YU Ning, WANG Hong-hang, LIU Fei-fei etc. Effect of Multilayer Ti/Al Electrode Structure on AlGaN/GaN HEMT Ohmic Contact Characteristics[J]. Chinese Journal of Luminescence, 2016,37(2): 219-223
YU Ning, WANG Hong-hang, LIU Fei-fei etc. Effect of Multilayer Ti/Al Electrode Structure on AlGaN/GaN HEMT Ohmic Contact Characteristics[J]. Chinese Journal of Luminescence, 2016,37(2): 219-223 DOI: 10.3788/fgxb20163702.0219.
The effect of multilayer Ti/Al structure electrode on AlGaN/GaN HEMT Ohmic contact characteristics and the surface morphology were investigated. The specific contact resistance of all kinds of electrode structure was measured by transmission line model (TLM). The scanning electron microscope (SEM) was used to measure the electrode surface morphology. The experiment results show that the special contact resistance tend to decrease and the surface morphology tend to be smooth with the increasing of the number of Ti/Al layers in the same annealing conditions. The reducing of the thickness of Ti/Al layer can increase the specific contact resistance because of Au in-diffusion
but can slightly improve the surface morphology. High Ti ratio can reduce the formation of TiN
and lead to the increasing of specific contact resistance
but can greatly improve the surface morphology.
关键词
高电子迁移率晶体管欧姆接触退火比接触电阻率
Keywords
high electron mobility transistorohmic contactannealingspecific contact resistance
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