高效率N掺杂有机电致发光器件的研制

于瑶瑶; 喻叶; 林雯嫣; 吴志军; 林薇

doi:10.3788/fgxb20183903.0315

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高效率N掺杂有机电致发光器件的研制

器件制备及器件物理 | 更新时间：2020-08-12

- 高效率N掺杂有机电致发光器件的研制
- Highly Efficient N-doped Organic Light-emitting Devices
- 发光学报 2018年39卷第3期页码：315-321
- 作者机构：
  
  华侨大学信息科学与工程学院, 福建厦门 361021
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61404053）资助项目()
- DOI：10.3788/fgxb20183903.0315
  中图分类号： TN383+.1;TN312+.8
- 纸质出版日期：2018-3-5，
  
  网络出版日期：2017-10-25，
  
  收稿日期：2017-7-19，
  
  修回日期：2017-10-8，
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于瑶瑶, 喻叶, 林雯嫣等. 高效率N掺杂有机电致发光器件的研制[J]. 发光学报, 2018,39(3): 315-321

YU Yao-yao, YU Ye, LIN Wen-yan etc. Highly Efficient N-doped Organic Light-emitting Devices[J]. Chinese Journal of Luminescence, 2018,39(3): 315-321
于瑶瑶, 喻叶, 林雯嫣等. 高效率N掺杂有机电致发光器件的研制[J]. 发光学报, 2018,39(3): 315-321 DOI： 10.3788/fgxb20183903.0315.

YU Yao-yao, YU Ye, LIN Wen-yan etc. Highly Efficient N-doped Organic Light-emitting Devices[J]. Chinese Journal of Luminescence, 2018,39(3): 315-321 DOI： 10.3788/fgxb20183903.0315.

摘要

为了改善有机电致发光器件的性能，利用CsN

作为N掺杂剂，以B3PYPPM为电子传输材料，制备了基于绿色磷光材料Ir（ppy）

的高效率有机电致发光器件。针对不同N掺杂浓度和掺杂厚度的器件进行研究，最终得到最佳N掺杂器件B，器件结构为ITO/HAT-CN（5 nm）/TAPC（70 nm）/TCTA∶Ir（ppy）

（15%，20 nm）/B3PYPPM（17 nm）/B3PYPPM∶CsN

（10%，63 nm）/Al。实验结果表明，浓度与厚度适当的N掺杂器件能有效提高器件的电流效率和功率效率。CsN

作为一种高效的N掺杂剂，与电子传输材料B3PYPPM掺杂后，有效地降低了电子的注入势垒，增加了电子注入，提高了电子迁移率，改善了电子的注入和传输能力，使载流子更加平衡，从而降低了器件的开启电压和驱动电压，有效地提高了电流效率和功率效率。最佳N掺杂器件B开启电压仅为2.1 V，最大电流效率和功率效率分别为67.0 cd/A、91.1 lm/W。值得注意的是，在1 000 cd/m

亮度下，最佳N掺杂器件B的功率效率仍能达到80.1 lm/W。

Abstract

For the purpose of improving the performance of organic light-emitting device (OLED)

the green phosphorescent OLED was fabricated using Ir(ppy)

as emitter and CsN

as N-dopant doped in B3PYPPM which functioned as electron-transporting layer (ETL). The N-doped device with best performance named device B comprising ITO/HAT-CN(5 nm)/TAPC(70 nm)/TCTA:Ir(ppy)

(15%

20 nm)/B3PYPPM(17 nm)/B3PYPPM:CsN

(10%

63 nm)/Al was achieved by optimizing the doping concentration and the thickness of N-doped ETL. The results indicate that employing the N-doped ETL possessing proper doping concentration as well as thickness can enhance current efficiency and power efficiency dramatically. Served effectively as N-dopant in B3PYPPM

CsN

reduces the injection barrier for electron

enhances the electron conductivity

facilitates the electron injection and transportation and enhances the charge balance

leading to the decrease in turn on and operating voltages as well as improvement on current efficiency and power efficiency. The optimized N-doped device B shows rather low turn-on voltage with the value of 2.1 V

and the maximum efficiencies are 67.0 cd/A and 91.1 lm/W respectively. It is worthwhile to point out power efficiency of device B can also reach 80.1 lm/W at high luminance of 1 000 cd/m

关键词

CsN3B3PYPPMN掺杂剂电流效率功率效率

Keywords

CsN3B3PYPPMN-dopantcurrent efficiencypower efficiency

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