紫外有机发光器件的激子形成区域优化与掺杂调控

莫炳杰; 刘黎明; 王红航; 游凤姣; 魏斌; 张小文

doi:10.3788/fgxb20163702.0213

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紫外有机发光器件的激子形成区域优化与掺杂调控

器件制备及器件物理 | 更新时间：2020-08-12

- 紫外有机发光器件的激子形成区域优化与掺杂调控
- Optimization of Excimer Forming Zone and Doping Engineering in Ultraviolet Organic Light-emitting Device
- 发光学报 2016年37卷第2期页码：213-218
- 作者机构：
  
  1. 上海大学新型显示技术及应用集成教育部重点实验室上海,200072
  2. 桂林电子科技大学广西信息材料重点实验室,广西桂林,541004
  3. 电子科技大学中山学院电子薄膜与集成器件国家重点实验室中山分室,广东中山,528402
  4. 广西信息科学实验中心,广西桂林,541004
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61275041,61565003);广西教育厅重点项目(KY2015ZD046);中山市科技计划(2014A2FC305, 2014A2FC306)资助项目
- DOI：10.3788/fgxb20163702.0213
  中图分类号： TN383+.1
- 纸质出版日期：2016-2-10，
  
  收稿日期：2015-10-27，
  
  修回日期：2015-12-10，
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莫炳杰, 刘黎明, 王红航等. 紫外有机发光器件的激子形成区域优化与掺杂调控[J]. 发光学报, 2016,37(2): 213-218

MO Bing-jie, LIU Li-ming, WANG Hong-hang etc. Optimization of Excimer Forming Zone and Doping Engineering in Ultraviolet Organic Light-emitting Device[J]. Chinese Journal of Luminescence, 2016,37(2): 213-218
莫炳杰, 刘黎明, 王红航等. 紫外有机发光器件的激子形成区域优化与掺杂调控[J]. 发光学报, 2016,37(2): 213-218 DOI： 10.3788/fgxb20163702.0213.

MO Bing-jie, LIU Li-ming, WANG Hong-hang etc. Optimization of Excimer Forming Zone and Doping Engineering in Ultraviolet Organic Light-emitting Device[J]. Chinese Journal of Luminescence, 2016,37(2): 213-218 DOI： 10.3788/fgxb20163702.0213.

摘要

采用空穴传输兼发光层CBP和电子传输兼发光层TAZ构建了紫外有机电致发光器件(UVOLED)

通过调控功能层厚度可以优化激子形成区域

进而改善器件性能。实验结果表明:CBP厚度的变化对器件性能影响甚微

而TAZ厚度变化则有显著影响。当CBP和TAZ厚度分别为50 nm和30 nm时

获得了最大辐照度为4.4 mW/cm

@270 mA/cm

、外量子效率(EQE)为0.94%@12.5 mA/cm

发光来自于CBP主发光峰~410 nm以及TAZ肩峰~380 nm的UVOLED器件。在此基础上

通过在CBP/TAZ界面引入超薄[CBP: TAZ]掺杂层可以加速激子复合

降低器件驱动电压

同时还有利于改善载流子平衡性

提高发光效率(最大EQE达到了0.97%@20 mA/cm

)而不影响光谱特性。

Abstract

Ultraviolet organic light-emitting devices (UVOLEDs) were constructed by using hole-transport-emitting layer of 4

4'-bis(carbazol-9-yl)biphenyl (CBP) and electron-transport-emitting layer of 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1

4-triazole (TAZ). The excimer forming zone was optimized by adjusting the functional layer thickness

which contriuted to device performance improvement. Our results indicate that the thickness variation of CBP has negligible effect on device performance while that of TAZ shows considerable effect. The maximum radiance of 4.4 mW/cm

@270 mA/cm

and external quantum efficiency (EQE) of 0.94%@12.5 mA/cm

are achieved in UVOLED with optimal thickness of 50 nm CBP and 30 nm TAZ. The electroluminescence peak of ~410 nm and shoulder of ~380 nm

resulted from CBP and TAZ

respectively

are observed. Moreover

an ultrathin layer of[CBP:TAZ] inserted between CBP and TAZ accelerates excimer recombination rate and reduces driving voltage. Meanwhile

the carrier balance is improved and thus device efficiency is slightly promoted (the maximum EQE reaches 0.97%@20 mA/cm

) without altering spectrum characteristics.

关键词

紫外有机电致发光器件载流子调控激子掺杂

Keywords

ultraviolet organic light-emitting devicecarrier engineeringexcimerdoping

references

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