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1. 大连理工大学 物理与光电工程学院,辽宁 大连,116024
2. 长春理工大学 理学院,吉林 长春,130022
纸质出版日期:2016-2-10,
收稿日期:2015-11-24,
修回日期:2015-12-7,
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张炳烨, 谢洪丽, 方铉等. 原子层沉积AlO<em><sub>x</sub></em>薄膜对单晶硅太阳能电池钝化机制的影响[J]. 发光学报, 2016,37(2): 192-196
ZHANG Bing-ye, XIE Hong-li, FANG Xuan etc. Passivation Mechanism of AlO<em><sub>x</sub></em> Thin Film Fabricated on c-Si by Atomic Layer Deposition[J]. Chinese Journal of Luminescence, 2016,37(2): 192-196
张炳烨, 谢洪丽, 方铉等. 原子层沉积AlO<em><sub>x</sub></em>薄膜对单晶硅太阳能电池钝化机制的影响[J]. 发光学报, 2016,37(2): 192-196 DOI: 10.3788/fgxb20163702.0192.
ZHANG Bing-ye, XIE Hong-li, FANG Xuan etc. Passivation Mechanism of AlO<em><sub>x</sub></em> Thin Film Fabricated on c-Si by Atomic Layer Deposition[J]. Chinese Journal of Luminescence, 2016,37(2): 192-196 DOI: 10.3788/fgxb20163702.0192.
采用原子层沉积设备在p型单晶制绒硅上制备了不同厚度的AlO
x
薄膜。通过研究AlO
x
薄膜厚度对样品的反射率、少数载流子寿命以及电容-电压特性的影响
发现沉积32 nm的AlO
x
薄膜样品具有最好的钝化效果。另外
通过计算Si/AlO
x
界面处的固定电荷密度和缺陷态密度
发现32 nm 厚的AlO
x
薄膜样品具有最低的缺陷态密度。系统研究了单晶硅材料的表面钝化机制
给出了影响样品载流子寿命的根本来源。
AlO
x
thin films with various thicknesses were fabricated on p-type textured crystalline silicon wafers through atomic layer deposition. The optical and electrical properties of AlO
x
thin films were significantly improved by adjusting their thicknesses. The reflectance of AlO
x
thin films decreased from 10.12% to 0.96% with increasing thickness in a wide spectral range from 350 to 1 000 nm. The passivation effect of AlO
x
was discussed by using quasi steady state photo conductance (QSSPC) and capacitance-voltage (
C-V
) measurement. The AlO
x
thin film with the thickness of 32 nm shows the highest
eff
and lowest interfacial state density (
D
it
). The origin of the polarity changing of the equivalent oxide charge (
Q
f
) for the annealed AlO
x
thin film was also investigated.
氧化铝原子层沉积钝化准稳态光电导
AlOxatomic layer deposition(ALD)passivationquasi steady state photo conductance(QSSPC)
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