDY D T, LARUELLE F, et al.. Residual mechanical stress decrease in GaAs-based laser diodes via a bi-material investigation[J]. SPIE, 2011, 8080:808006-1-9.

LECLECH J, CASSIDY D T, BIET M, et al.. GaAs-based laser diode bonding-induced stress investigation by means of simulation and degree of polarization of photoluminescence measurements[C]. International Conference on Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, IEEE, Bordeaux, France, 2010:1-6.

ZHU H, LIU K, XIONG C, et al.. The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes[J]. Microelectron. Reliab., 2015, 55(1):62-65.

倪羽茜, 井红旗, 孔金霞, 等. 高功率半导体激光器陶瓷封装散热性能研究[J]. 发光学报, 2016, 37(5):561-566. NI Y X, JING H Q, KONG J X, et al.. Thermal performance of high-powersemiconductor laser packaged by ceramic submount[J]. Chin. J. Lumin., 2016, 37(5):561-566. (in Chinese)

王淑娜, 张普, 熊玲玲, 等. 温度对高功率半导体激光器阵列"smile"的影响[J]. 光子学报, 2016, 45(5):0514001. WANG S N, ZHANG P, XIONG L L, et al.. Influence of temperature on "smile" in high power diode laser bars[J]. Acta Photon. Sinica, 2016, 45(5):0514001. (in Chinese)

浏览量

106

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

损耗型单负材料双层结构的反射率及偏振度